Browsing by Author "Ji, Zhigang"

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/AC NBTI Stress/Recovery Condition in Si p-FinFETs

A Pragmatic Model to Predict Future Device Aging

A single pulse charge pumping technique for fast measurements of interface states

Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization

An analysis of the NBTI-induced threshold voltage shift evaluated by different techniques

An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel

Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack

Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal

Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs

Comparison of DC/AC Hot Carrier Degradation between Short Channel Si Bulk and SiGe SOI p-FinFETs

Defect characterization after ESD stress: merging TLP and Pulsed-IV techniques

Degradation Mechanism of Short Channel p-FinFETs under Hot Carrier Stress and Constant Voltage Stress

Energy distribution of positive charges in Al2O3/GeO2/Ge pMOSFETs

ESD characterization of planar InGaAs devices

Evaluation and solutions for P/E window instability induced by electron trapping in high-k inter-gate dielectrics of flash memory cells

Experimental evidence toward understanding charge pumping signals in 3-D devices with Poly-Si channel

Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging

Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs

NBTI lifetime prediction and kinetics at operation bias based on ultrafast pulse measurement

NBTI-generated defects in nanoscaled devices: fast characterization methodology and modeling