Browsing by Author "Schreutelkamp, Rob"
- Results Per Page
- Sort Options
Publication A systematic study of trade-offs in engineering a locally strained pMOSFET
Proceedings paper2004, Technical Digest International Electron Devices Meeting - IEDM, 13/12/2004, p.1055-1058Publication Advanced 2D/3D simulations for laser annealed device using an atomic kinetic monte carlo approach and scanning spreading resistance microscopy (SRRM)
Proceedings paper2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.539-542Publication Advanced USJ for high-k / metal gate CMOS devices
Meeting abstract2008, MRS Spring Meeting Symposium E: Doping Engineering for Front-End Processing, 24/03/2008, p.E4.7Publication Analysis of As, P diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.955-958Publication Characterizing immersion lithography micro bridge defects using advanced features of teh SEMVision G3 STAR FIB
Proceedings paper2009, 6th International Symposium on Immersion Lithography Extensions, 22/10/2009Publication Combined Delta L and series resistance extraction of LDD MOSFETs at 77K
Proceedings paper1995, Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity, 21/05/1995, p.290-296Publication Demonstration of scaled 0.099μm² FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology
Proceedings paper2009-12, IEEE International Electron Devices Meeting - IEDM, 7/12/2009, p.301-304Publication Development of ALD HfZrOx with TDEAH, TDEAZ and H2O
Proceedings paper2010, China Semiconductor Technology International Conference - CSTIC, 18/03/2010, p.699-704Publication Development of ALD HfZrOx with TDEAH/TDEAZ and H2O
Journal article2011, Journal of the Electrochemical Society, (158) 1, p.H69-H74Publication Full-field EUV and immersion lithography integration in 0.186μm² FinFET 6T-SRAM cell
Proceedings paper2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.861-864Publication Further optimization of plasma nitridation of ultra-thin oxides for 65 nm node MOSFETS
Proceedings paper2004, Advanced Short-Time Thermal Processing for Si-based CMOS Devies II, 9/05/2004, p.236-243Publication Further optimization of plasma nitridation of ultra-thin oxides for 65-nm node MOSFETS
;Kraus, P.A. ;Chua, T.C. ;Ahmed, K.Z. ;Campbell, J. ;Nouri, F. ;Cruise, J.Rothschild, AudeJournal article2004, Semiconductor Fabtech, 23, p.73-76Publication Impact of precursor chemistry on atomic layer deposition of lutetium aluminates
; ;Shi, Xiaoping; ; ; Schreutelkamp, RobJournal article2012, Journal of Vacuum Science and Technology A, (30) 1, p.01A120Publication Impact of silicidation on the excess noise behaviour of MOS transistors
Journal article1995, Solid-State Electronics, (38) 11, p.1893-1897Publication Impact of sub-melt laser annealing on Si1-xGex source/drain defectivity
Proceedings paper2007, 15th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP, 2/10/2007, p.307-315Publication Improvement of the CMOS characteristics of bulk Si FinFETs by high temperature ion implantation
; ; ; ; ;Waite, A. ;Cournoyer, J.Borniquel, J.Meeting abstract2016, IEEE International Electron Devices Meeting - IEDM, 3/12/2016, p.460-463Publication Laser annealed junctions: process integration sequence optimization for advanced CMOS technologies
Proceedings paper2007, Extended Abstracts of the 7th International Workshop on Junction Technology, 8/06/2007, p.137-140Publication Laser-annealed junctions with advanced CMOS gate stacks for 32nm node: perspectives on device performance and manufacturability
Proceedings paper2008, Symposium on VLSI Technology. Digest of Technical Papers, 17/06/2008, p.186-187Publication Layout impact on the performance of a locally strained PMOSFET
Proceedings paper2005, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2005, p.22-23