Browsing by author "Douhard, Bastien"
Now showing items 1-20 of 101
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200mm CVD grown Si/SiGe resonant interband tunnel diodes optimized for high peak-to-valley current ratios
Ramesh, Anisha; Berger, Paul; Douhard, Bastien; Vandervorst, Wilfried; Loo, Roger (2012-06) -
A low-power HKMG CMOS platform compatible with DRAM node 2x and beyond
Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; Caillat, Christian; Aoulaiche, Marc; Cho, Moon Ju; Noh, Kyung Bong; Son, Yunik; Na, Hoon Jo; Kauerauf, Thomas; Douhard, Bastien; Nazir, Aftab; Chew, Soon Aik; Milenin, Alexey; Altamirano Sanchez, Efrain; Schoofs, Geert; Albert, Johan; Sebaai, Farid; Vecchio, Emma; Paraschiv, Vasile; Vandervorst, Wilfried; Lee, Sun Ghil; Collaert, Nadine; Fazan, Pierre; Horiguchi, Naoto; Thean, Aaron (2014) -
A new method to fabricate Ge nanowires: selective lateral etching of GeSn:P-Ge multi-stacks
Porret, Clément; Vohra, Anurag; Sebaai, Farid; Douhard, Bastien; Hikavyy, Andriy; Loo, Roger (2018) -
Advanced dielectrics targeting 2X DRAM MIM capacitors
Popovici, Mihaela Ioana; Swerts, Johan; Aoulaiche, Marc; Redolfi, Augusto; Kaczer, Ben; Kim, Min-Soo; Douhard, Bastien; Delabie, Annelies; Clima, Sergiu; Jurczak, Gosia; Van Elshocht, Sven (2013) -
Advances in metrology for complex epitaxial systems embedded in small volums
Vandervorst, Wilfried; Kumar, Arul; Meersschaut, Johan; Franquet, Alexis; Douhard, Bastien; Delmotte, Joris; Conard, Thierry; Nuytten, Thomas; Hantschel, Thomas; Loo, Roger (2015-05) -
An InGaAs/InP quantum well FinFET using the replacement fin process integrated in an RMG flow on 300mm Si substrates
Waldron, Niamh; Merckling, Clement; Guo, Weiming; Ong, Patrick; Teugels, Lieve; Ansar, Sheikh; Tsvetanova, Diana; Sebaai, Farid; van Dorp, Dennis; Milenin, Alexey; Lin, Dennis; Nyns, Laura; Mitard, Jerome; Pourghaderi, Mohammad Ali; Douhard, Bastien; Richard, Olivier; Bender, Hugo; Boccardi, Guillaume; Caymax, Matty; Heyns, Marc; Vandervorst, Wilfried; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2014) -
B and Ga co-doping in epitaxial SiGe: challenges and opportunities
Porret, Clément; Rengo, Gianluca; Hikavyy, Andriy; Petersen Barbosa Lima, Lucas; Xie, Qi; Douhard, Bastien; Ayyad, Mustafa; Vantomme, André; Loo, Roger (2020) -
Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments
Vincent, Benjamin; Gencarelli, Federica; Lin, Dennis; Nyns, Laura; Richard, Olivier; Bender, Hugo; Douhard, Bastien; Moussa, Alain; Merckling, Clement; Witters, Liesbeth; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Heyns, Marc (2011) -
Bipolar device fabrication using a scanning tunnelling microscope
Skeren, Tomas; Koester, Sigrun; Douhard, Bastien; Fleischmann, Claudia; Fuhrer, Andreas (2020) -
Boron delta-doping dependence on Si/SiGe resonant interband tunneling diodes grown by chemical vapor deposition
Ramesh, Anisha; Growden, Tyler; Berger, Paul R.; Loo, Roger; Vandervorst, Wilfried; Douhard, Bastien; Caymax, Matty (2012-03) -
Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode
El Kazzi, Salim; Alian, AliReza; Hsu, Brent; Verhulst, Anne; Walke, Amey; Favia, Paola; Douhard, Bastien; del Alamo, Jesus Del Alamo; Lu, Wenjie; Collaert, Nadine; Merckling, Clement (2018) -
Catalyst assisted low temperature pre epitaxial cleaning for Si and SiGe surfaces
Dhayalan, Sathish Kumar; Loo, Roger; Hikavyy, Andriy; Rosseel, Erik; Wostyn, Kurt; Kenis, Karine; Shimura, Yosuke; Profijt, Harald; Maes, Jan; Douhard, Bastien; Vandervorst, Wilfried (2015) -
Cesium/xenon dual beam sputtering in a Cameca instrument
Pureti, Rathaiah; Douhard, Bastien; Delmotte, Joris; Merkulov, Alexandre; Vandervorst, Wilfried (2014) -
Characterization of highly doped Si:P, Si:As and Si:P:As epi layers for source/drain epitaxy
Rosseel, Erik; Tirrito, Matteo; Porret, Clément; Douhard, Bastien; Meersschaut, Johan; Hikavyy, Andriy; Loo, Roger; Horiguchi, Naoto; Pourtois, Geoffrey; Nakazaki, Nobuya; Tolle, John (2019) -
Characterization of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy
Rosseel, Erik; Tirrito, Matteo; Porret, Clément; Douhard, Bastien; Meersschaut, Johan; Hikavyy, Andriy; Loo, Roger; Horiguchi, Naoto; Pourtois, Geoffrey; Nakazaki, Nobuya; Tolle, John (2019-06) -
Comparing n-and p-type polycrystalline silicon absorbers in thin-film solar cells
Deckers, Jan; Bourgeois, Emilie; Jivanescu, M.; Abass, A.; Van Gestel, Dries; Van Nieuwenhuysen, Kris; Douhard, Bastien; D'Haen, Jan; Nesladek, Milos; Manca, Jean; Gordon, Ivan; Bender, Hugo; Stesmans, Andre; Mertens, Robert; Poortmans, Jef (2015) -
Composition analysis of III-V materials grown in nanostructures for semiconductor applications: the self focusing SIMS approach
Franquet, Alexis; Douhard, Bastien; Merckling, Clement; Conard, Thierry; Vandervorst, Wilfried (2015) -
Composition analysis of III-V materials grown in nanostructures: the self-focusing SIMS approach
Franquet, Alexis; Douhard, Bastien; Conard, Thierry; Melkonyan, Davit; Vandervorst, Wilfried (2016) -
Composition measurements of thin films beyond the spatial resolution of SIMS
Franquet, Alexis; Douhard, Bastien; Delmotte, Joris; Merckling, Clement; Conard, Thierry; Vandervorst, Wilfried (2013) -
Comprehensive study of Ga Activation in Si, SiGe and Ge and 5 x 10-10 $Xcm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation
Wang, Linlin; Yu, Hao; Schaekers, Marc; Everaert, Jean-Luc; Franquet, Alexis; Douhard, Bastien; Date, Lucien; del Agua Borniquel, Jose Ignacio; Hollar, Kelly; Khaja, Fareen; Aderhold, Wolfgang; Mayur, Abhilash; Lee, J.Y.; van Meer, Hans; Mocuta, Dan; Horiguchi, Naoto; Collaert, Nadine; De Meyer, Kristin; Jiang, Yu-Long (2017)