Browsing by author "Togo, Mitsuhiro"
Now showing items 1-20 of 37
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1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor
Lee, Jae Woo; Cho, Moon Ju; Simoen, Eddy; Ritzenthaler, Romain; Togo, Mitsuhiro; Boccardi, Guillaume; Mitard, Jerome; Ragnarsson, Lars-Ake; Chiarella, Thomas; Veloso, Anabela; Horiguchi, Naoto; Thean, Aaron; Groeseneken, Guido (2013-03) -
Atom probe tomography for 3D-dopant analysis in FinFET devices
Kambham, Ajay Kumar; Zschaetzsch, Gerd; Sasaki, Yuichiro; Togo, Mitsuhiro; Horiguchi, Naoto; Mody, J.; Florakis, Antonios; Gajula, D.R.; Kumar, Arul; Gilbert, Matthieu; Vandervorst, Wilfried (2012) -
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
Redolfi, Augusto; Sleeckx, Erik; Devriendt, Katia; Shamiryan, Denis; Vandeweyer, Tom; Horiguchi, Naoto; Togo, Mitsuhiro; Wouters, Johan M. D.; Jurczak, Gosia; Hoffmann, Thomas Y.; Cockburn, Andrew; Gravey, Virginie; Diehl, D.L. (2011-03) -
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
Redolfi, Augusto; Kubicek, Stefan; Rooyackers, Rita; Kim, Min-Soo; Sleeckx, Erik; Devriendt, Katia; Shamiryan, Denis; Vandeweyer, Tom; Delande, Tinne; Horiguchi, Naoto; Togo, Mitsuhiro; Wouters, Johan M. D.; Jurczak, Gosia; Hoffmann, Thomas Y.; Cockburn, Andrew; Gravey, Virginie; Diehl, D.L. (2012) -
Charge based compact modeling for bulk FinFETs
Cerdeira, Antonio; Estrada, Magali; Ritzenthaler, Romain; Franco, Jacopo; Togo, Mitsuhiro; Claeys, Cor (2012) -
Charge based DC compact modeling of bulk FinFET transistor
Cerdeira, Antonio; Garduno, Ivan; Tinoco, Julio; Ritzenthaler, Romain; Franco, Jacopo; Togo, Mitsuhiro; Chiarella, Thomas; Claeys, Cor (2013) -
Correlation between the Vth-adjustment of nMOSFETs with HfSiO gate oxide and the energy profile of high-k bulk trap density
Sahhaf, Sahar; Degraeve, Robin; Srividya, Vidya; Kaczer, Ben; Gealy, Dan; Horiguchi, Naoto; Togo, Mitsuhiro; Hoffmann, Thomas Y.; Groeseneken, Guido (2010) -
Device architectures and their integration challenges for 1x nm node: FinFETs and high mobility channel
Horiguchi, Naoto; Zschaetzsch, Gerd; Sasaki, Yuichiro; Kambham, Ajay Kumar; Togo, Mitsuhiro; Cho, Moon Ju; Ragnarsson, Lars-Ake; Hellings, Geert; Mitard, Jerome; Franco, Jacopo; Eneman, Geert; Witters, Liesbeth; Waldron, Niamh; Lin, Dennis; Pantisano, Luigi; Collaert, Nadine; Vandervorst, Wilfried; Thean, Aaron (2012-09) -
Electrode process dependent NBTI chracteristics of TiN gate FinFETs
Kim, Jinju; Cho, Moon Ju; Pantisano, Luigi; Chiarella, Thomas; Togo, Mitsuhiro; Horiguchi, Naoto; Groeseneken, Guido; Lee, ByoungHun (2012-04) -
Heated implantation with amorphous carbon CMOS mask for scaled FinFETs
Togo, Mitsuhiro; Sasaki, Yuichiro; Zschaetzsch, Gerd; Boccardi, Guillaume; Ritzenthaler, Romain; Lee, Jae Woo; Khaja, Fareen; Colombeau, Benjamin; Godet, Ludovic; Martin, Patrick; Brus, Stephan; Altamirano Sanchez, Efrain; Mannaert, Geert; Dekkers, Harold; Hellings, Geert; Horiguchi, Naoto; Vandervorst, Wilfried; Thean, Aaron (2013) -
Heated implantation with amorphous carbon CMOS mask for scaled FinFETs
