Browsing by author "Aymerich, X."
Now showing items 1-20 of 20
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Aging mechanisms in strained Si/high-k based pMOS transistors. Implications in CMOS circuits
Martin-Martinez, J.; Amat, E.; Ayala, N.; Bargallo Gonzalez, Mireia; Verheyen, Peter; Rodriguez, R.; Nafria, M.; Aymerich, X.; Simoen, Eddy (2011) -
An equivalent circuit model for the recovery component of BTI
Martin-Martinez, Javier; Rodriguez, Rosana; Nafria, Montserat; Aymerich, X.; Kaczer, Ben; Groeseneken, Guido (2008-09) -
Breakdown spots on ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM
Blasco, X.; Nafria, M.; Aymerich, X.; Petry, Jasmine; Vandervorst, Wilfried (2005) -
C-AFM Characterization of the dependance of AlHfOx electrical behaviour on post deposition annealing temperature
Blasco, X.; Petry, Jasmine; Nafria, M.; Aymerich, X.; Vandervorst, Wilfried (2003) -
Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain
Amat, E.; Rodriguez, R.; Gonzalez, Mario; Martin-Martinez, J.; Nafria, M.; Aymerich, X.; Machkaoutsan, Vladimir; Bauer, M.; Verheyen, Peter; Simoen, Eddy (2010) -
Channel hot-carrier degradation under static stress in short channel transistors with high-k/metal gate stacks
Amat, E.; Kauerauf, Thomas; Degraeve, Robin; De Keersgieter, An; Rodríguez, R.; Nafría, M.; Aymerich, X.; Groeseneken, Guido (2008) -
Channel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale
Bayerl, A.; Porti, Marc; Martin-Martinez, Javier; Lanza, M.; Rodriguez, Rosanna; Velayudhan, V.; Amat, Esteve; Nafria, Montse; Aymerich, X.; Gonzalez, Mireia B; Simoen, Eddy (2013) -
Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs
Ayala, N.; Martin-Martinez, J.; Rodriguez, R.; Gonzalez, M.B.; Nafria, M.; Aymerich, X.; Simoen, Eddy (2012) -
CHC degradation of strained devices based on SiON and high-k gate dielectric materials
Amat, E.; Rodriguez, R.; Bargallo Gonzalez, Mireia; Martin-Martinez, J.; Nafria, M.; Aymerich, X.; Verheyen, Peter; Simoen, Eddy (2011) -
Circuit design-oriented stochastic piecewise modeling of the postbreakdown gate current in MOSFETs: application to ring oscilators
Martin-Martinez, Javier; Kaczer, Ben; Degraeve, Robin; Roussel, Philippe; Rodriguez, Rosana; Nafria, Monserrat; Aymerich, X.; Dierickx, Bart; Groeseneken, Guido (2012) -
Circuit-design oriented modelling of the recovery BTI component and post-BD gate currents
Martin-Martinez, Javier; Kaczer, Ben; Boix, J.; Ayala, N.; Rodriguez, Rosana; Nafria, Montserrat; Aymerich, X.; Zuber, Paul; Dierickx, Bart; Groeseneken, Guido (2009-02) -
Comparison of SiO2 and HfO2/SiO2 gate stacks electrical behaviour at a nanometre scale
Blasco, Xavier; Nafria, M.; Aymerich, X.; Vandervorst, Wilfried (2005) -
Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors
Polspoel, Wouter; Vandervorst, Wilfried; Aguilera, L.; Porti, M.; Nafria, M.; Aymerich, X. (2009) -
GAFM characterization of the dependence of HfAlOx electrical behavior on post-deposition annealing temperature
Blasco, X.; Petry, Jasmine; Nafria, M.; Aymerich, X.; Richard, Olivier; Vandervorst, Wilfried (2004) -
Nanoscale electrical characterization of HfO2/SiO2/MOS gate stackx with enhanced-CAFM
Nafria, M.; Blasco, X.; Porti, M.; Aguilera, L.; Aymerich, X.; Petry, Jasmine; Vandervorst, Wilfried (2005) -
Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM
Blasco, X.; Nafria, M.; Aymerich, X.; Petry, Jasmine; Vandervorst, Wilfried (2005) -
Probabilistic defect occupancy model for NBTI
Martin-Martinez, Javier; Kaczer, Ben; Toledano Luque, Maria; Rodriguez, Rosana; Nafria, Monserat; Aymerich, X.; Groeseneken, Guido (2011-04) -
Processing dependences of channel hot-carrier degradation on strained-S- p-channel metal-oxide semiconductor field-effect transistors
Amat, E.; Martin-Martinez, J.; Bargallo Gonzalez, Mireia; Rodriguez, R.; Nafria, M.; Aymerich, X.; Verheyen, Peter; Simoen, Eddy (2011) -
Resistive switching-like behaviour of the dielectric breakdown in ultra-thin Hf based gate stacks in mosfets
Crespo-yepes, A.; Martin-Martinez, J.; Rodriguez, R.; Nafria, M.; Aymerich, X.; Rothschild, Aude (2010) -
SPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors
Martin-Martinez, J.; Amat, E.; Gonzalez, Mario; Verheyen, Peter; Rooyackers, Rita; Rodriguez, R.; Nafria, M.; Aymerich, X.; Simoen, Eddy (2010)