Browsing by Author "Bellens, Rudi"
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Publication A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides
Proceedings paper1995, International Electron Devices Meeting. Technical Digest, 10/12/1995, p.863-866Publication A model study of the hot-carrier problem in LDD and overlapped LDD MOSFETs
Journal article1995, Microelectronic Engineering, 28, p.285-288Publication A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown
Journal article1998, IEEE Trans. Electron Devices, (45) 2, p.472-481Publication Analysis and optimisation of the hot-carrier degradation performance of 0.35μm fully overlapped LDD devices
Proceedings paper1995, 33rd Annual IEEE International Reliability Physics Conference - IRPS, 4/05/1995, p.254-259Publication Characterization of hot-carrier aging of a 0.35µm fully overlapped-LDD CMOS technology
Proceedings paper1995, 20th International Conference on Microelectronics. Proceedings, 12/09/1995, p.197-202Publication Charge pumping of single interface traps in submicron MOSFET's
Proceedings paper1994, 24th European Solid State Device Research Conference - ESSDERC, 11/09/1994, p.609-612Publication Degradation and nitridation dependence of steady-state stress induced leakage current (SILC)
Oral presentation1996, 27th IEEE Semiconductor Interface Specialists Conference (SISC); December 5-7, 1996; San Diego, Calif., USA.Publication FOND (Fully Overlapped Nitride-Etch Defined Device): A New Device Architecture for High-Reliability and High-Performance Deep Submicron CMOS Technology
Proceedings paper1994, Technical Digest International Electron Devices Meeting - IEDM, 12/12/1994, p.4.5.1-4.5.4Publication Hot-carrier degradation behavior of N- and P-channel MOSFETs under dynamic operation conditions
Journal article1994, IEEE Transactions on Electron Devices, (41) 8, p.1421-1428Publication Hot-carrier degradation in submicrometre MOSFETs: from uniform injection towards the real operating conditions
Journal article1995, Semiconductor Science and Technology, (10) 9, p.1208-1220Publication New insights in the impact of the breakdown mechanisms on the statistics of intrinsic and extrinsic breakdown in thin oxides
Oral presentation1996, 27th IEEE Semiconductor Interface Specialists Conference (SISC); December 5-7, 1996; San Diego, Calif., USA.Publication New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
Journal article1998, IEEE Trans. Electron Devices, (45) 4, p.904-911Publication Observation of single interface traps in submicron MOSFET's by charge pumping
Journal article1996, IEEE Transactions on Electron Devices, (43) 6, p.940-945Publication On the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown
Proceedings paper1996, International Reliability Physics Symposium - IRPS, 29/04/1996, p.44-54Publication On the hot-carrier-induced post-stress interface trap generation in n-channel MOS transistors
Journal article1994, IEEE Transactions on Electron Devices, (41) 3, p.413-419Publication Performance and reliability aspects of FOND: A new deep submicron CMOS device concept
Journal article1996, IEEE Transactions on Electron Devices, (43) 9, p.1407-1415Publication Study of DC stress induced leakage current (SILC) and its dependence on oxide nitridation
Proceedings paper1996, Proceedings of the 26th European Solid-State Device Research Conference - ESSDERC, 9/09/1996, p.361-364Publication Study of the hot-carrier degradation performance of 0.35 μm fully overlapped LDD devices
Journal article1995, Microelectronic Engineering, 28, p.265-268Publication Understanding of the hot-carrier degradation in submicron MOSFET's : from uniform injection towards the real operating conditions
Proceedings paper1994, Proceedings of the European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF, 4/10/1994, p.103-115