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Browsing by Author "Schreutelkamp, Rob"

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    A new method for measuring the saturation velocity of submicron CMOS transistors

    Schreutelkamp, Rob
    ;
    Deferm, Ludo  
    Journal article
    1995, Solid State Electronics, (38) 4, p.791-793
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    A systematic study of trade-offs in engineering a locally strained pMOSFET

    Nouri, Faran
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    Verheyen, Peter  
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    Washington, Lori
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    Moroz, Victor
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    De Wolf, Ingrid  
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    Kawaguchi, S.
    Proceedings paper
    2004, Technical Digest International Electron Devices Meeting - IEDM, 13/12/2004, p.1055-1058
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    Advanced 2D/3D simulations for laser annealed device using an atomic kinetic monte carlo approach and scanning spreading resistance microscopy (SRRM)

    Noda, T.
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    Eyben, Pierre  
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    Vandervorst, Wilfried  
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    Vrancken, Christa  
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    Rosseel, Erik  
    Proceedings paper
    2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.539-542
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    Advanced USJ for high-k / metal gate CMOS devices

    Absil, Philippe  
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    Ortolland, Claude
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    Aoulaiche, Marc
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    Rosseel, Erik  
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    Verheyen, Peter  
    Meeting abstract
    2008, MRS Spring Meeting Symposium E: Doping Engineering for Front-End Processing, 24/03/2008, p.E4.7
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    Analysis of As, P diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach

    Noda, Taiji
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    Vandervorst, Wilfried  
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    Felch, S.
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    Parihar, V.
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    Cuperus, Aldert
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    Mcintosh, R.
    Proceedings paper
    2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.955-958
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    Characterizing immersion lithography micro bridge defects using advanced features of teh SEMVision G3 STAR FIB

    Van Den Heuvel, Dieter  
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    Santoro, Gaetano  
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    Gronheid, Roel  
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    Braggin, Jennifer
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    Rosslee, Craig
    Proceedings paper
    2009, 6th International Symposium on Immersion Lithography Extensions, 22/10/2009
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    Combined Delta L and series resistance extraction of LDD MOSFETs at 77K

    Schreutelkamp, Rob
    ;
    Martino, Joao Antonio
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    Simoen, Eddy  
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    Deferm, Ludo  
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    Claeys, Cor
    Proceedings paper
    1995, Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity, 21/05/1995, p.290-296
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    Demonstration of scaled 0.099μm² FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology

    Veloso, Anabela  
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    Demuynck, Steven  
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    Ercken, Monique  
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    Goethals, Mieke
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    Locorotondo, Sabrina  
    Proceedings paper
    2009-12, IEEE International Electron Devices Meeting - IEDM, 7/12/2009, p.301-304
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    Development of ALD HfZrOx with TDEAH, TDEAZ and H2O

    Shi, Xiaoping
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    Tielens, Hilde  
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    Takeoka, Shinji
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    Nakabayashi, Takashi
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    Nyns, Laura  
    Proceedings paper
    2010, China Semiconductor Technology International Conference - CSTIC, 18/03/2010, p.699-704
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    Development of ALD HfZrOx with TDEAH/TDEAZ and H2O

    Shi, Xiaoping
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    Tielens, Hilde  
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    Takeoka, Shinji
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    Nakabayashi, Takashi
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    Nyns, Laura  
    Journal article
    2011, Journal of the Electrochemical Society, (158) 1, p.H69-H74
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    Full-field EUV and immersion lithography integration in 0.186μm² FinFET 6T-SRAM cell

    Veloso, Anabela  
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    Demuynck, Steven  
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    Ercken, Monique  
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    Goethals, Mieke
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    Demand, Marc  
    Proceedings paper
    2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.861-864
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    Further optimization of plasma nitridation of ultra-thin oxides for 65 nm node MOSFETS

    Kraus, Philip
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    Chua, Tai Chen
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    Rothschild, Aude
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    Cubaynes, Florence
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    Veloso, Anabela  
    Proceedings paper
    2004, Advanced Short-Time Thermal Processing for Si-based CMOS Devies II, 9/05/2004, p.236-243
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    Further optimization of plasma nitridation of ultra-thin oxides for 65-nm node MOSFETS

    Kraus, P.A.
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    Chua, T.C.
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    Ahmed, K.Z.
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    Campbell, J.
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    Nouri, F.
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    Cruise, J.
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    Rothschild, Aude
    Journal article
    2004, Semiconductor Fabtech, 23, p.73-76
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    Impact of precursor chemistry on atomic layer deposition of lutetium aluminates

    Nyns, Laura  
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    Shi, Xiaoping
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    Tielens, Hilde  
    ;
    Van Elshocht, Sven  
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    Date, Lucien  
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    Schreutelkamp, Rob
    Journal article
    2012, Journal of Vacuum Science and Technology A, (30) 1, p.01A120
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    Impact of silicidation on the excess noise behaviour of MOS transistors

    Vandamme, Ewout
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    Vandamme, L.K.J.
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    Claeys, Cor
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    Simoen, Eddy  
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    Schreutelkamp, Rob
    Journal article
    1995, Solid-State Electronics, (38) 11, p.1893-1897
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    Impact of sub-melt laser annealing on Si1-xGex source/drain defectivity

    Rosseel, Erik  
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    Lu, J.P
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    Hikavyy, Andriy  
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    Verheyen, Peter  
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    Hoffmann, Thomas Y.
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    Richard, Olivier  
    Proceedings paper
    2007, 15th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP, 2/10/2007, p.307-315
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    Improvement of the CMOS characteristics of bulk Si FinFETs by high temperature ion implantation

    Kikuchi, Yoshiaki  
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    Hopf, Toby  
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    Mannaert, Geert  
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    Tao, Zheng  
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    Waite, A.
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    Cournoyer, J.
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    Borniquel, J.
    Meeting abstract
    2016, IEEE International Electron Devices Meeting - IEDM, 3/12/2016, p.460-463
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    Laser annealed junctions: process integration sequence optimization for advanced CMOS technologies

    Hoffmann, Thomas Y.
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    Noda, Taiji
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    Felch, S.
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    Severi, Simone  
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    Parihar, V.
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    Forstner, H.
    Proceedings paper
    2007, Extended Abstracts of the 7th International Workshop on Junction Technology, 8/06/2007, p.137-140
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    Laser-annealed junctions with advanced CMOS gate stacks for 32nm node: perspectives on device performance and manufacturability

    Ortolland, Claude
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    Noda, Taiji
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    Chiarella, Thomas  
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    Kubicek, Stefan  
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    Kerner, Christoph  
    Proceedings paper
    2008, Symposium on VLSI Technology. Digest of Technical Papers, 17/06/2008, p.186-187
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    Layout impact on the performance of a locally strained PMOSFET

    Eneman, Geert  
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    Verheyen, Peter  
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    Rooyackers, Rita
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    Nouri, Faran
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    Washington, Lori
    Proceedings paper
    2005, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2005, p.22-23
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