Browsing by Author "Conard, Thierry"
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Publication 3D analysis of intermetallic formation in blankets and micro-bumps.
Oral presentation2019, SIMS 22Publication A chemical role of refractory metal caps in Co silicidation: Evidence of SiO2 reduction by Ti cap
; ; Journal article1999, J. Materials Research, (14) 11, p.4402-4408Publication A combined SPM/TOFSIMS tool to obtain real chemical 3D information
Meeting abstract2017, 21st International Conference on Secondary Ion Mass Spectrometry - SIMS21, 10/09/2017, p.304Publication A comparative X-ray photoelectron spectroscopy and medium-energy ion-scattering study of ultra-thin, Hf-based high-k films
Journal article2010-03, Surface and Interface Analysis, (2010) 42, p.1057-1060Publication A controlled deposition of organic contamination and the removal with ozone based cleaning
Proceedings paper2001, Ultra Clean Processing of Silicon Surfaces 2000: Proceedings of the 5th International Conference - UCPSS, 18/09/2000, p.223-226Publication A correlative ToF-SIMS/SPM methodology for probing 3D devices
Journal article2020, Analytical Chemistry, (92) 16, p.11413-11419Publication A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.535-538Publication A holistic approach of SIMS analysis for advanced semiconductor structures
Proceedings paper2019, SIMS 22 - 22nd International Conference on Secondary Ion Mass Spectrometry, 20/10/2019Publication A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers
Oral presentation2002, MRS Fall Meeting Symposium N: Novel Materials and Processes for Advanced CMOSPublication A new scaling issue in the electrical behavior of damascene versus plasma-etched interconnects
Proceedings paper1998, Proceedings Advanced Metallization and Interconnect Systems for ULSI Applications in 1997, 30/09/1997, p.535-541Publication A novel concept for contact etch residue removal
Proceedings paper2007, Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 10, 7/10/2007, p.403-407Publication A quantitative adhesion study between contacting materials in Cu damascene structures
Journal article2002, Applied Surface Science, (201) 1_4, p.20-34Publication A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation
Proceedings paper2019-06, 2019 Symposia on VLSI Technology and Circuits, 9/06/2019, p.T92-T93Publication A scientific framework for establishing ultrafast molecular dynamic research in imec's AttoLab
Proceedings paper2023, Conference on Advances in Patterning Materials and Processes XL, FEB 27-MAR 01, 2023, p.124980WPublication A study of growth mechanism of TiN and WCN barrier films deposited by atomic layer deposition on different substrates
Meeting abstract2002, B-ALD-5: The 5th Baltic Symposium on Atomic Layer Deposition, 24/10/2002, p.21Publication A Study of SiCN Wafer-to-Wafer Bonding and Impact of Wafer Warpage
; ; ; ; Publication A study of the influence of typical wet chemical treatments on the germanium wafer surface
Oral presentation2004, 7th International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSSPublication A study of the influence of typical wet chemical treatments on the germanium wafer surface
Proceedings paper2005, Ultra Clean Processing of Silicon Surfaces VII: Proceedings of the 7th International Symposium, 20/09/2004, p.27-30Publication Achieving conduction band-edge effective work functions by La2O3 capping of hafnium silicates
Journal article2007-06, IEEE Electron Device Letters, (28) 6, p.486-488Publication Achieving High Ferroelectric Polarization in Ultrathin BaTiO3 Films on Si
Journal article2025, ADVANCED ELECTRONIC MATERIALS, (11) 4, p.Art. 2400440