Browsing by author "Vanhaeren, Danielle"

15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process

Mitard, Jerome; Witters, Liesbeth; Loo, Roger; Lee, Seung Hun; Sun, J.W.; Franco, Jacopo; Ragnarsson, Lars-Ake; Brand, A.; Lu, X.; Yoshido, N.; Eneman, Geert; Brunco, David; Vorderwestner, M.; Storck, P.; Milenin, Alexey; Hikavyy, Andriy; Waldron, Niamh; Favia, Paola; Vanhaeren, Danielle; Vanderheyden, Annelies; Richard, Olivier; Mertens, Hans; Arimura, Hiroaki; Sioncke, Sonja; Vrancken, Christa; Bender, Hugo; Eyben, Pierre; Barla, Kathy; Lee, Sun Ghil; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2014)

1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D

Mitard, Jerome; Witters, Liesbeth; Hellings, Geert; Krom, Raymond; Franco, Jacopo; Eneman, Geert; Hikavyy, Andriy; Vincent, Benjamin; Loo, Roger; Favia, Paola; Dekkers, Harold; Altamirano Sanchez, Efrain; Vanderheyden, Annelies; Vanhaeren, Danielle; Eyben, Pierre; Takeoka, Shinji; Yamaguchi, Shinpei; Van Dal, Mark; Wang, Wei-E; Hong, Sug-Hun; Vandervorst, Wilfried; De Meyer, Kristin; Biesemans, Serge; Absil, Philippe; Horiguchi, Naoto; Hoffmann, Thomas Y. (2011)

Accurate carrier profiling of n-type GaAs junctions

Clarysse, Trudo; Brammertz, Guy; Vanhaeren, Danielle; Eyben, Pierre; Goossens, Jozefien; Clemente, Francesca; Meuris, Marc; Vandervorst, Wilfried; Srnanek, Rudolf; Kinder, Rudolf; Sciana, B.; Radziewicz, D.; Li, Zhiqiang (2008)

Accurate electrical activation characterization of CMOS ultra-shallow profiles

Clarysse, Trudo; Dortu, Fabian; Vanhaeren, Danielle; Hoflijk, Ilse; Geenen, Luc; Janssens, Tom; Loo, Roger; Vandervorst, Wilfried; Pawlak, Bartek; Ouzeaud, V.; Defranoux, C.; Faifer, V.N.; Current, M.I. (2004)

Active dopant characterization methodology for Germanium

Clarysse, Trudo; Eyben, Pierre; Janssens, Tom; Hoflijk, Ilse; Vanhaeren, Danielle; Satta, Alessandra; Meuris, Marc; Vandervorst, Wilfried (2005)

Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

Gencarelli, Federica; Shimura, Yosuke; Kumar, Arul; Vincent, Benjamin; Moussa, Alain; Vanhaeren, Danielle; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Caymax, Matty; Loo, Roger; Heyns, Marc (2015)

Application of scanning spreading resistance microscopy (SSRM) for GaN-on-silicon power structures

Kandaswamy, Prem Kumar; Saripalli, Yoga; Van Hove, Marleen; You, Shuzhen; Zhao, Ming; Liang, Hu; Vanhaeren, Danielle; Vanderheyden, Annelies; Schulze, Andreas; Eyben, Pierre; Decoutere, Stefaan; Langer, Robert; Vandervorst, Wilfried (2014)

Bulk properties of MOCVD-deposited HfO2 layers for high-k dielectric applications

Van Elshocht, Sven; Baklanov, Mikhaïl; Brijs, Bert; Carter, R.; Caymax, Matty; Carbonell, Laure; Claes, Martine; Conard, Thierry; Cosnier, Vincent; Date, Lucien; De Gendt, Stefan; Kluth, J.; Pique, Didier; Richard, Olivier; Vanhaeren, Danielle; Vereecke, Guy; Witters, Thomas; Zhao, Chao; Heyns, Marc (2004)

Characterization of electrically active dopant profiles with the spreading resistance probe

Clarysse, Trudo; Vanhaeren, Danielle; Hoflijk, Ilse; Vandervorst, Wilfried (2004)

Characterization of porous structure in ultra-low-k dielectrics by depositing thin conductive cap layers

Iacopi, Francesca; Tokei, Zsolt; Stucchi, Michele; Brongersma, Sywert; Vanhaeren, Danielle; Maex, Karen (2003)

Conversion of a patterned organic resist into a high performance inoriganic hard mask for high resolution pattern transfer

de Marneffe, Jean-Francois; Chan, BT; Spieser, Martin; Vereecke, Guy; Naumov, Sergej; Vanhaeren, Danielle; Knoll, Armin; Wolf, Heiko (2018)

Damage-free contact mode current sensing SPM: benchmarking PFTUNA vs. C-AFM

Celano, Umberto; Chintala, Ravi Chandra; Hoflijk, Ilse; Moussa, Alain; Vanhaeren, Danielle; Mannarino, Manuel; Nazir, Aftab; Eyben, Pierre; Vandervorst, Wilfried (2013)

Evaluation of the junction delineation accuracy and reproducibility with the SSRM technique

Eyben, Pierre; Vanhaeren, Danielle; Janssens, Tom; Hantschel, Thomas; Vandervorst, Wilfried; Adachi, Kanna; Ishimaru, Kazunari (2007)

Ge island evolution during growth, in-situ anneal, and Si capping in an industrial CVD reactor

Loo, Roger; Meunier-Beillard, Philippe; Dentel, D.; Goryll, M.; Vanhaeren, Danielle; Vescan, L.; Bender, Hugo; Caymax, Matty; Vandervorst, Wilfried (2001)

Growth kinetics and relaxation mechanism of very thin epitaxial Si films on (100) germanium

Bonzom, Renaud; Leys, Frederik; Loo, Roger; Richard, Olivier; Vanhaeren, Danielle; Rip, Jens; Van Steenbergen, Jan; De Jaeger, Brice; Bender, Hugo; Vandervorst, Wilfried; Caymax, Matty; Meuris, Marc (2005)

Hafnium oxide films by atomic layer deposition for high-k gate dielectric applications: analysis of the density of nanometer-thin films

Puurunen, Riikka; Delabie, Annelies; Van Elshocht, Sven; Caymax, Matty; Green, Martin; Brijs, Bert; Richard, Olivier; Bender, Hugo; Conard, Thierry; Hoflijk, Ilse; Vandervorst, Wilfried; Hellin, David; Vanhaeren, Danielle; Zhao, Chao; De Gendt, Stefan; Heyns, Marc (2005)