Browsing by author "Tsai, Wilman"
Now showing items 1-20 of 45
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Advanced surface preparation leading into the nano-era
Onsia, Bart; De Gendt, Stefan; Delabie, Annelies; Van Elshocht, Sven; Caymax, Matty; Conard, Thierry; Heyns, Marc; Lin, S.; Green, Martin; Tsai, Wilman (2003) -
ALD HfO2 surface preparation study
Delabie, Annelies; Caymax, Matty; Maes, Jan; Bajolet, Philippe; Brijs, Bert; Cartier, Eduard; Conard, Thierry; De Gendt, Stefan; Richard, Olivier; Vandervorst, Wilfried; Zhao, Chao; Green, Martin; Tsai, Wilman; Heyns, Marc (2003) -
Alternative gate insulator materials for future generation MOSFETs
Heyns, Marc; Bender, Hugo; Carter, Richard; Caymax, Matty; Conard, Thierry; De Gendt, Stefan; Degraeve, Robin; De Witte, Hilde; Groeseneken, Guido; Haukka, S.; Henson, Kirklen; Houssa, Michel; Kubicek, Stefan; Maes, Jos; Naili, Mohamed; Nohira, Hiroshi; Tsai, Wilman; Tuominen, Marko; Vandervorst, R.; Wilhelm, Rudi; Young, Edward; Zhao, Chao (2001) -
Atomic layer deposition and remote plasma surface preparation for gate stack applications
Delabie, Annelies; Caymax, Matty; Brijs, Bert; Cartier, E.; Geenen, Luc; Vandervorst, Wilfried; Bajolet, Philippe; Maes, Jan; Tsai, Wilman; De Gendt, Stefan; Heyns, Marc (2003) -
Atomic layer deposition of hafnium oxide on Ge and GaAs substrates: precursors and surface preparation
Delabie, Annelies; Brunco, David; Conard, Thierry; Favia, Paola; Bender, Hugo; Franquet, Alexis; Sioncke, Sonja; Vandervorst, Wilfried; Van Elshocht, Sven; Heyns, Marc; Meuris, Marc; Kim, Eunji; McIntyre, Paul C.; Saraswat, Krishna C.; LeBeau, James M.; Cagnon, Joel; Stemmer, Susanne; Tsai, Wilman (2008) -
Atomic layer deposition of hafnium oxide on germanium substrates
Delabie, Annelies; Puurunen, R.; Brijs, Bert; Caymax, Matty; Conard, Thierry; Onsia, Bart; Richard, Olivier; Vandervorst, Wilfried; Zhao, Chao; Heyns, Marc; Meuris, Marc; Viitanan, Minna M.; Brongersma, Hidde H.; De Ridder, M.; Goncharova, L.; Garfunkel, Eric; Gustafsson, Torgny; Tsai, Wilman (2005) -
Characterisation of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
Nohira, Hiroshi; Tsai, Wilman; Besling, Wim; Young, Edward; Pétry, Jasmine; Conard, Thierry; Vandervorst, Wilfried; De Gendt, Stefan; Heyns, Marc; Maes, Jos; Tuominen, Marko (2002) -
Characterization of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
Nohira, Hiroshi; Tsai, Wilman; Besling, Wim; Young, Edward; Pétry, Jasmine; Conard, Thierry; Vandervorst, Wilfried; De Gendt, Stefan; Heyns, Marc; Maes, Jos; Tuominen, Marko (2001) -
Comparison of sub 1 nm TiN/HfO2 with Poly-Si/HfO2 gate stacks u sing scaled chemical oxide interfaces
Tsai, Wilman; Ragnarsson, Lars-Ake; Chen, P.J.; Onsia, Bart; Carter, Richard; Cartier, Eduard; Young, Edward; Green, Martin; Caymax, Matty; De Gendt, Stefan; Heyns, Marc (2003) -
Crystallization behaviour of ZrO2/Al2O3-based high-k gate stacks
Zhao, Chao; Richard, Olivier; Bender, Hugo; Houssa, Michel; Carter, Richard; De Gendt, Stefan; Heyns, Marc; Young, Edward; Tsai, Wilman; Roebben, G.; Van der Biest, O.; Haukka, S. (2001) -
Determination of interface energy band diagram between (100)Si and mixed Al-Hf oxides using internal electron photoemission
Afanas'ev, V.V.; Stesmans, Andre; Tsai, Wilman (2003) -
