Browsing by author "Benedetti, Alessandro"
Now showing items 1-20 of 26
-
A finite element study of process induced stress in the transistor channel: effects of silicide contact and gate stack
Torregiani, Cristina; Liu, Joy; Vandevelde, Bart; Degryse, Dominiek; Van Dal, Mark; Benedetti, Alessandro; Lauwers, Anne; Maex, Karen (2004) -
Analysis of depth-inhomogeneous strains in deep sub-micron silicon devices by TEM/CBED
Spessot, A.; Armigliato, A.; Balboni, R.; Frabboni, S.; Benedetti, Alessandro (2005) -
Comparison of electric properties of ultra-thin thermal and plasma nitrided silicon oxides with different post-deposition treatments using C-AFM
Polspoel, Wouter; Vandervorst, Wilfried; Petry, Jasmine; Conard, Thierry; Benedetti, Alessandro (2005) -
Corrosion of FIBed Cu
Bender, Hugo; Richard, Olivier; Benedetti, Alessandro; Van Marcke, Patricia; Drijbooms, Chris (2005) -
Defect removal, dopant diffusion and activation issues in ion-implanted shallow junctions fabricated in crystalline germanium substrates
Simoen, Eddy; Satta, Alessandra; Meuris, Marc; Janssens, Tom; Clarysse, Trudo; Benedetti, Alessandro; Demeurisse, Caroline; Brijs, Bert; Hoflijk, Ilse; Vandervorst, Wilfried; Claeys, Cor (2005) -
Diffusion, activation and recrystallization of boron implanted in preamorphized and crystalline germanium
Satta, Alessandra; Simoen, Eddy; Clarysse, Trudo; Janssens, Tom; Benedetti, Alessandro; De Jaeger, Brice; Meuris, Marc; Vandervorst, Wilfried (2005) -
Effect of amorphization on activation and deactivation of boron in source/drain, channel and poly gate
Pawlak, Bartek; Duffy, Ray; Janssens, Tom; Vandervorst, Wilfried; Severi, Simone; Richard, Olivier; Benedetti, Alessandro; Eyben, Pierre; Colombeau, B.; Cowern, N.E.B.; Camillo-Castillo, R.A.; Jones, K.S.; Aboy, M. (2005) -
FEG-TEM analysis of the effects of Ge segregation and germane flux on the Ge profile across nm-scale SiGe layers, grown by both MBE and CVD
Benedetti, Alessandro; Norris, D.J.; Hetherington, C.J.D.; Cullis, A.G.; Robbins, D.J.; Wallis, D.J. (2003) -
Focused ion beam sample preparation: applications in materials science
Bender, Hugo; Benedetti, Alessandro; Richard, Olivier; Van Marcke, Patricia; Drijbooms, Chris (2003) -
Germanium content dependence of the leakage current of recessed SiGe source/drain junctions
Simoen, Eddy; Bargallo Gonzalez, Mireia; Eneman, Geert; Verheyen, Peter; Benedetti, Alessandro; Bender, Hugo; Loo, Roger; Claeys, Cor (2007) -
Impact of Ni-silicide grain orientation on the strain and stress fields induced in patterned silicon
Torregiani, Cristina; Maex, Karen; Benedetti, Alessandro; Bender, Hugo; Van Houtte, P.; Pawlak, Bartek; Kittl, Jorge (2007) -
In-situ plucker system for preparation of TEM samples by FIB: new applications, future prospects and challenges
Benedetti, Alessandro; Bender, Hugo (2003) -
Ion implantation in Ge and associated defect control
Satta, Alessandra; Simoen, Eddy; Janssens, Tom; Benedetti, Alessandro; Clarysse, Trudo; De Jaeger, Brice; Geenen, Luc; Brijs, Bert; Meuris, Marc; Vandervorst, Wilfried (2005-09) -
Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge
Yu, HongYu; Chen, J.D.; Li, M.F.; Lee, S.J.; Kwong, D.L.; van Dal, Marc; Kittl, Jorge; Lauwers, Anne; Augendre, Emmanuel; Kubicek, Stefan; Zhao, Chao; Bender, Hugo; Brijs, Bert; Geenen, Luc; Benedetti, Alessandro; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005) -
Nanometer scale characterisation of CoSi2 and NiSi induced strain in silicon by convergent beam electron diffraction
Benedetti, Alessandro; Bender, Hugo; Torregiani, Cristina; Van Dal, Mark; Maex, Karen (2004) -
On the asymmetric splitting of CBED HOLZ lines under the gate of recessed SiGe source/drain transistors
Benedetti, Alessandro; Bender, Hugo (2007) -
On the splitting of high order Laue zone lines in CBED analysis of stress in silicon
Benedetti, Alessandro; Bender, Hugo; Torregiani, Cristina (2007) -
P implantation on doping of Ge: diffusion, activation, re-crystallization
Satta, Alessandra; Janssens, Tom; Clarysse, Trudo; Simoen, Eddy; Meuris, Marc; Benedetti, Alessandro; Hoflijk, Ilse; De Jaeger, Brice; Demeurisse, Caroline; Vandervorst, Wilfried (2005) -
(Selective) epitaxial growth of strained Si to fabricate low cost and high performance CMOS devices
Loo, Roger; Delhougne, Romain; Meunier-Beillard, Philippe; Caymax, Matty; Verheyen, Peter; Eneman, Geert; De Wolf, Ingrid; Janssens, Tom; Benedetti, Alessandro; De Meyer, Kristin; Vandervorst, Wilfried; Heyns, Marc (2004) -
Silicides for advanced CMOS devices
Lauwers, Anne; Kittl, Jorge; Van Dal, Mark; Chamirian, Oxana; Kmieciak, Malgorzata; Torregiani, Cristina; Liu, J.; Benedetti, Alessandro; Richard, Olivier; Bender, Hugo; van Berkum, J.G.M.; Kaiser, M.; Veloso, Anabela; Kottantharayil, Anil; de Potter de ten Broeck, Muriel; Maex, Karen (2005)