Browsing by author "Sebaai, Farid"
Now showing items 21-40 of 90
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CMOS integration of thermally stable diffusion and gate replacement (D&GR) high-k/metal gate stacks in DRAM periphery transistors
Dentoni Litta, Eugenio; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O'Sullivan, Barry; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto (2017) -
CMOS patterning over high aspect ratio topographies for N10/N7 using spin-on carbon hardmasks
Hopf, Toby; Ercken, Monique; Mannaert, Geert; Kunnen, Eddy; Tao, Zheng; Vandenbroeck, Nadia; Sebaai, Farid; Kikuchi, Yoshiaki; Mertens, Hans; Kubicek, Stefan; Demuynck, Steven; Horiguchi, Naoto (2017) -
CMOS patterning over high-aspect ratio topographies for N10/N7 using spin-on carbon hardmasks
Hopf, Toby; Ercken, Monique; Mannaert, Geert; Kunnen, Eddy; Tao, Zheng; Vandenbroeck, Nadia; Sebaai, Farid; Kikuchi, Yoshiaki; Mertens, Hans; Kubicek, Stefan; Demuynck, Steven; Horiguchi, Naoto (2017) -
Development of a wet silicon removal process for replacement metal gate and sacrificial fin
Suhard, Samuel; Sebaai, Farid; Pacco, Antoine; Veloso, Anabela; Carbonell, Laure; Claes, Martine; Struyf, Herbert; Mertens, Paul; De Gendt, Stefan (2011) -
Development of a wet silicon removal process for replacement metal gate and sacrificial fin
Suhard, Samuel; Sebaai, Farid; Pacco, Antoine; Veloso, Anabela; Carbonell, Laure; Claes, Martine; Struyf, Herbert; Mertens, Paul; De Gendt, Stefan (2011) -
Dielectric reliability of 70 nm pitch air-gap interconnect structures
Pantouvaki, Marianna; Sebaai, Farid; Kellens, Kristof; Goossens, Danny; Vereecke, Bart; Versluijs, Janko; Van Besien, Els; Caluwaerts, Rudy; Marrant, Koen; Bender, Hugo; Moussa, Alain; Struyf, Herbert; Beyer, Gerald (2011) -
Dissolution of germanium in sulfuric acid based solutions
Gan, Nobuko; Ogawa, Yuichi; Nagai, Tatsuo; Masaoka, Toru; Wostyn, Kurt; Sebaai, Farid; Holsteyns, Frank; Mertens, Paul (2015) -
Dry removal of a surface functionalization chemistry used for pattern collapse prevention
Vereecke, Guy; Komori, Kana; Nakano, Yuta; Sebaai, Farid; Xu, XiuMei; Oniki, Yusuke; Holsteyns, Frank (2018) -
DTCO and TCAD for a 12 layer-EUV ultra-scaled surrounding gate transistor 6T-SRAM
Matagne, Philippe; Nakamura, H.; Kim, Min-Soo; Kikuchi, Yoshiaki; Huynh Bao, Trong; Tao, Zheng; Li, Waikin; Devriendt, Katia; Ragnarsson, Lars-Ake; Boemmels, Juergen; Mallik, Arindam; Altamirano Sanchez, Efrain; Sebaai, Farid; Lorant, Christophe; Jourdan, Nicolas; Porret, Clément; Mocuta, Dan; Harada, N.; Matsuoka, F. (2018) -
Dual-channel technology with Cap-free single metal gate for high performance CMOS in gate-first and gate-last integration
Witters, Liesbeth; Mitard, Jerome; Veloso, Anabela; Hikavyy, Andriy; Franco, Jacopo; Kauerauf, Thomas; Cho, Moon Ju; Schram, Tom; Sebaai, Farid; Yamaguchi, Shinpei; Takeoka, S.; Fukuda, Masahiro; Wang, Wei-E; Duriez, Blandine; Eneman, Geert; Loo, Roger; Kellens, Kristof; Tielens, Hilde; Favia, Paola; Rohr, Erika; Hellings, Geert; Bender, Hugo; Roussel, Philippe; Crabbe, Yvo; Brus, Stephan; Mannaert, Geert; Kubicek, Stefan; Devriendt, Katia; De Meyer, Kristin; Ragnarsson, Lars-Ake; Steegen, An; Horiguchi, Naoto (2011) -
Dummy oxide removal in high-K last process integration how to avoid silicon corrosion issue
Sebaai, Farid; Veloso, Anabela; Takahashi,; Pacco, Antoine; Claes, Martine; Schaekers, Marc; De Gendt, Stefan; Mertens, Paul; Struyf, Herbert (2013) -
Effective work function engineering for aggressively scaled planar and FinFET-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Y.; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2012-09) -
Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Yu; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2013) -
Enabling Logic with Backside Connectivity via n-TSVs and its Potential as a Scaling Booster
Veloso, Anabela; Jourdain, Anne; Hiblot, Gaspard; Schleicher, Filip; D'have, Koen; Sebaai, Farid; Radisic, Dunja; Loo, Roger; Hopf, Toby; De Keersgieter, An; Arimura, Hiroaki; Eneman, Geert; Favia, Paola; Geypen, Jef; Arutchelvan, Goutham; Vaisman Chasin, Adrian; Jang, Doyoung; Nyns, Laura; Rosseel, Erik; Hikavyy, Andriy; Mannaert, Geert; Chan, BT; Devriendt, Katia; Demuynck, Steven; Van der Plas, Geert; Ryckaert, Julien; Beyer, Gerald; Dentoni Litta, Eugenio; Beyne, Eric; Horiguchi, Naoto (2021) -
Fabrication challenges and opportunities for high-mobility materials: from CMOS applications to emerging derivative technologies
Collaert, Nadine; Alian, AliReza; De Jaeger, Brice; Peralagu, Uthayasankaran; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Capogreco, Elena; Devriendt, Katia; Hopf, Toby; Kenis, Karine; Mannaert, Geert; Milenin, Alexey; Peter, Antony; Sebaai, Farid; Teugels, Lieve; van Dorp, Dennis; Wostyn, Kurt; Horiguchi, Naoto; Waldron, Niamh (2019-03) -
FEOL patterning challenges in scaled SRAM with vertical Surrounding Gate Transistors (SGT)
Tao, Zheng; Li, Waikin; Kim, Min-Soo; Devriendt, Katia; Lorant, Christophe; Sebaai, Farid; Porret, Clément; Rosseel, Erik; Sepulveda Marquez, Alfonso; Jourdan, Nicolas; Kikuchi, Yoshiaki; Boemmels, Juergen; Mitard, Jerome; Matagne, Philippe; Ragnarsson, Lars-Ake; Dangol, Anish; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Geypen, Jef; Altamirano Sanchez, Efrain; Lee, James; Li, YiSuo; Kanazawa, Kenichi; Harada, Nozomu; Masuoka, Fujio (2019) -
Fin bending in dimensional scaling
Zhang, Liping; Hellin, David; Sepulveda Marquez, Alfonso; Altamirano Sanchez, Efrain; Lazzarino, Frederic; Morin, Pierre; Wang, Shouhua; Hopf, Toby; Kenis, Karine; Lorant, Christophe; Sebaai, Farid; Batuk, Dmitry; Briggs, Basoene; Mertens, Hans; Demuynck, Steven (2020) -
FinFETs with Thermally Stable RMG Gate Stack for Future DRAM Peripheral Circuits
Capogreco, Elena; Arimura, Hiroaki; Ritzenthaler, Romain; Brus, Stephan; Oniki, Yusuke; Dupuy, Emmanuel; Sebaai, Farid; Radisic, Dunja; Chan, BT; Zhou, Daisy; Machkaoutsan, V.; Yoon, S.; Itokawa, H.; Yamaguchi, M.; Gao, Z.; Fazan, P.; Chen, Y.; Subramanian, Sujith; Ragnarsson, Lars-Ake; Spessot, Alessio; Dentoni Litta, Eugenio (2022) -
First demonstration of ruthenium and molybdenum word lines integrated into 40nm ptch 3D NAND memory devices
Ajaykumar, Arjun; Breuil, Laurent; Katcko, Kostantine; Schleicher, Filip; Sebaai, Farid; Oniki, Yusuke; Ramesh, Siva; Arreghini, Antonio; Nyns, Laura; Soulie, Jean-Philippe; Stiers, Jimmy; Rosmeulen, Maarten; Van den Bosch, Geert (2021) -
First demonstration of strained Ge-in-STI IFQW pFETs featuring raised SiGe75% S/D, replacement metal gate and germanided local interconnects
Mitard, Jerome; Witters, Liesbeth; Vincent, Benjamin; Franco, Jacopo; Favia, Paola; Hikavyy, Andriy; Eneman, Geert; Loo, Roger; Brunco, David; Kabir, Nafees; Bender, Hugo; Sebaai, Farid; Vos, Rita; Mertens, Paul; Milenin, Alexey; Vecchio, Emma; Ragnarsson, Lars-Ake; Collaert, Nadine; Thean, Aaron (2013)