Browsing by Author "Lanckmans, Filip"
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Publication A comparative study of copper drift diffusion in plasma deposited a-SiC : H and Silicon Nitride
Journal article2001, Microelectronic Engineering, (55) 1_4, p.329-335Publication A comparative study of copper drift diffusion in plasma deposited A-Sic:H and silicon nitride
Oral presentation2000, Materials for Advanced Metallization Conference - MAM; February 28 - March 1, 2000; Stresa, Italy.Publication A modified capacitance / voltage technique to characterize copper drift diffusion in organic low-K dielectrics
Proceedings paper2000, Advanced Metallization Conference 1999 - AMC 1999, 28/09/1999, p.409-415Publication A modified capacitance/voltage technique to characterize copper drift diffusion in organic low-K dielectrics
Oral presentation1999, Advanced Metallization Conference; September 28-30, 1999; Orlando, FL, USA.Publication A quantitative adhesion study between contacting materials in Cu damascene structures
Journal article2002, Applied Surface Science, (201) 1_4, p.20-34Publication A quantitative study of the adhesion between copper, barrier and organic low-k polymers
Proceedings paper2001, Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics, 23/04/2000, p.D1.4.1-D1.4.6Publication A quantitative study of the adhesion between copper, barrier and organic low-k polymers
Oral presentation2000, MRS Spring Meeting 2000. Symposium D: Materials, Technology, and Reliability for Advanced Interconnects and Low-k DielectricsPublication Adhesion study between materials for integration of copper and inorganic low-k dielectrics
; ; ; ; Oral presentation2001, MRS Spring Meeting. Symposium L: Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics; AprilPublication Advanced solutions for copper and low k technology
Oral presentation2000, Semicon Europe; 2000; München, Germany.Publication Barriers for Cu/low k damascene structures
Journal article2001, Semiconductor Fabtech, 14, p.189-191Publication Characterisation of plasma etch related residues formed on top of ECD Cu
Oral presentation1999, Advanced Metallization Conference; 28-30 September 1999; Orlando, FL, USA.Publication Characterisation of plasma etch releted residues formed on top of ECD Cu films
Proceedings paper2000, Advanced Metallization Conference 1999 - AMC 1999, 28/09/1999, p.615-619Publication Characterization and barrier properties for Cu metallization of tungsten nitride deposited by PECVD using WF6 +N2 +H2
Proceedings paper1999, Advanced Metallization Conference in 1998 - AMC 1998, 6/10/1998, p.297-303Publication Characterization and barrier properties for Cu metallization of tungsten nitride deposited by PECVD using WF6+N2+H2
Oral presentation1998, Advanced Metallization Conference; October 1998;Publication Characterization of WF6/N2/H2 plasma enhanced chemical vapor deposited WxN films as barriers for Cu metallization
Journal article2000, J. Vacuum Science and Technology B, (B18) 1, p.242-251Publication Diffusion and adhesion issues of low permittivity dielectrics with copper for high performance interconnects
Lanckmans, FilipPHD thesis2002-03Publication Diffusion barrier integrity and electrical performance of Cu/porous dielectric damascene lines
Journal article2003, IEEE Electron Device Letters, (24) 3, p.147-149Publication EFTEM analysis of the interaction of CO with a fluorinated organic dielectric
Proceedings paper2000, Proceedings EUREM 12, 9/07/2000, p.1325-1326Publication Material characteristics and damascene patterning of a fluoropolymer low-k film
Oral presentation2000, Advanced Metallization Conference; October 2000; San Diego, CA, USA.Publication Post dry-etch cleaning issues of an organic low-K dielectric
Proceedings paper1999, Ultra Clean Processing of Silicon Surfaces; Proceedings of the 4th International Symposium on Ultra Clean Processing of Silicon, 21/09/1998, p.89-92