Browsing by Author "Rio, David"
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Publication 28nm-pitch Ru interconnects patterned with 0.33NA-EUV single exposure
Proceedings paper2021, International Conference on Extreme Ultraviolet Lithography, SEP 27-OCT 01, 2021, p.32-41Publication Compact 2D OPC modeling of a metal oxide EUV resist for a 7nm node BEOL layer
Proceedings paper2017, Extreme Ultraviolet (EUV) Lithography VIII, 26/02/2017, p.101431EPublication Design-based metrology: beyond CD/EPE metrics to evaluate printability performance
Proceedings paper2016, Metrology, Inspection, and Process Control for Microlithography XXX, 20/02/2016, p.97780WPublication Extend 0.33 NA extreme ultraviolet single patterning to pitch 28-nm metal design by low-n mask
Journal article2022-11-25, JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3, (21) 4, p.043202-1-043202-16Publication Imaging challenges in 20nm and 14nm logic nodes: hot spots performance in Metal1 layer
Proceedings paper2013, 29th European Mask and Lithography Conference, 25/06/2013, p.88860NPublication Integrated approach to improving local CD uniformity in EUV patterning
Proceedings paper2017, Extreme Ultraviolet (EUV) Lithography VIII, 26/02/2017, p.1014319Publication Logic via printability enhancement using restricted via placement and exhaustive SRAF placement on a staggered grid
Proceedings paper2022-05-26, Conference on Optical and EUV Nanolithography XXXV Part of SPIE Advanced Conference, APR 24-MAY 27, 2022, p.120510IPublication Mask Contribution to OPC Model Accuracy
Proceedings paper2020, Conference on Extreme Ultraviolet Lithography, SEP 21-25, 2020, p.115171DPublication Metal layer single EUV expose at pitch 28nm: how bright field and NTD resist advantages align
Proceedings paper2021, Conference on Extreme Ultraviolet (EUV) Lithography XII, FEB 22-26, 2021, p.116090RPublication Model calibration and validation for pre-production EUVL
; ; ; ; Publication NXE:3400 OPC Process Monitoring: Model Validity vs. Process Variability
Proceedings paper2021-02-22, Conference on Extreme Ultraviolet (EUV) Lithography XII, FEB 22-26, 2021Publication OPC resist model separability validation after SMO source change
Proceedings paper2013, Optical Microlithography XXVI, 24/02/2013, p.86831BPublication Standard cell design in N7: EUV vs. immersion
; ; ; ; Proceedings paper2015, Design-Process-Technology Co-Optimization for Manufacturability IV, 22/02/2015, p.94270EPublication Validation of imaging benefits of Dual Monopole exposures
Proceedings paper2023, International Conference on Extreme Ultraviolet Lithography, OCT 02-05, 2023, p.Art. 1275006