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Browsing by Author "Huffman, Craig"

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    Advanced organic polymers for the aggressive scaling of low-k materials

    Pantouvaki, Marianna  
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    Huffman, Craig
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    Zhao, Larry
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    Heylen, Nancy  
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    Ono, Y
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    Nakajima, M
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    Nakatani, K
    Journal article
    2011, Japanese Journal of Applied Physics, (80) 4, p.04DB01
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    Advanced organic polymers for the aggressive scaling of low-k materials

    Pantouvaki, Marianna  
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    Zhao, Larry
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    Huffman, Craig
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    Heylen, Nancy  
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    Ono, Yukiharu
    Proceedings paper
    2010, International Conference on Solid State Devices and Materials - SSDM, 22/09/2010, p.844-845
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    Demonstration of scaled 0.099μm² FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology

    Veloso, Anabela  
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    Demuynck, Steven  
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    Ercken, Monique  
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    Goethals, Mieke
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    Locorotondo, Sabrina  
    Proceedings paper
    2009-12, IEEE International Electron Devices Meeting - IEDM, 7/12/2009, p.301-304
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    Dielectric reliability of 50nm 1/2 pitch structures in Aurora® LK

    Demuynck, Steven  
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    Kim, Hongun
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    Huffman, Craig
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    Darnon, Maxime
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    Struyf, Herbert  
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    Versluijs, Janko  
    Proceedings paper
    2008, 40th International Confernece on Solid STate Devices and Materials, 22/09/2008
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    Dielectric reliability of 50nm half pitch structures in Aurora® LK

    Demuynck, Steven  
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    Kim, Honggun
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    Huffman, Craig
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    Darnon, Maxime
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    Struyf, Herbert  
    Journal article
    2009, Japanese Journal of Applied Physics, (48) 4, p.04C018
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    EUV lithography implementation on contact and metal interconnect level of a 22nm node 0.099um2 6T-SRAM cell

    Goethals, Mieke
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    Demuynck, Steven  
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    Van Roey, Frieda  
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    Baudemprez, Bart  
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    Hermans, Jan  
    Proceedings paper
    2009, International Symposium on Extreme Ultraviolet Lithography, 18/10/2009
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    Full-field EUV and immersion lithography integration in 0.186μm² FinFET 6T-SRAM cell

    Veloso, Anabela  
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    Demuynck, Steven  
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    Ercken, Monique  
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    Goethals, Mieke
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    Demand, Marc  
    Proceedings paper
    2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.861-864
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    High yield sub-0.1μm² 6T-SRAM Cells, featuring high-k/metal-gate Finfet devices, double gate patterning, a novel Fin etch strategy, full-field EUV lithography and optimized junction design & layout

    Horiguchi, Naoto  
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    Demuynck, Steven  
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    Ercken, Monique  
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    Locorotondo, Sabrina  
    Proceedings paper
    2010, IEEE Symposium on VLSI Technology, 15/06/2010, p.23-24
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    Impact of plasma exposure on organic low-k materials

    Smirnov, Evgeny
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    Ferchichi, Abdelkarim
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    Huffman, Craig
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    Baklanov, Mikhaïl
    Proceedings paper
    2010, International Conference on Micro- and Nanoelectronics 2009, 5/10/2009, p.752107
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    Integration and dielectric reliability of 30nm 1/2 pitch structures in Aurora LK HM

    Demuynck, Steven  
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    Huffman, Craig
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    Claes, Martine  
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    Suhard, Samuel  
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    Versluijs, Janko  
    Proceedings paper
    2009, International Conference on Solid State Devices and Materials - SSDM, 7/10/2009, p.1094-1095
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    Integration and dielectric reliability of 30nm ½ pitch structures in Aurora® LK HM

    Demuynck, Steven  
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    Huffman, Craig
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    Claes, Martine  
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    Suhard, Samuel  
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    Versluijs, Janko  
    Journal article
    2010, Japanese Journal of Applied Physics, (49) 4, p.04DB05
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    Integration of an organic ultra low-k (k=2.2) material

    Pantouvaki, Marianna  
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    Zhao, Larry
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    Huffman, Craig
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    Heylen, Nancy  
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    Ferchichi, Abdelkarim
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    Ono, Y.
    Oral presentation
    2009, Advanced Metallization Conference - AMC
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    Integration of an organic ultra low-k (k=2.2) material

    Pantouvaki, Marianna  
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    Zhao, Larry
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    Huffman, Craig
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    Heylen, Nancy  
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    Ferchichi, Abdelkarim
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    Ono, Y.
    Proceedings paper
    2010, Advanced Metallization Conference 2009 - AMC 2009, 13/10/2009, p.173-184
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    Integration of porogen-based low-k films: influence of capping layer thickness and long thermal anneals on low-k damage and reliability

    De Roest, David  
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    Vereecke, Bart  
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    Huffman, Craig
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    Heylen, Nancy  
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    Croes, Kristof  
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    Arai, H
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    Takamure, N
    Meeting abstract
    2009, Advanced Metallization Conference, 13/10/2009
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    Integration of porogen-based low-k films: influence of capping layer thickness and long thermal anneals on low-k damage and reliability

    De Roest, David  
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    Vereecke, Bart  
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    Huffman, Craig
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    Heylen, Nancy  
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    Croes, Kristof  
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    Arai, H.
    Oral presentation
    2009, ADMETA 2009
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    Metal hard-mask based double patterning for 22nm and beyond

    Struyf, Herbert  
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    de Marneffe, Jean-Francois  
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    Goossens, Danny  
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    Hendrickx, Dirk  
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    Huffman, Craig
    Proceedings paper
    2010, Advanced Metallization Conference 2009 - AMC 2009, 13/10/2009, p.75-82
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    Plasma process optimization for dual pattern 30nm half pitch interconnect application

    Huffman, Craig
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    de Marneffe, Jean-Francois  
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    Demuynck, Steven  
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    Goossens, Danny  
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    Beyer, Gerald  
    Meeting abstract
    2009, Materials for Advance Metallization Conference - MAM, 8/03/2009
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    Plasma sealing of advanced organic low-k material

    Smirnov, Evgeny
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    Pantouvaki, Marianna  
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    Huffman, Craig
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    Vanstreels, Kris  
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    Baklanov, Mikhaïl
    Oral presentation
    2011, 4th International Workshop on Plasma Etch and Strip in Microelectronics - PESM
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    Preface to the Focus Issue on Atomic Layer Etch and Clean

    Huffman, Craig
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    Hess, D.W.
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    de Marneffe, Jean-Francois  
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    Sekine, M.
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    De Gendt, Stefan  
    Journal article
    2015, ECS Journal of Solid State Science and Technology, (4) 6, p.Y7
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    The small-gap technique: understanding an ion-shading method for plasma-surface interactions study

    de Marneffe, Jean-Francois  
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    Jarnac, Amelie
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    Conard, Thierry  
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    Hendrickx, Dirk  
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    Huffman, Craig
    Meeting abstract
    2010, 3rd International Plasma Etch and Strip for Microelectronics Workshop - PESM, 5/03/2010
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