Browsing by author "Geypen, Jef"
Now showing items 1-20 of 47
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12-EUV layer Surrounding Gate Transistor (SGT) for vertical 6-T SRAM: 5-nm-class technology for ultra-density logic devices
Kim, Min-Soo; Harada, N.; Kikuchi, Yoshiaki; Boemmels, Juergen; Mitard, Jerome; Huynh Bao, Trong; Matagne, Philippe; Tao, Zheng; Li, Waikin; Devriendt, Katia; Ragnarsson, Lars-Ake; Lorant, Christophe; Sebaai, Farid; Porret, Clément; Rosseel, Erik; Dangol, Anish; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Geypen, Jef; Jourdan, Nicolas; Sepulveda Marquez, Alfonso; Puliyalil, Harinarayanan; Jamieson, Geraldine; van der Veen, Marleen; Teugels, Lieve; El-Mekki, Zaid; Altamirano Sanchez, Efrain; Li, Y.; Nakamura, H.; Mocuta, Dan; Matsuoka, F. (2019) -
Buried Power Rail Metal exploration towards the 1 nm Node
Gupta, Anshul; Radisic, Dunja; Maes, J.W.; Varela Pedreira, Olalla; Soulie, Jean-Philippe; Jourdan, Nicolas; Mertens, Hans; Bandyopadhyay, Sudip; Le, Quoc Toan; Pacco, Antoine; Heylen, Nancy; Vandersmissen, Kevin; Devriendt, Katia; Zhu, C.; Datta, S.; Sebaai, Farid; Wang, S.; Mousa, M.; Lee, J.; Geypen, Jef; De Wachter, Bart; Chehab, Bilal; Salahuddin, Shairfe Muhammad; Murdoch, Gayle; Biesemans, Serge; Tokei, Zsolt; Dentoni Litta, Eugenio; Horiguchi, Naoto (2021) -
Characterization of boron-doped diamond films for application in nanoscale electrical measurements
Hantschel, Thomas; Zimmer, Jerry; Moussa, Alain; Olanterae, Lauri; Clemente, Francesca; Geypen, Jef; Bender, Hugo; Vandervorst, Wilfried (2010) -
Composition variation of In1-xGaxAs epitaxially grown in narrow trenches on Si
Favia, Paola; Richard, Olivier; Geypen, Jef; Waldron, Niamh; Merckling, Clement; Guo, Weiming; Caymax, Matty; Bender, Hugo (2013) -
Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control
Subhechha, Subhali; Rassoul, Nouredine; Belmonte, Attilio; Hody, Hubert; Dekkers, Harold; van Setten, Michiel; Vaisman Chasin, Adrian; Houshmand Sharifi, Shamin; Banerjee, Kaustuv; Puliyalil, Harinarayanan; Kundu, Souvik; Pak, Murat; Tsvetanova, Diana; Bazzazian, Nina; Vandersmissen, Kevin; Batuk, Dmitry; Geypen, Jef; Heijlen, Jeroen; Delhougne, Romain; Kar, Gouri Sankar (2022) -
Dual beam FIB/SEM cross-section imaging of nano-structures
Bender, Hugo; Drijbooms, Chris; Van Marcke, Patricia; Geypen, Jef; Marrant, Koen (2007) -
Effective work function engineering for aggressively scaled planar and FinFET-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Y.; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2012-09) -
Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Yu; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2013) -
Enabling Logic with Backside Connectivity via n-TSVs and its Potential as a Scaling Booster
Veloso, Anabela; Jourdain, Anne; Hiblot, Gaspard; Schleicher, Filip; D'have, Koen; Sebaai, Farid; Radisic, Dunja; Loo, Roger; Hopf, Toby; De Keersgieter, An; Arimura, Hiroaki; Eneman, Geert; Favia, Paola; Geypen, Jef; Arutchelvan, Goutham; Vaisman Chasin, Adrian; Jang, Doyoung; Nyns, Laura; Rosseel, Erik; Hikavyy, Andriy; Mannaert, Geert; Chan, BT; Devriendt, Katia; Demuynck, Steven; Van der Plas, Geert; Ryckaert, Julien; Beyer, Gerald; Dentoni Litta, Eugenio; Beyne, Eric; Horiguchi, Naoto (2021) -
Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
Tomomi, Takayama; Taishi, Ebisudani; Eiichiro, Shiba; Sepulveda Marquez, Alfonso; Blanquart, Timothee; Kimura, Yosuke; Subramanian, Sujith; Baudot, Sylvain; Briggs, Basoene; Gupta, Anshul; Veloso, Anabela; Capogreco, Elena; Mertens, Hans; Meersschaut, Johan; Conard, Thierry; Dara, Praveen; Geypen, Jef; Martinez Alanis, Gerardo Tadeo; Batuk, Dmitry; Demuynck, Steven; Morin, Pierre (2021) -
FEOL patterning challenges in scaled SRAM with vertical Surrounding Gate Transistors (SGT)
Tao, Zheng; Li, Waikin; Kim, Min-Soo; Devriendt, Katia; Lorant, Christophe; Sebaai, Farid; Porret, Clément; Rosseel, Erik; Sepulveda Marquez, Alfonso; Jourdan, Nicolas; Kikuchi, Yoshiaki; Boemmels, Juergen; Mitard, Jerome; Matagne, Philippe; Ragnarsson, Lars-Ake; Dangol, Anish; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Geypen, Jef; Altamirano Sanchez, Efrain; Lee, James; Li, YiSuo; Kanazawa, Kenichi; Harada, Nozomu; Masuoka, Fujio (2019) -
