Browsing by author "Zhao, Chao"
Now showing items 21-40 of 123
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Characterization of ALCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties
Besling, Wim; Young, Edward; Conard, Thierry; Zhao, Chao; Vandervorst, Wilfried; Caymax, Matty; De Gendt, Stefan; Heyns, Marc; Maes, Jos; Tuominen, Marko; Haukka, S. (2001) -
Characterization of nano-laminate structure using grazing incidence XRD and ATR-FTIR
Zhao, Chao; De Gendt, Stefan; Caymax, Matty; Heyns, Marc; Cosnier, Vincent; Maes, Jan; Roebben, G.; Van der Biest, O. (2003) -
Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal
Zhou, Longda; Wang, Guilei; Yin, Xiaogen; Ji, Zhigang; Liu, Qianqian; Xu, Hao; Yang, Hong; Simoen, Eddy; Wang, Xiaolei; Ma, Xueli; Li, Yongliang; Kong, Zhenzhen; Jiang, Haojie; Luo, Ying; Yin, Huaxiang; Zhao, Chao; Wang, Wenwu (2020) -
Crystallisation and tetragonal-monoclinic transformation in ZrO2 and HfO2 dielectric thin films
Zhao, Chao; Roebben, G.; Heyns, Marc; Van Der Biest, O. (2002) -
Crystallization and tetragonal-monoclinic transformation in ZrO2 and HfO2 dielectric thin films
Zhao, Chao; Roebben, G.; Heyns, Marc; Van der Biest, O. (2001) -
Crystallization behaviour of ZrO2/Al2O3-based high-k gate stacks
Zhao, Chao; Richard, Olivier; Bender, Hugo; Houssa, Michel; Carter, Richard; De Gendt, Stefan; Heyns, Marc; Young, Edward; Tsai, Wilman; Roebben, G.; Van der Biest, O.; Haukka, S. (2001) -
Cu contact technology for sub-100nm contacts
Demuynck, Steven; Zhao, Chao; Hinomura, Toru; Tokei, Zsolt; Van den Bosch, Geert; Beyer, Gerald (2007) -
Defect engineering for shallow n-type junctions in germanium: facts and fiction
Simoen, Eddy; Schaekers, Marc; Liu, Jinbiao; Luo, Jun; Zhao, Chao; Barla, Kathy; Collaert, Nadine (2016) -
Demonstration of Ni fully GermanoSilicide as a pFET gate electrode candidate on HfSiON
Yu, HongYu; Singanamalla, Raghunath; Opsomer, Karl; Augendre, Emmanuel; Simoen, Eddy; Kittl, Jorge; Kubicek, Stefan; Severi, Simone; Shi, Xiaoping; Brus, Stephan; Zhao, Chao; de Marneffe, Jean-Francois; Locorotondo, Sabrina; Shamiryan, Denis; Van Dal, Mark; Veloso, Anabela; Lauwers, Anne; Niwa, Masaaki; Maex, Karen; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005) -
Deposition of HfO2 on germanium and the impact of surface pretreatments
Van Elshocht, Sven; Brijs, Bert; Caymax, Matty; Conard, Thierry; Chiarella, Thomas; De Gendt, Stefan; De Jaeger, Brice; Kubicek, Stefan; Meuris, Marc; Onsia, Bart; Richard, Olivier; Teerlinck, Ivo; Van Steenbergen, Jan; Zhao, Chao; Heyns, Marc (2004) -
Deposition of Poly-SiGe with RTCVD
Shi, Xiaoping; Schaekers, Marc; Brus, Stephan; Zhao, Chao; Brijs, Bert; Yu, HongYu; Kottantharayil, Anil (2005-10) -
Determination of metallic contaminants on Ge wafers using direct- and droplet sandwich etch- total reflection X-ray fluorescence spectrometry
Hellin, David; Bearda, Twan; Zhao, Chao; Raskin, G.; Mertens, Paul; De Gendt, Stefan; Heyns, Marc; Vinckier, Chris (2003-12) -
Development of a DRAM compatible Cu contact using self-aligned Ta-silicide and Ta-barrier
Zhao, Chao; Demuynck, Steven; Tokei, Zsolt; Horiguchi, Naoto; Ahn, J.Y. (2008) -
Distinction between silicon and oxide traps using single-trap spectroscopy
Fang, Wen; Simoen, Eddy; Aoulaiche, Marc; Luo, Jun; Zhao, Chao; Claeys, Cor (2014) -
DyScHfO as high-k gate dielectric: structural and electrical properties
Adelmann, Christoph; Van Elshocht, Sven; Lehnen, Peer; Conard, Thierry; Franquet, Alexis; Zhao, Chao; Ragnarsson, Lars-Ake; Chang, Vincent S.; Cho, Hag-Ju; Yu, HongYu; De Gendt, Stefan (2007) -
Effect of Al-content and post deposition annealing on the electrical properties of ultra-thin HfAlxOy layers
Carter, Richard; Tsai, Wilman; Young, Edward; Maes, Jan; Chen, P.J.; Delabie, Annelies; Zhao, Chao; De Gendt, Stefan; Heyns, Marc (2003) -
Effect of O-2 post-deposition anneals on the properties of ultra-thin SiOx/ZrO2 gate dielectric stacks
Houssa, Michel; Naili, Mohamed; Zhao, Chao; Bender, Hugo; Heyns, Marc; Stesmans, Andre (2001) -
Effect of postdeposition anneal conditions on defect density of HfO2 layers measured by wet etching
Claes, Martine; De Gendt, Stefan; Witters, Thomas; Kaushik, Vidya; Conard, Thierry; Zhao, Chao; Manabe, Y.; Delabie, Annelies; Röhr, Erika; Chen, Jerry; Tsai, Wilman; Heyns, Marc (2004) -
Electronic structure of the interface of aluminum nitride with Si(100)
Badylevich, M.; Shamuilia, S.; Afanas'ev, V.V.; Stesmans, Andre; Fedorenko, Y.G.; Zhao, Chao (2008) -
Evaluation of Nb(Si)N as metal gate material
Van Hoornick, Nausikaa; De Witte, Hilde; Witters, Thomas; Zhao, Chao; Conard, Thierry; Huatori, H.; Swerts, Johan; Schram, Tom; Maes, Jan; De Gendt, Stefan; Heyns, Marc (2005)