Effect of Al-content and post deposition annealing on the electrical properties of ultra-thin HfAlxOy layers
Carter, Richard; Tsai, Wilman; Young, Edward; Maes, Jan; Chen, P.J.; Delabie, Annelies; Zhao, Chao; De Gendt, Stefan; Heyns, Marc (2003) -
Effect of postdeposition anneal conditions on defect density of HfO2 layers measured by wet etching
Claes, Martine; De Gendt, Stefan; Witters, Thomas; Kaushik, Vidya; Conard, Thierry; Zhao, Chao; Manabe, Y.; Delabie, Annelies; Röhr, Erika; Chen, Jerry; Tsai, Wilman; Heyns, Marc (2004) -
Electrical characterization of high-k materials prepared by Atomic Layer CVD (ALCVD)
Carter, Richard; Cartier, Eduard; Caymax, Matty; De Gendt, Stefan; Degraeve, Robin; Groeseneken, Guido; Heyns, Marc; Kauerauf, Thomas; Kerber, Andreas; Kubicek, Stefan; Lujan, Guilherme; Pantisano, Luigi; Tsai, Wilman; Young, Edward (2001) -
Fabrication, characterization and analysis of Ge/GeSn heterojunction p-type tunnel transistors
Schulte-Braucks, Christian; Pandey, Rahul; Sajjad, Redwan Noor; Barth, Mike; Ghosh, Ram Krishna; Grisafe, Ben; Sharma, Pankaj; von den Driesch, Nils; Vohra, Anurag; Rayner, Gilbert Bruce; Loo, Roger; Mantl, Siegfried; Buca, Dan; Yeh, C-C.; Wu, Cheng-Hsien; Tsai, Wilman; Antoniadis, Dimitri; Datta, Suman (2017-09) -
Growth and characterization of single and mixed metal oxides by ALCVD on various surfaces for high-k gate stack applications
Caymax, Matty; Brijs, Bert; Carter, Richard; Claes, Martine; Conard, Thierry; De Gendt, Stefan; Delabie, Annelies; Heyns, Marc; Richard, Olivier; Vandervorst, Wilfried; Zhao, Chao; Maes, Jan; Chen, Jerry; Cosnier, Vincent; Green, Martin; Kaushik, Vidya; Kluth, Jon; Tsai, Wilman (2002) -
High k dielectric materials prepared by atomic layer CVD
Heyns, Marc; Bender, Hugo; Carter, Richard; Caymax, Matty; Conard, Thierry; De Gendt, Stefan; Degraeve, Robin; De Witte, Hilde; Groeseneken, Guido; Haukka, S.; Henson, Kirklen; Houssa, Michel; Kubicek, Stefan; Maes, Guido; Naili, Mohamed; Nohira, Hiroshi; Tsai, Wilman; Tuominen, Marko; Vandervorst, Wilfried; Wilhelm, Rudi; Yang, E.; Zhao, Chao (2001) -
High Performing 8 Å EOT HfO2 / TaN Low Thermal-Budget n-channel FETs with Solid-Phase Epitaxially Regrown (SPER) Junctions
Ragnarsson, Lars-Ake; Severi, Simone; Trojman, Lionel; Brunco, David; Johnson, Kevin D.; Delabie, Annelies; Schram, Tom; Tsai, Wilman; Groeseneken, Guido; De Meyer, Kristin; De Gendt, Stefan; Heyns, Marc (2005) -
Implementation of high-k gate dielectrics - a status update
De Gendt, Stefan; Chen, Jerry; Carter, Richard; Cartier, Eduard; Caymax, Matty; Claes, Martine; Conard, Thierry; Delabie, Annelies; Deweerd, Wim; Kaushik, Vidya; Kerber, Andreas; Kubicek, Stefan; Maes, Jan; Niwa, M.; Pantisano, Luigi; Puurunen, Riikka; Ragnarsson, Lars-Ake; Schram, Tom; Shimamoto, Yasuhiro; Tsai, Wilman; Röhr, Erika; Van Elshocht, Sven; Witters, Thomas; Young, Edward; Zhao, Chao; Heyns, Marc (2003) -
Infrared interface analysis of high-k dielectrics deposited by atomic layer chemical vapour deposition
Cosnier, Vincent; Bender, Hugo; Caymax, Matty; Chen, Jian; Conard, Thierry; Nohira, Hiroshi; Richard, Olivier; Tsai, Wilman; Vandervorst, Wilfried; Young, Edward; Zhao, Chao; De Gendt, Stefan; Heyns, Marc; Maes, Jos; Tuominen, Marko; Rochat, N.; Olivier, M.; Chabli, A. (2001)