Browsing by author "Tyaginov, Stanislav"

A BSIM-Based Predictive Hot-Carrier Aging Compact Model

Xiang, Yang; Tyaginov, Stanislav; Vandemaele, Michiel; Wu, Zhicheng; Franco, Jacopo; Bury, Erik; Truijen, Brecht; Parvais, Bertrand; Linten, Dimitri; Kaczer, Ben (2021)

A Compact Physics Analytical Model for Hot-Carrier Degradation

Tyaginov, Stanislav; Grill, Alexander; Vandemaele, Michiel; Grasser, Tibor; Hellings, Geert; Makarov, Alexander; Jech, Markus; Linten, Dimitri; Kaczer, Ben (2020)

A physics-aware compact modeling framework for transistor aging in the entire bias space

Wu, Zhicheng; Franco, Jacopo; Roussel, Philippe; Tyaginov, Stanislav; Truijen, Brecht; Vandemaele, Michiel; Hellings, Geert; Collaert, Nadine; Groeseneken, Guido; Linten, Dimitri; Kaczer, Ben (2019)

Ab initio treatment of silicon-hydrogen bond rupture at Si/SiO2 interfaces

Jech, Markus; El-Sayed, Al-Moatasem; Tyaginov, Stanislav; Shluger, Alexander L; Grasser, Tibor (2019)

Analysis of the features of hot-carrier degradation in FinFETs

Makarov, Alexander; Tyaginov, Stanislav; Kaczer, Ben; Jech, Markus; Vaisman Chasin, Adrian; Grill, Alexander; Hellings, Geert; Vexler, Mikhail; Linten, Dimitri; Grasser, Tibor (2018-10)

Bi-modal variability of nFinFET characteristics during hot-carrier stress: a modeling approach

Makarov, Alexander; Kaczer, Ben; Vaisman Chasin, Adrian; Vandemaele, Michiel; Grill, Alexander; Hellings, Geert; El-Sayed, Al-Moatasem; Grasser, Tibor; Linten, Dimitri; Tyaginov, Stanislav (2019)

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery

Bastos, Joao; O'Sullivan, Barry; Franco, Jacopo; Tyaginov, Stanislav; Truijen, Brecht; Vaisman Chasin, Adrian; Degraeve, Robin; Kaczer, Ben; Ritzenthaler, Romain; Capogreco, Elena; Dentoni Litta, Eugenio; Spessot, Alessio; Higashi, Yusuke; Yoon, Younggwang; Machkaoutsan, Vladimir; Fazan, Pierre; Horiguchi, Naoto (2022)

Border trap based modeling of SiC transistor transfer characteristics

Tyaginov, Stanislav; Jech, Markus; Rzepa, Gerhard; Grill, Alexander; El-Sayed, Al-Moatasem; Pobegen, Gregor; Makarov, Alexander; Grasser, Tibor (2018)

Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range

Tyaginov, Stanislav; Bury, Erik; Grill, Alexander; Yu, Zhuoqing; Makarov, Alexander; De Keersgieter, An; Vexler, Mikhail; Vandemaele, Michiel; Wang, Runsheng; Spessot, Alessio; Vaisman Chasin, Adrian; Kaczer, Ben (2023)

Correlated time-0 and hot-carrier stress induced FinFET parameter variabilities: modeling approach

Makarov, Alexander; Roussel, Philippe; Bury, Erik; Vandemaele, Michiel; Spessot, Alessio; Linten, Dimitri; Kaczer, Ben; Tyaginov, Stanislav (2020)

Distribution function based simulations of hot-carrier degradation in nanowire FETs

Vandemaele, Michiel; Kaczer, Ben; Stanojevic, Zlatan; Tyaginov, Stanislav; Makarov, Alexander; Vaisman Chasin, Adrian; Mertens, Hans; Linten, Dimitri; Groeseneken, Guido (2018)

Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs

Panarella, Luca; Kaczer, Ben; Smets, Quentin; Tyaginov, Stanislav; Saraza Canflanca, Pablo; Vici, Andrea; Verreck, Devin; Schram, Tom; Lin, Dennis; Knobloch, Theresia; Grasser, Tibor; Lockhart de la Rosa, Cesar Javier; Kar, Gouri Sankar; Afanasiev, Valeri (2024)