Browsing by Author "Dhayalan, Sathish Kumar"

Advanced low temperature epitaxy of high mobility materials

C atom distribution in Si:C and Si:C:P epitaxial layers studied using Raman spectroscopy

Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy

Catalyst assisted low temperature pre epitaxial cleaning for Si and SiGe surfaces

Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETs

Characterization of epitaxial Si:C:P and Si:P layers for source/drain formation in advanced bulk finFETs

Chemical vapour deposition of Si:C and Si:C:P films – evaluation of material quality as a function of C content, carrier gas and doping

Chemical vapour deposition of Si:C and Si:CP thin films using disilane

Defects reduction and characterization of epitaxial Si:C/Si:C:P layers grown using cyclic deposition and etching technique

Enabling GeH4-HCl in-situ pre-epi clean: impact of water quality on HF last process performance

Group IV Epi processing, evolution in CMOS from 90 to 10nm node

HF-last wet clean in combination with a low temperature GeH4-assisted HCl in-situ clean prior to Si0.8Ge0.2-on-Si epitaxial growth

High Ge content SiGe thin films: growth, properties and integration

Insights into the C distribution in Si:C/Si:C:P and the annealing behavior of Si:C layers

Local arrangement of substitutional C atoms and the thermal stability of epitaxial Si:C(P) grown by CVD

Low temperature pre-epi Treatment: critical parameters to control interface contamination

Low-temperature pre-epitaxy surface cleaning of Si and SiGe

Material studies on Si:C and Si:CP epitaxial films grown using disilane, monomethylsilane and phosphine

Material studies on Si:C epitaxial films grown by CVD

On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications