Browsing Conference contributions by imec author "e37bf3bce0b59e496a6f99ac0c4313dfb9c28564"
Now showing items 21-40 of 175
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Atomic layer deposition of HfO2 on (100) and (110) oriented silicon surfaces
Nyns, Laura; Ragnarsson, Lars-Ake; Hall, Lindsey; Delabie, Annelies; Heyns, Marc; Van Elshocht, Sven; Vinckier, Chris; Zimmerman, Paul; De Gendt, Stefan (2007) -
AVD and MOCVD TaCN-based films for gate metal applications on high-k gate dielectrics
Karim, Zia; Barbar, Ghassan; Boissiere, Olivier; Lehnen, Peer; Lohe, Christoph; Seidel, Tom; Adelmann, Christoph; Conard, Thierry; O'Sullivan, Barry; Ragnarsson, Lars-Ake; Schram, Tom; Van Elshocht, Sven; De Gendt, Stefan (2007-10) -
Bias-temperature instability of Si and Si(Ge)-channel sub-1nm EOT p-MOS devices: challenges and solutions
Groeseneken, Guido; Aoulaiche, Marc; Cho, Moon Ju; Franco, Jacopo; Kaczer, Ben; Kauerauf, Thomas; Mitard, Jerome; Ragnarsson, Lars-Ake; Roussel, Philippe; Toledano Luque, Maria (2013) -
BTI reliability improvement strategies in low thermal budget gate dtacks for 3D sequential integration
Franco, Jacopo; Wu, Zhicheng; Rzepa, Gerhard; Vandooren, Anne; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Hellings, Geert; Brus, Stephan; Cott, Daire; De Heyn, Vincent; Groeseneken, Guido; Horiguchi, Naoto; Ryckaert, Julien; Collaert, Nadine; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2018-12) -
BTI reliability of advanced gate stacks for beyond silicon devices: challenges and opportunities
Groeseneken, Guido; Franco, Jacopo; Cho, Moon Ju; Kaczer, Ben; Toledano Luque, Maria; Roussel, Philippe; Kauerauf, Thomas; Alian, AliReza; Mitard, Jerome; Arimura, Hiroaki; Lin, Dennis; Waldron, Niamh; Sioncke, Sonja; Witters, Liesbeth; Mertens, Hans; Ragnarsson, Lars-Ake; Heyns, Marc; Collaert, Nadine; Thean, Aaron; Steegen, An (2014-12) -
Challenges and progresses in high-k metal gate for Silicon-based advanced CMOS transistor architecture
Horiguchi, Naoto; Ragnarsson, Lars-Ake; Mertens, Hans; Arimura, Hiroaki; Ritzenthaler, Romain; Franco, Jacopo; Schram, Tom; Dekkers, Harold; Barla, Kathy; Mocuta, Dan (2017) -
Challenges and solutions of replacement metal gate patterning to enable gate-all-around device scaling
Oniki, Yusuke; Ragnarsson, Lars-Ake; Hideaki, Iino; Cott, Daire; Chan, BT; Sebaai, Farid; Hopf, Toby; Dekkers, Harold; Dentoni Litta, Eugenio; Altamirano Sanchez, Efrain; Holsteyns, Frank; Horiguchi, Naoto (2021) -
Challenges for I/O towards the 3-nm node: Si/SiGe superlatttice I/O finFET in a horizontal nanowire technology and the increased ausceptibility of bulk finFET technology to single event latchup
Hellings, Geert; Mertens, Hans; Karp, James; Maillard, Pierre; Subirats, Alexandre; Simoen, Eddy; Schram, Tom; Ragnarsson, Lars-Ake; Simicic, Marko; Chen, Shih-Hung; Parvais, Bertrand; Boudier, D; Cretu, B; Machillot, J; Pena, V; Sun, S; Yoshida, N; Kim, N; Mocuta, Anda; Linten, Dimitri; Hart, Michael; Horiguchi, Naoto (2018) -
Challenges in integration of metal gate high-k dielectrics gate stacks
Tsai, W.; Ragnarsson, Lars-Ake; Schram, Tom; De Gendt, Stefan; Heyns, Marc (2004) -
Channel Length Dependence of PBTI in High-k First RMG Gate Stack Integration Scheme
