Browsing Articles by imec author "36ff3f8d8c7bd4948ebe09fa9e25b16c0ee096f1"
Now showing items 1-20 of 36
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A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET
Vais, Abhitosh; Franco, Jacopo; Martens, Koen; Lin, Dennis; Sioncke, Sonja; Putcha, Vamsi; Nyns, Laura; Maes, Jan; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, Xiaoqiang; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2017) -
A sensitivity map-based approach to profile defects in MIM capacitors from I-V, C-V and G-V measurements
Padovani, Andrea; Kaczer, Ben; Pesic, Milan; Belmonte, Attilio; Popovici, Mihaela Ioana; Nyns, Laura; Linten, Dimitri; Afanasiev, Valeri; Shlyakhov, Ilya; Lee, Younggon; Park, Hokyung; Larcher, Luca (2019) -
Al2O3/InGaAs metal-oxide-semiconductor interface properties: impact of Gd2O3 and Sc2O3 interfacial layers by atomic layer deposition
Ameen, Mahmoud; Nyns, Laura; Sioncke, Sonja; Lin, Dennis; Ivanov, Tsvetan; Conard, Thierry; Meersschaut, Johan; Feteha, M. Y.; Van Elshocht, Sven; Delabie, Annelies (2014) -
ALD and parasitic growth characteristics of the tetrakisethylmethylamino hafnium TEMAH/H2O process
Nyns, Laura; Delabie, Annelies; Swerts, Johan; Van Elshocht, Sven; De Gendt, Stefan (2010) -
Amorphous gadolinium aluminate as a dielectric and sulfur for indium phosphide passivation
van Dorp, Dennis; Nyns, Laura; Cuypers, Daniel; Ivanov, Tsvetan; Brizzi, Simone; Tallarida, Massimo; Fleischmann, Claudia; Hönicke, Philipp; Müller, Matthias; Richard, Olivier; Schmeisser, Dieter; De Gendt, Stefan; Lin, Dennis; Adelmann, Christoph (2019) -
Atomic layer deposition of Al2O3 on S-passivated Ge
Sioncke, Sonja; Ceuppens, Joris; Lin, Dennis; Nyns, Laura; Delabie, Annelies; Struyf, Herbert; De Gendt, Stefan; Muller, Matthias; Beckhoff, Burkhard; Caymax, Matty (2011) -
Atomic layer deposition of high-k dielectrics on sulphur-passivated germanium
Sioncke, Sonja; Lin, Dennis; Nyns, Laura; Brammertz, Guy; Delabie, Annelies; Conard, Thierry; Franquet, Alexis; Meuris, Marc; Struyf, Herbert; De Gendt, Stefan; Heyns, Marc; Fleischmann, Claudia; Temst, Kristiaan; Vantomme, Andre; Muller, Matthias; Kobe, Michael; Beckhoff, Burkhard; Caymax, Matty (2011) -
Atomic layer deposition of scandium-based oxides
Nyns, Laura; Lisoni, Judit; Van den Bosch, Geert; Van Elshocht, Sven; Van Houdt, Jan (2014) -
Atomic-layer-deposited tantalum silicate as a gate dielectric for III-V MOS devices
Adelmann, Christoph; Lin, Dennis; Nyns, Laura; Schepers, Bart; Delabie, Annelies; Van Elshocht, Sven; Caymax, Matty (2011) -
Band alignment of Hf–Zr oxides on Al2O3/GeO2/Ge stacks
Fadida, Sivan; Eisenberg, Moshe; Nyns, Laura; Van Elshocht, Sven; Caymax, Matty (2011) -
Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs
Franco, Jacopo; Kaczer, Ben; Vais, Abhitosh; Alian, AliReza; Arimura, Hiroaki; Putcha, Vamsi; Sioncke, Sonja; Waldron, Niamh; Zhou, Daisy; Nyns, Laura; Mitard, Jerome; Heyns, Marc; Groeseneken, Guido; Collaert, Nadine; Linten, Dimitri; Thean, Aaron (2016) -
Chemisorption of ALD precursors in and on porous low-k films
Verdonck, Patrick; Delabie, Annelies; Swerts, Johan; Farrell, Leo; Baklanov, Mikhaïl; Tielens, Hilde; Van Besien, Els; Witters, Thomas; Nyns, Laura; Van Elshocht, Sven (2013) -
Development of ALD HfZrOx with TDEAH/TDEAZ and H2O
Shi, Xiaoping; Tielens, Hilde; Takeoka, Shinji; Nakabayashi, Takashi; Nyns, Laura; Adelmann, Christoph; Delabie, Annelies; Schram, Tom; Ragnarsson, Lars-Ake; Schaekers, Marc; Date, Lucien; Schreutelkamp, Rob; Van Elshocht, Sven (2011) -
Diffusion-mediated growth and size-fependent nanoparticle reactivity during ruthenium atomic layer deposition on dielectric substrates
Soethoudt, Job; Grillo, Fabio; Marques, Esteban; Van Ommen, Ruud; Tomczak, Yoann; Nyns, Laura; Van Elshocht, Sven; Delabie, Annelies (2018) -
Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack
Fadida, Sivan; Shekhter, P.; Cvetko, D.; Floreano, L.; Verdini, A; Nyns, Laura; Van Elshocht, Sven; Kymissis, I.; Eizenberg, Moshe (2014) -
Effect of remote oxygen scavenging on electrical properties of Ge-based metal-oxide-semiconductor capacitors
Fadida, Sivan; Nyns, Laura; Van Elshocht, Sven; Eizenberg, Moshe (2017) -
Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices
Reale, G.; Belmonte, Attilio; Fantini, Andrea; Radhakrishnan, Janaki; Redolfi, Augusto; Devulder, Wouter; Nyns, Laura; Kundu, Shreya; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2021) -
Electrical properties of low-VT metal-gated n-MOSFETs using La2O3/SiOx as interfacial layer between HfLaO high-k dielectrics and Si channel
Chang, Shou-Zen; Yu, Hong-Yu; Adelmann, Christoph; Delabie, Annelies; Wang, Xin Peng; Van Elshocht, Sven; Akheyar, Amal; Nyns, Laura; Swerts, Johan; Aoulaiche, Marc; Kerner, Christoph; Absil, Philippe; Hoffmann, Thomas Y.; Biesemans, Serge (2008-05) -
Growth and material characterization of hafnium titanates deposited by atomic layer deposition
Popovici, Mihaela Ioana; Delabie, Annelies; Van Elshocht, Sven; Clima, Sergiu; Pourtois, Geoffrey; Swerts, Johan; Nyns, Laura; Tomida, Kazuyuki; Menou, Nicolas; Wouters, Dirk; Opsomer, Karl; Detavernier, Christophe; Kittl, Jorge (2009) -
Hf-based high-k dielectrics for p-Ge MOS gate stacks
Fadida, Sivan; Palumbo, Felix; Nyns, Laura; Lin, Dennis; Van Elshocht, Sven; Caymax, Matty; Eizenberg, Moshe (2014)