Browsing by Author "Lujan, Guilherme"
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Publication A new method to calculate leakage current and its applications for sub-45nm MOSFETs
Proceedings paper2005, Proceedings of the 35th European Solid-State Device Research Conference - ESSDERC, 12/09/2005, p.489-492Publication ALD deposition of high-k and metal gate stacks for advanced CMOS applications
Proceedings paper2004, Atomic Layer Deposition Conference, 16/08/2004Publication Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility
Journal article2005-06, Microelectronic Engineering, 80, p.82-85Publication Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices
Journal article2005-06, Microelectronic Engineering, 80, p.86-89Publication Electrical and physical characterization of MOSFETs with MBE grown La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow
Oral presentation2005, Workshop "Nouveaux Oxides à Forte Permittivité dans l'Intégration des Semiconducteurs"Publication Electrical characterization of high-k materials prepared by Atomic Layer CVD (ALCVD)
Proceedings paper2001, Extended Abstracts of the International Workshop on Gate Insulator. IWGI 2001; 1-2 November 2001; Tokyo, Japan., p.94-99Publication Experimental analysis of a Ge-HfO2-TaN gate stack with a large amount of interface states
Proceedings paper2005-04, Proceedings of the International Conference on Microelectronic Test Structures, 4/04/2005, p.191-196Publication Experimental analysis of a Ge-HfO2-TaN gate stack with a large amount of interface states
Oral presentation2004, Semiconductor Interface Specialists Conference - SISCPublication Germanium deep-sub micron PMOS transistors with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm prototyping line
Proceedings paper2004, SiGe: Materials, Processing, and Devices. Proceedings of the 1st International Sympsoium, 3/10/2004, p.693-700Publication High-k dielectrics integration prospects
Proceedings paper2005, ULSI Process Integration IV, 15/05/2005, p.169-192Publication Impact of ALCVD and PVD titanium nitride deposition on metal gate capacitors
Proceedings paper2002, ESSDERC - 32nd European Solid-State Device Research Conference, 24/09/2002, p.583-586Publication Interface passivation mechanisms in metal gated oxide capacitors
Proceedings paper2004-11, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 20/09/2004, p.325-328Publication Investigation of poly-Si/HfO2 gate stacks in a self-aligned 65 nm NMOS process flow
Oral presentation2002, 33rd IEEE Semiconductor Interface Specialists Conference - SISCPublication Investigation of poly-Si/HfO2 gate stacks in a self-aligned 70nm MOS process flow
Proceedings paper2003, 33rd European Solid-State Devices Research Conference - ESSDERC, 16/09/2003, p.251-254Publication Issues, achievements and challenges towards integration of high-k dielectrics
Proceedings paper2002, Frontiers in Electronics. Future Chips. Proceedings of the 2002 Workshop, 6/01/2002, p.?-?Publication Issues, achievements and challenges towards intergration of high-k dielectrics
Proceedings paper2002, 5th International Forum on Semiconductor Technology - IFST, 21/02/2002Publication Materials and electrical characterization of metal gate electrodes on high-k dielectrics for advanced CMOS technologies
Proceedings paper2002, Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials - SSDM, 17/09/2002, p.174-175Publication Mobility degradation in high-k transistors: the role of the charge scattering
; ; ; ; Proceedings paper2003, 33rd European Solid-State Devices Research Conference - ESSDERC, 16/09/2003Publication Modeling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance
Proceedings paper2004, 13th Workshop on Dielectrics in Microelectronics - WODIM, 28/06/2004