Forksheet FETs for Advanced CMOS Scaling: Forksheet-Nanosheet Co-Integration and Dual Work Function Metal Gates at 17nm N-P Space
Mertens, Hans; Ritzenthaler, Romain; Oniki, Yusuke; Briggs, Basoene; Chan, BT; Hikavyy, Andriy; Hopf, Toby; Mannaert, Geert; Tao, Zheng; Sebaai, Farid; Peter, Antony; Vandersmissen, Kevin; Dupuy, Emmanuel; Rosseel, Erik; Batuk, Dmitry; Geypen, Jef; Martinez Alanis, Gerardo Tadeo; Abigail, Daniel_; Grieten, Eva; D'have, Koen; Mitard, Jerome; Subramanian, Sujith; Ragnarsson, Lars-Ake; Weckx, Pieter; Chehab, Bilal; Hellings, Geert; Ryckaert, Julien; Dentoni Litta, Eugenio; Horiguchi, Naoto (2021) -
Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain Structures
Mertens, Hans; Ritzenthaler, Romain; Oniki, Yusuke; Puttarame Gowda, Pallavi; Mannaert, Geert; Sebaai, Farid; Hikavyy, Andriy; Rosseel, Erik; Dupuy, Emmanuel; Peter, Antony; Vandersmissen, Kevin; Radisic, Dunja; Briggs, Basoene; Batuk, Dmitry; Geypen, Jef; Martinez Alanis, Gerardo Tadeo; Seidel, Felix; Richard, Olivier; Chan, BT; Mitard, Jerome; Dentoni Litta, Eugenio; Horiguchi, Naoto (2022) -
Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
Mertens, Hans; Ritzenthaler, Romain; Hikavyy, Andriy; Kim, Min-Soo; Tao, Zheng; Wostyn, Kurt; Chew, Soon Aik; De Keersgieter, An; Mannaert, Geert; Rosseel, Erik; Schram, Tom; Devriendt, Katia; Tsvetanova, Diana; Dekkers, Harold; Demuynck, Steven; Vaisman Chasin, Adrian; Van Besien, Els; Dangol, Anish; Godny, Stephane; Douhard, Bastien; Bosman, Niels; Richard, Olivier; Geypen, Jef; Bender, Hugo; Barla, Kathy; Mocuta, Dan; Horiguchi, Naoto; Thean, Aaron (2016) -
Gate-all-around NWFETs vs. triple-gate FinFETs: junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS
Veloso, Anabela; Hellings, Geert; Cho, Moon Ju; Simoen, Eddy; Devriendt, Katia; Paraschiv, Vasile; Vecchio, Emma; Tao, Zheng; Versluijs, Janko; Souriau, Laurent; Dekkers, Harold; Brus, Stephan; Geypen, Jef; Lagrain, Pieter; Bender, Hugo; Eneman, Geert; Matagne, Philippe; De Keersgieter, An; Fang, W.; Collaert, Nadine; Thean, Aaron (2015) -
High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric
Mitard, Jerome; De Jaeger, Brice; Eneman, Geert; Dobbie, Andrew; Myronov, M.; Kobayashi, Masaharu; Geypen, Jef; Bender, Hugo; Vincent, Benjamin; Krom, Raymond; Franco, Jacopo; Winderickx, Gillis; Vrancken, Evi; Vanherle, Wendy; Wang, Wei-E; Tseng, Joshua; Loo, Roger; De Meyer, Kristin; Caymax, Matty; Pantisano, Luigi; Leadley, D.R; Meuris, Marc; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2011) -
High hole-mobility 65nm biaxially-strained Ge-pFETs: fabrication, analysis and optimization
Mitard, Jerome; De Jaeger, Brice; Eneman, Geert; Dobbie, Andrew; Myronov, M.; Kobayashi, Masaharu; Geypen, Jef; Bender, Hugo; Vincent, Benjamin; Krom, Raymond; Franco, Jacopo; Winderickx, Gillis; Vrancken, Evi; Vanherle, Wendy; Wang, Wei-E; Tseng, Joshua; Loo, Roger; De Meyer, Kristin; Caymax, Matty; Pantisano, Luigi; Leadley, David; Meuris, Marc; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010) -
Impact of millisecond laser anneal on the thermal stress-induced defect creation in Si1-xGex source/drain junctions
Bargallo Gonzalez, Mireia; Simoen, Eddy; Rosseel, Erik; Verheyen, Peter; Souriau, Laurent; Geypen, Jef; Bender, Hugo; Hoffmann, Thomas Y.; Loo, Roger; Absil, Philippe; Claeys, Cor (2008) -
Impact of sub-melt laser annealing on Si1-xGex source/drain defectivity
Rosseel, Erik; Lu, J.P; Hikavyy, Andriy; Verheyen, Peter; Hoffmann, Thomas Y.; Richard, Olivier; Geypen, Jef; Bender, Hugo; Loo, Roger; Absil, Philippe; Mc Intosh, R.; Felch, S.; Schreutelkamp, Rob (2007) -
Impact of the chemical concentration on the solid-phase epitaxial regrowth of phosphorus implanted preamorphized germanium
Simoen, Eddy; Brugere, Antoine; Satta, Alessandra; Firrincieli, Andrea; Van Daele, Benny; Brijs, Bert; Richard, Olivier; Geypen, Jef; Meuris, Marc; Vandervorst, Wilfried (2009)