Browsing by Author "Puurunen, Riikka"
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Publication ALD High-k growth on Ge substrates
Meeting abstract2003, Atomic Layer Deposition, 4/08/2003Publication Analysis of hydroxyl group controlled atomic layer deposition of hafnium dioxide from hafnium tetrachloride and water
Puurunen, RiikkaJournal article2004-05, Journal of Applied Physics, (95) 9, p.4777-4786Publication Chlorine detection and quantification in ALCVD HfO2 high-k dielectric films using total reflection X-ray fluorescence spectrometry
Meeting abstract2003, 204th Meeting of the Electrochemical Society: 2nd Int. Symp. on High Dielectric Constant Materials, 13/10/2003Publication Correlation between the growth-per-cycle and the surface hydroxyl group concentration in the atomic layer deposition of aluminum oxide from trimethylaluminum and water
Puurunen, RiikkaJournal article2005, Applied Surface Science, (245) 1_4, p.6-10Publication Correlation between the growth-per-cycle and the surface OH group concentration in the AIMe3/H2O ALD process
Puurunen, RiikkaMeeting abstract2004, Atomic Layer Deposition Conference, 16/08/2004Publication Formation of metal oxide particles in atomic layer deposition during the chemisorption of metal chlorides: a review
Puurunen, RiikkaJournal article2005-02, Chemical Vapor Deposition, (11) 2, p.79-90Publication Grazing incidence X-ray fluorescence spectrometry for compositional analysis of nanometer-thin high-k dielectric HfO2 layers
Journal article2005-07, Analytical Sciences, (21) 7, p.845-850Publication Growth per cycle in atomic layer deposition: a theoretical model
Puurunen, RiikkaJournal article2003-10, Chemical Vapor Deposition, (9) 5, p.249-257Publication Growth per cycle in atomic layer deposition: real application examples of a theoretical model
Puurunen, RiikkaJournal article2003, Chemical Vapor Deposition, (9) 6, p.333-337Publication Hafnium oxide films by atomic layer deposition for high-k gate dielectric applications: analysis of the density of nanometer-thin films
Journal article2005, Applied Physics Letters, (86) 7, p.73116Publication Implementation of high-k gate dielectrics - a status update
Proceedings paper2003, Extended Abstracts of International Workshop on Gate Insulator - IWGI, 6/11/2003, p.10-14Publication Integration of high-k gate dielectrics - wet etch, cleaning and surface conditioning
Meeting abstract2003, 204th Meeting of the Electrochemical Society: 8th Int. Symp. on Cleaning Technology in Semiconductor Device Manufacturing, 13/10/2003Publication Integration of high-K gate dielectrics - wet etch, cleaning and surface conditioning
Proceedings paper2004, Cleaning Technology in Semiconducting Device Manufacturing VIII. Proceedings of the International Symposium, 13/10/2003, p.67-77Publication Island growth as a growth mode in atomic layer deposition: a phenomenological model
Publication Island growth in atomic layer deposition: a phenomenological model
Proceedings paper2004, Atomic Layer Deposition Conference, 16/08/2004Publication Island growth in the atomic layer deposition of zirconium oxide and aluminium oxide on hydrogen-terminated silicon: growth mode modelling and transmission electron microscopy
Journal article2004, Journal of Applied Physics, (96) 9, p.4878-4889Publication Mechanisme for the formation of metal oxide particles in ALD during the chemisorption of metal chlorides
Puurunen, RiikkaOral presentation2004, Atomic Layer Deposition ConferencePublication Random deposition as a growth mode in atomic layer deposition
Puurunen, RiikkaOral presentation2003, Atomic Layer Deposition Conference - ALDPublication Random deposition as a growth mode in atomic layer deposition
Puurunen, RiikkaJournal article2004, Chemical Vapor Deposition, (10) 3, p.159-170Publication Scaling of Hf-based gate dielectrics - integration with polysilicon gates
; ; ; ; Meeting abstract2003, 204th Meeting of the Electrochemical Society: 2nd Int. Symp. on High Dielectric Constant Materials, 13/10/2003