Browsing by author "Van Huylenbroeck, Stefaan"
Now showing items 1-20 of 94
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10 and 7 mu m Pitch Thermo-compression Solder Joint, Using A Novel Solder Pillar And Metal Spacer Process
Derakhshandeh, Jaber; Capuz, Giovanni; Cherman, Vladimir; Inoue, Fumihiro; De Preter, Inge; Hou, Lin; Bex, Pieter; Gerets, Carine; Duval, Fabrice; Webers, Tomas; Bertheau, Julien; Van Huylenbroeck, Stefaan; Phommahaxay, Alain; Shafahian, Ehsan; Van der Plas, Geert; Beyne, Eric; Miller, Andy; Beyer, Gerald (2020) -
3D integration challenges for fine pitch back side micro-bumping on ZoneBOND™ wafers
Buisson, Thibault; De Preter, Inge; Suhard, Samuel; Vandersmissen, Kevin; Jaenen, Patrick; Witters, Thomas; Jamieson, Geraldine; Jourdain, Anne; Van Huylenbroeck, Stefaan; La Manna, Antonio; Beyer, Gerald; Beyne, Eric (2012) -
A 0.25μm SiGe BiCMOS technology including integrated RF passive components optimised for low power applications
Van Huylenbroeck, Stefaan; Jenei, Snezana; Carchon, Geert; Piontek, Andreas; Vleugels, Frank; Decoutere, Stefaan (2003) -
A 0.35μm SiGe BiCMOS process featuring a 80 GHz Fmax HBT and integrated high-Q RF passive components
Decoutere, Stefaan; Vleugels, Frank; Kuhn, Rudiger; Loo, Roger; Caymax, Matty; Jenei, Snezana; Croon, Jeroen; Van Huylenbroeck, Stefaan; Da Rold, Martina; Rosseel, Erik; Chevalier, P.; Coppens, P. (2000) -
A 400GHz fMAX fully self-aligned SiGe:C HBT architecture
Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; You, Shuzhen; Winderickx, Gillis; Radisic, Dunja; Lee, Willie; Ong, Patrick; Vandeweyer, Tom; Nguyen, Duy; De Meyer, Kristin; Decoutere, Stefaan (2009-10) -
A general model for MOS transistor matching
Croon, Jeroen; Rosmeulen, Maarten; Van Huylenbroeck, Stefaan; Decoutere, Stefaan (1999) -
A highly reliable 1.4μm pitch via-last TSV module for wafer-to-wafer hybrid bonded 3D-SOC systems
Van Huylenbroeck, Stefaan; De Vos, Joeri; El-Mekki, Zaid; Jamieson, Geraldine; Tutunjyan, Nina; Muga, Karthik; Stucchi, Michele; Miller, Andy; Beyer, Gerald; Beyne, Eric (2019) -
A highly reliable 1×5μm via-last TSV module
Van Huylenbroeck, Stefaan; Li, Yunlong; De Vos, Joeri; Jamieson, Geraldine; Tutunjyan, Nina; Miller, Andy; Beyer, Gerald; Beyne, Eric (2018) -
A novel fully self-aligned SiGe:C HBT architecture featuring a single step epitaxial collector-base process
Donkers, Johan; Kramer, Mark; Van Huylenbroeck, Stefaan; Choi, Li Jen; Meunier-Beillard, Philippe; Boccardi, Guillaume; van Noort, W.; Hurkx, G.A.M.; Vanhoucke, Tony; Sibaja-Hernandez, Arturo; Vleugels, Frank; Winderickx, Gillis; Kunnen, Eddy; Peeters, Stefan; Baute, Debbie; De Vos, Brecht; Vandeweyer, Tom; Loo, Roger; Venegas, Rafael; Pijper, R.; Decoutere, Stefaan; Hijzen, Erwin (2007) -
A novel isolation scheme featuring cavities in the collector for a high-speed 0.13μm SiGe:C BiCMOS technology