Parihar, Narendra; Arutchelvan, Goutham; Franco, Jacopo; Baudot, Sylvain; Opdebeeck, Ann; Demuynck, Steven; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Mitard, Jerome; De Heyn, Vincent; Mercha, Abdelkarim (2021) -
Comparison of sub 1 nm TiN/HfO2 with Poly-Si/HfO2 gate stacks u sing scaled chemical oxide interfaces
Tsai, Wilman; Ragnarsson, Lars-Ake; Chen, P.J.; Onsia, Bart; Carter, Richard; Cartier, Eduard; Young, Edward; Green, Martin; Caymax, Matty; De Gendt, Stefan; Heyns, Marc (2003) -
Degradation and breakdown of 0.9 nm EOT SiO2/ ALD HfO2/metal gate stacks under positive constant voltage stress
Degraeve, Robin; Kauerauf, Thomas; Cho, Moon Ju; Zahid, Mohammed; Ragnarsson, Lars-Ake; Brunco, David; Kaczer, Ben; Roussel, Philippe; De Gendt, Stefan; Groeseneken, Guido (2005-12) -
Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Putcha, Vamsi; Kaczer, Ben; Shie, Bo-Shiuan; Shi, Xiaoping; Reyhaneh, Mahlouji; Nyns, Laura; Zhou, Daisy; Waldron, Niamh; Maes, Jan; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Arimura, Hiroaki; Schram, Tom; Ragnarsson, Lars-Ake; Sibaja-Hernandez, Arturo; Hellings, Geert; Horiguchi, Naoto; Heyns, Marc; Groeseneken, Guido; Linten, Dimitri; Collaert, Nadine; Thean, Aaron (2016) -
Demonstration of sufficient BTI reliability for a 14-nm FinFET 1.8V I/O technology featuring a thick ALD SiO2 IL and Ge p-channel
Hellings, Geert; Subirats, Alexandre; Franco, Jacopo; Schram, Tom; Ragnarsson, Lars-Ake; Witters, Liesbeth; Roussel, Philippe; Linten, Dimitri; Horiguchi, Naoto; Boschke, Roman (2017) -
Development of ALD HfZrOx with TDEAH, TDEAZ and H2O
Shi, Xiaoping; Tielens, Hilde; Takeoka, Shinji; Nakabayashi, Takashi; Nyns, Laura; Adelmann, Christoph; Delabie, Annelies; Schram, Tom; Ragnarsson, Lars-Ake; Schaekers, Marc; Date, Lucien; Schreutelkamp, Rob; Van Elshocht, Sven (2010) -
Device architectures and their integration challenges for 1x nm node: FinFETs and high mobility channel
Horiguchi, Naoto; Zschaetzsch, Gerd; Sasaki, Yuichiro; Kambham, Ajay Kumar; Togo, Mitsuhiro; Cho, Moon Ju; Ragnarsson, Lars-Ake; Hellings, Geert; Mitard, Jerome; Franco, Jacopo; Eneman, Geert; Witters, Liesbeth; Waldron, Niamh; Lin, Dennis; Pantisano, Luigi; Collaert, Nadine; Vandervorst, Wilfried; Thean, Aaron (2012-09) -
Device challenges for logic scaling for sub-5 nm node
Jang, Doyoung; Garcia Bardon, Marie; Yakimets, Dmitry; Schuddinck, Pieter; Ragnarsson, Lars-Ake; Sharan, Neha; Parvais, Bertrand; Spessot, Alessio; Verkest, Diederik; Mocuta, Anda (2018) -
Dipole-First Gate Stack as a Scalable and Thermal Budget Flexible Multi-Vt Solution for Nanosheet/CFET Devices
Arimura, Hiroaki; Ragnarsson, Lars-Ake; Oniki, Yusuke; Franco, Jacopo; Vandooren, Anne; Brus, Stephan; Leonhardt, A.; Sippola, P.; Ivanova, T.; Verni, G. Alessio; Chang, R-J; Xie, Q.; Givens, M.; Mitard, Jerome; Biesemans, Serge; Dentoni Litta, Eugenio; Horiguchi, Naoto (2021) -
Direct measurement of barrier height at the HfO2/poly-Si interface:
Pantisano, Luigi; Chen, Pei Jun; Afanas'ev, Valeri; Ragnarsson, Lars-Ake; Pourtois, Geoffrey; Groeseneken, Guido (2004-06) -
Direct measurement of the inversion charge in MOSFETs: application to mobility extraction in alternative gate dielectrics
Kerber, Andreas; Cartier, Eduard; Ragnarsson, Lars-Ake; Rosmeulen, Maarten; Pantisano, Luigi; Degraeve, Robin; Kim, Young-Chang; Groeseneken, Guido (2003)