Browsing by author "Vantomme, Andre"
Now showing items 1-20 of 180
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A study of growth mechanism of TiN and WCN barrier films deposited by atomic layer deposition on different substrates
Satta, Alessandra; Schuhmacher, Jörg; Whelan, Caroline; Vandervorst, Wilfried; Brongersma, Sywert; Beyer, Gerald; Brijs, Bert; Conard, Thierry; Maex, Karen; Vantomme, Andre; Viitanen, M.M.; Brongersma, H.H. (2002) -
Advanced characterization of high-K materials: a nuclear approach
Brijs, Bert; Huyghebaert, Cedric; Nauwelaerts, Sophie; Caymax, Matty; Vandervorst, Wilfried; Nakajima, K.; Kimura, K.; Bergmaier, A.; Dollinger, G.; Lennard, W. N.; Terwagne, G.; Vantomme, Andre (2002) -
ALD on high mobility channels: engineering the proper gate stack passivation
Sioncke, Sonja; Lin, Hang Chun; Adelmann, Christoph; Brammertz, Guy; Delabie, Annelies; Conard, Thierry; Franquet, Alexis; Caymax, Matty; Meuris, Marc; Struyf, Herbert; De Gendt, Stefan; Heyns, Marc; Fleischmann, Claudia; Temst, K.; Vantomme, Andre; Muller, Matthias; Kolbe, Michael; Beckhoff, Burkhard; Schmeisser, Dieter; Tallarida, Massimo (2010) -
ALD on high mobility channels: engineering the proper gate stack passivation
Sioncke, Sonja; Lin, Dennis; Brammertz, Guy; Delabie, Annelies; Conard, Thierry; Caymax, Matty; Meuris, Marc; Struyf, Herbert; De Gendt, Stefan; Heyns, Marc; Fleischmann, Claudia; Temst, Kristiaan; Vantomme, Andre; Beckhoff, Burkhard (2010) -
ARIBA: a combined analysis set-up for high resolution RBS and TOF-ERDA for thin film analysis
Sajavaara, Timo; Brijs, Bert; Giangrandi, Simone; Arstila, Kai; Vantomme, Andre; Vandervorst, Wilfried (2004) -
Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Takeuchi, S.; Shimura, Y.; Nishimura, T.; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, J.; Temst, K.; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, O.; Sakai, A.; Zaima, S. (2010) -
Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, Tsuyoshi; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Temst, Kristiaan; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Sakai, A.; Zaima, Shigeaki (2010-10) -
Atomic layer deposition of high-k dielectrics on sulphur-passivated germanium
Sioncke, Sonja; Lin, Dennis; Nyns, Laura; Brammertz, Guy; Delabie, Annelies; Conard, Thierry; Franquet, Alexis; Meuris, Marc; Struyf, Herbert; De Gendt, Stefan; Heyns, Marc; Fleischmann, Claudia; Temst, Kristiaan; Vantomme, Andre; Muller, Matthias; Kobe, Michael; Beckhoff, Burkhard; Caymax, Matty (2011) -
Backscattering/channeling study of high dose rare-earth implants in Si
Vantomme, Andre; Wu, Ming Fang; Wahl, U.; Pattyn, Hugo; Bender, Hugo; Langouche, G. (1997) -
Backscattering/channeling study of high-dose rare-earth implants into Si
Vantomme, Andre; Wahl, U.; Wu, Ming Fang; Hogg, S.; Pattyn, Hugo; Langouche, G.; Bender, Hugo (1998) -
Bandgap measurement by spectroscopic ellipsometry for strained Ge 1-x Sn x
Shimura, Yosuke; Wang, Wei; Nieddu, Thomas; Gencarelli, Federica; Vincent, Benjamin; Laha, Priya; Terryn, Herman; Stefanov, Stefan; Chiussi, Stefano; Van Campenhout, Joris; Nguyen, Ngoc Duy; Vantomme, Andre; Loo, Roger (2013-06) -
Calibration of PIXE yields using binary thin films on Si
Meersschaut, Johan; Carbonel, Jacob; Popovici, Mihaela Ioana; Zhao, Qiang; Vantomme, Andre; Vandervorst, Wilfried (2014) -
Calibration of PIXE yields using binary thin films on Si
Meersschaut, Johan; Carbonel, Jacob; Lenka, Hara; Zhao, Qiang; Vantomme, Andre; Vandervorst, Wilfried (2013) -
Calibration of PIXE yields using Cu as a reference
Harayama, Isao; Sekiba, Daichiro; Zhao, Qiang; Vantomme, Andre; Vandervorst, Wilfried; Meersschaut, Johan (2017) -
Channeled ion beam synthesis: a new technique to form epitaxial rare-earth silicides with high quality
Wu, Ming Fang; Vantomme, Andre; Pattyn, Hugo; Langouche, H.; Bender, Hugo (1996) -
Channeled ion beam synthesis: a new technique to form high-quality rare-earth silicides
Vantomme, Andre; Wu, Ming Fang; Wahl, U.; De Wachter, J.; Degroote, S.; Pattyn, Hugo; Langouche, H.; Bender, Hugo (1996) -
Channeled ion beam synthesis: a new technique to form high-quality rare-earth silicides
Vantomme, Andre; Wu, Ming Fang; Wahl, U.; Pattyn, Hugo; Langouche, H.; Bender, Hugo (1996) -
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Vincent, Benjamin; Shimura, Y.; Takeuchi, Shotaro; Nishimura, T.; Eneman, Geert; Firrincieli, Andrea; Demeulemeester, Jelle; Vantomme, Andre; Clarysse, Trudo; Nakatsuka, O.; Zaima, S.; Dekoster, Johan; Caymax, Matty; Loo, Roger (2011) -
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Vincent, Benjamin; Shimura, Y.; Takeuchi, S.; Nishimura, T.; Demeulemeester, J.; Eneman, Geert; Clarysse, Trudo; Vantomme, Andre; Nakatsuka, O.; Zaima, S.; Dekoster, Johan; Caymax, Matty; Loo, Roger (2010) -
Characterization of the growth of atomic layer deposited WNxCy films on various substrates
Martin Hoyas, Ana; Travaly, Youssef; Schuhmacher, Jorg; Sajavaara, Timo; Whelan, Caroline; Eyckens, Brenda; Richard, Olivier; Giangrandi,; Brijs, Bert; Jonas, A.M.; Vantomme, Andre; Vandervorst, Wilfried; Celis, Jean-Pierre; Maex, Karen (2005)