Choi, Li Jen; Van Huylenbroeck, Stefaan; Donkers, Johan; van Noort, Wibo; Piontek, Andreas; Sibaja-Hernandez, Arturo; Meunier-Beillard, Philippe; Neuilly, Francois; Kunnen, Eddy; Leray, Philippe; Vleugels, Frank; Venegas, Rafael; Hijzen, Erwin; Decoutere, Stefaan (2007) -
A simple and efficient RF technique for the TSV characterization
Sun, Xiao; Roda Neve, Cesar; Van Huylenbroeck, Stefaan; Van der Plas, Geert; Beyne, Eric (2017) -
Active-lite interposer for 2.5 & 3D integration
Hellings, Geert; Scholz, Mirko; Detalle, Mikael; Velenis, Dimitrios; de Potter de ten Broeck, Muriel; Roda Neve, Cesar; Li, Yunlong; Van Huylenbroeck, Stefaan; Chen, Shih-Hung; Marinissen, Erik Jan; La Manna, Antonio; Van der Plas, Geert; Linten, Dimitri; Beyne, Eric; Thean, Aaron (2015) -
Advanced metallization scheme for 3×50μm via middle TSV and beyond
Van Huylenbroeck, Stefaan; Li, Yunlong; Heylen, Nancy; Croes, Kristof; Beyer, Gerald; Beyne, Eric; Brouri, Mohand; Gopinath, Sanjay; Nalla, Praveen; Thorum, Matthew; Meshram, Prashant; Anjos, Daniela M.; Yu, Jengyi (2015) -
Advanced process modules and architectures for half-terahertz SiGe:C HBTs
Decoutere, Stefaan; Van Huylenbroeck, Stefaan; Heinemann, Bernd; Fox, Alexander; Chevalier, Pascal; Chantre, Alain; Meister, Thomas; Aufinger, Klaus; Schroter, Michael (2009-10) -
Analysis of copper plasticity impact in TSV-middle and backside TSV-last fabrication processes
Guo, Wei; Karmarkar, Aditya; Xu, Xiaopeng; Van der Plas, Geert; Van Huylenbroeck, Stefaan; Gonzalez, Mario; Absil, Philippe; El Sayed, Karim; Beyne, Eric (2015) -
Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy
You, Shuzhen; Decoutere, Stefaan; Nguyen, Duy; Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; Loo, Roger; De Meyer, Kristin (2011) -
Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition
You, Shuzhen; Decoutere, Stefaan; Nguyen, Duy; Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; Loo, Roger; De Meyer, Kristin (2012) -
Comparison of a novel FSA and a QSA SiGe:C architecture for reverse operation
Sibaja-Hernandez, Arturo; Van Huylenbroeck, Stefaan; Venegas, Rafael; Donkers, Johan; Kramer, Mark; Decoutere, Stefaan (2008) -
Continuity and reliability assessment of a scalable 3×50μm and 2×40μm Via-middle TSV module
Van Huylenbroeck, Stefaan; Li, Yunlong; Stucchi, Michele; Bogaerts, Lieve; De Vos, Joeri; Beyer, Gerald; Beyne, Eric; Brouri, Mohand; Nalla, Praveen; Gopinath, Sanjay; Thorum, Matthew; Richardson, Joe; Yu, Jengyi (2016) -
Copper through silicon via induced keep out zone for 10nm node bulk FinFET CMOS technology
Guo, Wei; Moroz, Victor; Van der Plas, Geert; Choi, M.; Redolfi, Augusto; Smith, L.; Eneman, Geert; Van Huylenbroeck, Stefaan; Su, P.D.; Ivankovic, Andrej; De Wachter, Bart; Debusschere, Ingrid; Croes, Kris; De Wolf, Ingrid; Mercha, Abdelkarim; Beyer, Gerald; Swinnen, Bart; Beyne, Eric (2013)