Togo, Mitsuhiro; Sasaki, Yuichiro; Zschaetzsch, Gerd; Boccardi, Guillaume; Ritzenthaler, Romain; Lee, Jae Woo; Khaja, F.; Colombeau, B.; Godet, L.; Martin, P.; Brus, Stephan; Altamirano Sanchez, Efrain; Mannaert, Geert; Dekkers, Harold; Hellings, Geert; Horiguchi, Naoto; Vandervorst, Wilfried; Thean, Aaron (2013) -
High performance n-mos FinFET by damage-free, conformal extension doping
Zschaetzsch, Gerd; Sasaki, Y.; Hayashi, S.; Togo, Mitsuhiro; Chiarella, Thomas; Kambham, Ajay Kumar; Mody, J.; Douhard, Bastien; Horiguchi, Naoto; Mizuno, B.; Ogura, M.; Vandervorst, Wilfried (2011) -
Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs
Franco, Jacopo; Kaczer, Ben; Toledano Luque, Maria; Roussel, Philippe; Mitard, Jerome; Ragnarsson, Lars-Ake; Witters, Liesbeth; Chiarella, Thomas; Togo, Mitsuhiro; Horiguchi, Naoto; Groeseneken, Guido; Bukhori, M.F.; Grasser, T.; Asenov, A. (2012) -
Impact of the substrate orientation on CHC reliability in n-FinFETs – separation of the various contributions
Tallarico, Andrea N.; Cho, Moon Ju; Franco, Jacopo; Ritzenthaler, Romain; Togo, Mitsuhiro; Horiguchi, Naoto; Groeseneken, Guido; Crupi, Felice (2014) -
Impact of through silicon via induced mechanical stress on fully depleted bulk FinFET technology
Guo, Wei; Van der Plas, Geert; Ivankovic, Andrej; Cherman, Vladimir; Eneman, Geert; De Wachter, Bart; Togo, Mitsuhiro; Redolfi, Augusto; Kubicek, Stefan; Civale, Yann; Chiarella, Thomas; Vandevelde, Bart; Croes, Kristof; De Wolf, Ingrid; Debusschere, Ingrid; Mercha, Abdelkarim; Thean, Aaron; Beyer, Gerald; Swinnen, Bart; Beyne, Eric (2012) -
Improved sidewall doping with small implant angle by AsH3 Ion assisted deposition and doping process for scaled NMOS Si bulk FinFETs
Sasaki, Yuichiro; Godet, Ludovic; Chiarella, Thomas; Brunco, David; Rockwell, Tyler; Lee, Jae Woo; Colombeau, Benjamin; Togo, Mitsuhiro; Chew, Soon Aik; Zschaetzsch, Gerd; Noh, Kyung Bong; De Keersgieter, An; Boccardi, Guillaume; Kim, Min-Soo; Hellings, Geert; Martin, Patrick; Vandervorst, Wilfried; Thean, Aaron; Horiguchi, Naoto (2013) -
Ion-implantation-based low-cost Hk/MG process for CMOS low-power application
Ortolland, Claude; Sahhaf, Sahar; Srividya, Vidya; Degraeve, Robin; Saino, Kanta; Kim, Chul-Sung; Gilbert, Matthieu; Kauerauf, Thomas; Cho, Moon Ju; Dehan, Morin; Schram, Tom; Togo, Mitsuhiro; Horiguchi, Naoto; Groeseneken, Guido; Biesemans, Serge; Absil, Philippe; Vandervorst, Wilfried; Gealy, Dan; Hoffmann, Thomas Y. (2010) -
Junction strategies for 1x nm technology node with FINFET and high mobility channel
Horiguchi, Naoto; Zschaetzsch, Gerd; Sasaki, Yuichiro; Kambham, Ajay Kumar; Douhard, Bastien; Togo, Mitsuhiro; Hellings, Geert; Mitard, Jerome; Witters, Liesbeth; Eneman, Geert; Noda, Taiji; Collaert, Nadine; Vandervorst, Wilfried; Thean, Aaron (2012) -
Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs
Romeo, Tommaso; Pantisano, Luigi; Simoen, Eddy; Krom, Raymond; Togo, Mitsuhiro; Horiguchi, Naoto; Mitard, Jerome; Thean, Aaron; Groeseneken, Guido; Claeys, Cor; Crupi, Felice (2012) -
Negative Bias Temperature Instability (NBTI) in p-FinFETs with 45-degree substrate rotation
Cho, Moon Ju; Ritzenthaler, Romain; Krom, Raymond; Higuchi, Yuichi; Kaczer, Ben; Chiarella, Thomas; Boccardi, Guillaume; Togo, Mitsuhiro; Horiguchi, Naoto; Kauerauf, Thomas; Groeseneken, Guido (2013)