Browsing by author "Trojman, Lionel"
Now showing items 1-20 of 35
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A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination
Trojman, Lionel; Acurio, Eliana; De Jaeger, Brice; Posthuma, Niels; Decoutere, Stefaan; Bakeroot, Benoit (2023) -
A defect-centric perspective on channel hot carrier variability in nMOSFETs
Procel, Luis Miguel; Crupi, Felice; Franco, Jacopo; Trojman, Lionel; Kaczer, Ben; Wils, N.; Tuinhout, H. (2015) -
Advanced electrical characterization toward (sub) 1nm EOT HfSiON – hole trapping in PFET and L-dependent effects
Zahid, Mohammed; Pantisano, Luigi; Degraeve, Robin; Aoulaiche, Marc; Trojman, Lionel; Ferain, Isabelle; San Andres Serrano, Enrique; Groeseneken, Guido; Zhang, J.F.; Heyns, Marc; Jurczak, Gosia; De Gendt, Stefan (2007) -
Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility
Lujan, Guilherme; Magnus, Wim; Soree, Bart; Ragnarsson, Lars-Ake; Trojman, Lionel; Kubicek, Stefan; De Gendt, Stefan; Heyns, Marc; De Meyer, Kristin (2005-06) -
Charge carrier mobility for advanced high-k/metal gate MOSFET in CMOS technology. An experimental study
Trojman, Lionel (2009-11) -
Defect-centric distribution of channel hot carrier degradation in nano-MOSFETs
Procel, Luis Miguel; Crupi, Felice; Franco, Jacopo; Trojman, Lionel; Kaczer, Ben (2014) -
Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices
Trojman, Lionel; Ragnarsson, Lars-Ake; Pantisano, Luigi; Lujan, Guilherme; Houssa, Michel; Schram, Tom; Schaekers, Marc; Van Ammel, Annemie; Groeseneken, Guido; De Gendt, Stefan; Heyns, Marc (2005-06) -
Effectiveness of nitridation of hafnium silicate dielectrics: a comparison between thermal and plasma nitridation
O'Sullivan, Barry; Kaushik, Vidya; Everaert, Jean-Luc; Trojman, Lionel; Ragnarsson, Lars-Ake; Pantisano, Luigi; Rohr, Erika; De Gendt, Stefan; Heyns, Marc (2007) -
Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories
Procel, Luis Miguel; Trojman, Lionel; Moreno, J.; Crupi, Felice; Maccaronio, V.; Degraeve, Robin; Goux, Ludovic; Simoen, Eddy (2013) -
Fundamentals and extraction of velocity saturation in sub-100nm (110)-Si and (100)-Ge
Pantisano, Luigi; Trojman, Lionel; Mitard, Jerome; De Jaeger, Brice; Severi, Simone; Eneman, Geert; Crupi, G.; Hoffmann, Thomas Y.; Ferain, Isabelle; Meuris, Marc; Heyns, Marc (2008) -
High Performing 8 Å EOT HfO2 / TaN Low Thermal-Budget n-channel FETs with Solid-Phase Epitaxially Regrown (SPER) Junctions
Ragnarsson, Lars-Ake; Severi, Simone; Trojman, Lionel; Brunco, David; Johnson, Kevin D.; Delabie, Annelies; Schram, Tom; Tsai, Wilman; Groeseneken, Guido; De Meyer, Kristin; De Gendt, Stefan; Heyns, Marc (2005) -
High-field transport investigation for 25-nm MOSFETs with 0.64nm EOT: intrinsic performance and parasitic effects
Trojman, Lionel; Pantisano, Luigi; Ragnarsson, Lars-Ake (2012) -
High-k characterization by RFCV
San Andres Serrano, Enrique; Pantisano, Luigi; Roussel, Philippe; Toledano Luque, Maria; Trojman, Lionel; Severi, Simone; De Gendt, Stefan; Groeseneken, Guido (2007) -
High-k metal gate MOSFETs: Impact of extrinsic process condition on the gate-stack quality. A mobility study
Trojman, Lionel; Ragnarsson, Lars-Ake; O'Sullivan, Barry; Rosmeulen, Maarten; Kaushik, Vidya; Groeseneken, Guido; Maes, Herman; De Gendt, Stefan; Heyns, Marc (2007-03) -
Influence of GaN- and Si3N4- passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
Acurio Mendez, Eliana; Crupi, Felice; De Jaeger, Brice; Ronchi, Nicolo; Bakeroot, Benoit; Decoutere, Stefaan; Trojman, Lionel (2019) -
Line width dependent mobility in high-k – a comparative performance study between FUSI and TiN
Pantisano, Luigi; Trojman, Lionel; Severi, Simone; San Andres Serrano, Enrique; Kerner, Christoph; Veloso, Anabela; Ferain, Isabelle; Hoffmann, Thomas Y.; Groeseneken, Guido; De Gendt, Stefan (2007) -
Mobility and dielectric quality of 1-nm EOT HfSiON on Si(110) and (100)
Trojman, Lionel; Pantisano, Luigi; Ferain, Isabelle; Severi, Simone; Maes, Herman; Groeseneken, Guido (2008) -
Mobility extraction using RFCV for 80nm MOSFET with 1nm EOT HfSiON/TiN
San Andres Serrano, Enrique; Pantisano, Luigi; Severi, Simone; Trojman, Lionel; Ferain, Isabelle; Toledano-Luque, M.; Jurczak, Gosia; Groeseneken, Guido; De Gendt, Stefan; Heyns, Marc (2007) -
Mobility improvement study for 8-Å-EOT HfO2 UTBB-FD-SOI-MOSFET based on the direct extraction of the back channel mobility
Trojman, Lionel; Ragnarsson, Lars-Ake; Collaert, Nadine (2014-11) -
Nitrogen incorporation in HfSiO(N)/TaN gate stacks: impact on performances and NBTI
Aoulaiche, Marc; Houssa, Michel; Deweerd, Wim; Trojman, Lionel; Conard, Thierry; Maes, Jan; De Gendt, Stefan; Groeseneken, Guido; Heyns, Marc (2007)