Browsing by author "Hoffmann, Thomas Y."
Now showing items 21-40 of 161
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Characteristics and integration challenges of FinFET-based devices for (Sub-)22nm technology nodes circuit applications
Veloso, Anabela; Van Dal, Mark; Collaert, Nadine; De Keersgieter, An; Witters, Liesbeth; Rooyackers, Rita; Redolfi, Augusto; Brus, Stephan; Duffy, Ray; Pawlak, Bartek; Vellianitis, Georgios; Duriez, Blandine; Merelle, Thomas; Absil, Philippe; Biesemans, Serge; Jurczak, Gosia; Hoffmann, Thomas Y.; Lander, Rob (2009-10) -
CMOS integration of dual work function phase controlled Ni FUSI with simultaneous integration of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON
Lauwers, Anne; Veloso, Anabela; Hoffmann, Thomas Y.; Van Dal, Mark; Vrancken, Christa; Brus, Stephan; Locorotondo, Sabrina; de Marneffe, Jean-Francois; Sijmus, Bram; Kubicek, Stefan; Chiarella, Thomas; Kmieciak, Malgorzata; Opsomer, Karl; Niwa, Masaaki; Mitsuhashi, Riichirou; Kottantharayil, Anil; Yu, HongYu; Demeurisse, Caroline; Verbeeck, Rita; de Potter de ten Broeck, Muriel; Absil, Philippe; Maex, Karen; Jurczak, Gosia; Biesemans, Serge; Kittl, Jorge (2005-12) -
Conformal doping for FINFET's: a fabrication and metrology challenge
Vandervorst, Wilfried; Everaert, Jean-Luc; Rosseel, Erik; Jurczak, Gosia; Hoffmann, Thomas Y.; Eyben, Pierre; Mody, Jay; Koelling, Sebastian; Gilbert, Matthieu; Pawlak, Bartek; Duffy, R.; Van Dal, Mark (2008) -
Control of laser induced interface traps with in-line corona charge metrology
Everaert, Jean-Luc; Rosseel, Erik; Ortolland, Claude; Aoulaiche, Marc; Hoffmann, Thomas Y.; Pavelka, Tibor; Don, Eric (2008) -
Correlation between the Vth-adjustment of nMOSFETs with HfSiO gate oxide and the energy profile of high-k bulk trap density
Sahhaf, Sahar; Degraeve, Robin; Srividya, Vidya; Kaczer, Ben; Gealy, Dan; Horiguchi, Naoto; Togo, Mitsuhiro; Hoffmann, Thomas Y.; Groeseneken, Guido (2010) -
Cost effective low Vt Ni-FUSI CMOS on SiON by means of Al implant (pMOS) and Yb+P implant (nMOS)
Lauwers, Anne; Veloso, Anabela; Chang, Shou-Zen; Yu, HongYu; Hoffmann, Thomas Y.; Kerner, Christoph; Demand, Marc; Rothschild, Aude; Niwa, Masaaki; Satoru, Ito; Mitshashi, Riichirou; Ameen, Mike; Whittemore, Graham; Pawlak, Malgorzata; Vrancken, Christa; Demeurisse, Caroline; Mertens, Sofie; Vandervorst, Wilfried; Absil, Philippe; Biesemans, Serge; Kittl, Jorge (2008) -
Current status and addressing the challenges of Hf-based gate stack toward 45nm-LSTP application
Niwa, Masaaki; Mitsuhashi, Riichirou; Yamamoto, K.; Hayashi, S.; Harada, Yoshinao; Rothschild, Aude; Hoffmann, Thomas Y.; Kubicek, Stefan; De Gendt, Stefan; Heyns, Marc; Biesemans, Serge; Kubota, M. (2005-10) -
Defect-related excess low-frequency noise in Ge-on-Si pMOSFETs
Simoen, Eddy; Mitard, Jerome; De Jaeger, Brice; Eneman, Geert; Dobbie, A.; Myronov, M.; Leadley, D.R.; Meuris, Marc; Hoffmann, Thomas Y.; Claeys, Cor (2011) -
Demonstration of recessed SiGe S/D and inserted metal gate on HfO2 for high performance pFETs
Verheyen, Peter; Eneman, Geert; Rooyackers, Rita; Loo, Roger; Eeckhout, Lieve; Rondas, Dirk; Leys, Frederik; Snow, Jim; Shamiryan, Denis; Demand, Marc; Hoffmann, Thomas Y.; Goodwin, Michael; Fujimoto, Hiromasa; Ravit, Claire; Lee, Byeong Chan; Caymax, Matty; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005-12) -
Demonstration of scaled 0.099μm² FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology
