Browsing by Author "Brunco, David"

15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process

Analysis of junction leakage in advanced germanium p+/n junctions

Atomic layer deposition as an enabling technology for fabrication of germanium MOS transistor

Atomic layer deposition of hafnium oxide on Ge and GaAs substrates: precursors and surface preparation

Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels

Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels

Band offsets in biaxially stressed SiGe layers for arbitrary orientations

Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates

Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge Layers on Si substrates

Defect engineering aspects of advanced Ge process modules

Defects and electrical performance of germanium PMOS devices

Defects, junction leakage and electrical performance of Ge pFET devices

Degradation and breakdown of 0.9 nm EOT SiO2/ ALD HfO2/metal gate stacks under positive constant voltage stress

Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers

Distribution and generation of traps in SiO2/Al2O3 gate stacks

Etch rate study of germanium, GaAs, and InGaAs: a challenge in semiconductor processing.

Etch rates of Ge, GaAs and InGaAs in acids, bases and peroxide based mixtures

Etching Ge, GaAs and InGaAs: A challenge in semiconductor processing

First demonstration of strained Ge-in-STI IFQW pFETs featuring raised SiGe75% S/D, replacement metal gate and germanided local interconnects

Flat-band voltage shift of Ruthenium gated stacks and its link with the formation of a thin Ruthenium oxide layer at the Ruthenium/dielectric interface