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Browsing by Author "Lukyanchikova, N."

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    Back and front interface related generation-recombination noise in buried-channel SOI p-MOSFET's

    Lukyanchikova, N.
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    Petrichuk, M.
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    Garbar, N.
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    Simoen, Eddy  
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    Claeys, Cor
    Journal article
    1996, IEEE Transactions on Electron Devices, (43) 3, p.417-423
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    Back-gate induced noise overshoot in partially-depleted SOI MOSFETs

    Lukyanchikova, N.
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    Garbar, N.
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    Smolanka, A.
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    Simoen, Eddy  
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    Claeys, Cor
    Proceedings paper
    2005, Science and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh Environment, 26/04/2004, p.255-260
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    Behavior of the 1/f noise and electron mobility in 65 nm FD SOI nMOSFETs employing different tensile-strain-inducing techniques

    Lukyanchikova, N.
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    Garbar, N.
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    Kudina, V.
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    Smolanka, A.
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    Simoen, Eddy  
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    Claeys, Cor
    Proceedings paper
    2007, Noise and Fluctuations: 19th International Conference, 9/09/2007, p.39-42
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    Black-gate induced noise overshoot in partially-depleted SOI MOSFETs

    Lukyanchikova, N.
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    Garbar, N.
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    Smolanka, A.
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    Simoen, Eddy  
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    Claeys, Cor
    Oral presentation
    2004, Science and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh Environment
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    Critical discussion of the front-back gate coupling effect on the low-frequency noise in fully depleted SOI MOSFETs

    Simoen, Eddy  
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    Mercha, Abdelkarim  
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    Claeys, Cor
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    Lukyanchikova, N.
    ;
    Garbar, N.
    Journal article
    2004, IEEE Trans. Electron Devices, (51) 6, p.1008-1016
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    Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs

    Put, Sofie
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    Mehta, H.
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    Collaert, Nadine  
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    Van Uffelen, M.
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    Leroux, P.
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    Claeys, Cor
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    Lukyanchikova, N.
    Journal article
    2010, Solid-State Electronics, (54) 2, p.178-184
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    Electrical characterisation of shallow cobalt-silicided junctions

    Simoen, Eddy  
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    Poyai, Amporn
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    Claeys, Cor
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    Lukyanchikova, N.
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    Petrichuk, M.
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    Garbar, N.
    Proceedings paper
    2000, 3rd International Conference Materials for Microelectronics, 16/10/2000, p.7-10
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    Electrical characterization of shallow cobalt-silicided junctions

    Simoen, Eddy  
    ;
    Poyai, Amporn
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    Claeys, Cor
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    Lukyanchikova, N.
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    Petrichuk, M.
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    Garbar, N.
    Journal article
    2001, Journal of Materials Science: Materials in Electronics, (12) 4_6, p.207-10
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    Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs

    Simoen, Eddy  
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    Claeys, Cor
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    Lukyanchikova, N.
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    Gabar, N.
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    Smolanka, A.
    Proceedings paper
    2005, Proceedings of ULIS, 7/04/2005, p.113-116
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    Evidence for a "linear kink effect" in ultra-thin gate oxide SOI MOSFETs

    Mercha, Abdelkarim  
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    Rafi, Joan Marc
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    Simoen, Eddy  
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    Claeys, Cor
    ;
    Lukyanchikova, N.
    ;
    Petrichuk, M.
    Proceedings paper
    2003, Silicon-on-Insulator Technology and Devices XI, 28/04/2003, p.319-324
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    Excess Lorentzian noise in partially-depleted SOI-nMOSFETs induced by an accumulation back gate-bias

    Lukyanchikova, N.
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    Garbar, N.
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    Smolanka, A.
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    Simoen, Eddy  
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    Claeys, Cor
    Journal article
    2004, IEEE Electron Device Letters, (25) 6, p.433-435
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    Explaining the parameters of the electron valence-band tunneling related lorentzian noise in fully depleted SOI MOSFET's

    Simoen, Eddy  
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    Mercha, Abdelkarim  
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    Rafi, Joan Marc
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    Claeys, Cor
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    Lukyanchikova, N.
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    Garbar, N.
    Journal article
    2003, IEEE Electron Device Letters, (24) 12, p.751-754
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    Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs

    Simoen, Eddy  
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    Claeys, Cor
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    Lukyanchikova, N.
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    Petrichuk, M.
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    Garbar, N.
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    Martino, Joao Antonio
    Proceedings paper
    1996, Proceedings of the 7th International Symposium on Silicon-on-Insulator Technology and Devices, 5/05/1996, p.309-317
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    Flicker noise in deep submicron nMOS transistors

    Lukyanchikova, N.
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    Garbar, N.
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    Petrichuk, M.
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    Simoen, Eddy  
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    Claeys, Cor
    Journal article
    2000, Solid-State Electronics, (44) 7, p.1239-1245
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    Flicker noise in submicron MOSFETS with 3.5 nm nitrided gate oxide

    Simoen, Eddy  
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    Da Rold, Martina
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    Claeys, Cor
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    Lukyanchikova, N.
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    Petrichuk, M.
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    Garbar, N.
    Proceedings paper
    2001, Proceedings of the 16th International Conference on Noise in Physical Systems and 1/f Fluctuations - ICNF, 22/10/2001, p.177-180
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    Identification of isolation-edge related random telegraph signals in submicron silicon metal-oxide-semiconductor transistors

    Lukyanchikova, N.
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    Petrichuk, M. V.
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    Garbar, N.
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    Simoen, Eddy  
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    Claeys, Cor
    Journal article
    1997, Applied Physics Letters, (71) 26, p.3874-3876
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    Impact of the back-gate bias on the low-frequency noise of fully depleted silicon-on-insulator MOSFETs

    Simoen, Eddy  
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    Mercha, Abdelkarim  
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    Claeys, Cor
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    Lukyanchikova, N.
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    Garbar, N.
    Proceedings paper
    2003, Proceedings of the 17th International Conference on Noise and Fluctuations - ICNF, 18/08/2003, p.321-326
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    Influence of an accumulation back-gate voltage on the low-frequency noise spectra of 0.13 μm fully-depleted SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers

    Lukyanchikova, N.
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    Garbar, N.
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    Smolanka, A.
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    Simoen, Eddy  
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    Claeys, Cor
    Proceedings paper
    2004, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 21/09/2004, p.357-360
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    Influence of the accumulation back-gate voltage on the noise spectra of deep submicron SOI MOSFET's in a wide range of drain voltages

    Kudina, V.
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    Lukyanchikova, N.
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    Garbar, N.
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    Smolanka, A.
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    Simoen, Eddy  
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    Claeys, Cor
    Journal article
    2008, Ukrainian Journal of Physics, (53) 1, p.74-79
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    Interface defects of the new type detected by the noise method in SOI and SOS MOSFETs

    Lukyanchikova, N.
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    Petrichuk, M.
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    Garbar, N.
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    Simoen, Eddy  
    ;
    Claeys, Cor
    Proceedings paper
    1997, Proceedings of the 8th International Symposium on Silicon-on-Insulator Technology and Devices, 31/08/1997, p.203-211
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