Veloso, Anabela; Demuynck, Steven; Ercken, Monique; Goethals, Mieke; Locorotondo, Sabrina; Lazzarino, Frederic; Altamirano Sanchez, Efrain; Huffman, Craig; De Keersgieter, An; Brus, Stephan; Demand, Marc; Struyf, Herbert; De Backer, Johan; Hermans, Jan; Delvaux, Christie; Baudemprez, Bart; Vandeweyer, Tom; Van Roey, Frieda; Baerts, Christina; Goossens, Danny; Dekkers, Harold; Ong, Patrick; Heylen, Nancy; Kellens, Kristof; Volders, Henny; Hikavyy, Andriy; Vrancken, Christa; Rakowski, Michal; Verhaegen, Staf; Dusa, Mircea; Romijn, Leon; Pigneret, Charles; van Dijk, Andre; Schreutelkamp, Rob; Cockburn, Andrew; Gravey, Virginie; Meiling, H.; Hultermans, B.; Lok, S.; Shah, K.; Rajagopalan, R.; Gelatos, J.; Richard, Olivier; Bender, Hugo; Vandenberghe, Geert; Beyer, Gerald; Absil, Philippe; Hoffmann, Thomas Y.; Ronse, Kurt; Biesemans, Serge (2009-12) -
Device scaling beyond 22nm
Hoffmann, Thomas Y. (2011) -
Dopant and carrier profiling for 3D-device architectures
Mody, Jay; Kambham, Ajay Kumar; Zschaetzsch, Gerd; Chiarella, Thomas; Collaert, Nadine; Witters, Liesbeth; Eyben, Pierre; Gilbert, Matthieu; Koelling, Sebastian; Schulze, Andreas; Hoffmann, Thomas Y.; Vandervorst, Wilfried (2011) -
Dopant and carrier profiling in FinFET-based devices with sub-nanometer resolution
Mody, Jay; Kambham, Ajay Kumar; Zschaetzsch, Gerd; Schatzer, Philipp; Chiarella, Thomas; Collaert, Nadine; Witters, Liesbeth; Jurczak, Gosia; Horiguchi, Naoto; Gilbert, Matthieu; Eyben, Pierre; Koelling, Sebastian; Schulze, Andreas; Hoffmann, Thomas Y.; Vandervorst, Wilfried (2010) -
Effective metal gate work function modification by ion implantation with W-based gate stack
Li, Zilan; Schram, Tom; Kerner, Christoph; Witters, Thomas; Singanamalla, Raghunath; Pourtois, Geoffrey; Paraschiv, Vasile; Hoffmann, Thomas Y.; Rohr, Erika; Absil, Philippe; De Gendt, Stefan; De Meyer, Kristin (2008) -
Electrical characterization of Ge-pFETs with HfO2/TiN metal gate: review of possible defects impacting the hole mobility
Mitard, Jerome; Vincent, Benjamin; De Jaeger, Brice; Krom, Raymond; Loo, Roger; Eneman, Geert; De Meyer, Kristin; Meuris, Marc; Heyns, Marc; Vandervorst, Wilfried; Caymax, Matty; Hoffmann, Thomas Y. (2010) -
Electrical characterization of Si capped Hf)2/metal gate Ge-pFETs: physical insight into critical parameters
Mitard, Jerome; Vincent, Benjamin; De Jaeger, Brice; Martens, Koen; Krom, Raymond; Loo, Roger; Eneman, Geert; De Meyer, Kristin; Meuris, Marc; Heyns, Marc; Vandervorst, Wilfried; Caymax, Matty; Hoffmann, Thomas Y. (2010) -
Electrical characterization of the MOS (metal-oxide-semiconductor) system: High mobility substrates
Lin, Dennis; Brammertz, Guy; Sioncke, Sonja; Nyns, Laura; Alian, AliReza; Wang, Wei-E; Heyns, Marc; Caymax, Matty; Hoffmann, Thomas Y. (2011) -
Electrical properties of low-VT metal-gated n-MOSFETs using La2O3/SiOx as interfacial layer between HfLaO high-k dielectrics and Si channel
Chang, Shou-Zen; Yu, Hong-Yu; Adelmann, Christoph; Delabie, Annelies; Wang, Xin Peng; Van Elshocht, Sven; Akheyar, Amal; Nyns, Laura; Swerts, Johan; Aoulaiche, Marc; Kerner, Christoph; Absil, Philippe; Hoffmann, Thomas Y.; Biesemans, Serge (2008-05) -
Electrical quality of III-V/oxide interfaces: good enough for MOSFET devices?
Brammertz, Guy; Alian, AliReza; Lin, Dennis; Nyns, Laura; Sioncke, Sonja; Merckling, Clement; Wang, Wei-E; Caymax, Matty; Hoffmann, Thomas Y. (2011) -
Electrical TCAD simulation of a germanium pMOSFET technology
Hellings, Geert; Eneman, Geert; Krom, Raymond; De Jaeger, Brice; Mitard, Jerome; De Keersgieter, An; Hoffmann, Thomas Y.; Meuris, Marc; De Meyer, Kristin (2010)