Browsing by Author "Shi, Xiaoping"
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Publication 15nm half-pitch patterning: EUV + SELF-aligned double patterning
Oral presentation2012, International Symposium on Extreme Ultraviolet Lithography - EUVLPublication 15nm HP patterning with EUV and SADP: key contributors for improvement of LWR, LER, and CDU
Proceedings paper2013, Advanced Etch Technology for Nanopatterning II, 23/02/2013, p.86850CPublication Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT
Proceedings paper2007, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2007, p.198-199Publication Atomic layer deposition of Gd-doped HfO2 thin films
Journal article2010, Journal of the Electrochemical Society, (157) 4, p.G105-G110Publication Atomic layer deposition of GdHfOx thin films
Proceedings paper2009, Atomic Layer Deposition Applications 5, 4/10/2009, p.243-251Publication CMP-less integration of fully Ni-silicided metal gates in FinFETs by simultaneous silicidation of the source, drain, and the gate using a novel dual hard mask approach
Proceedings paper2005, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2005, p.198-199Publication Compatibility of polysilicon with HfO2-based gate dielectrics for CMOS applications
Proceedings paper2003, ULSI Process Integration III, 28/04/2003, p.391-396Publication Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
Proceedings paper2016, IEEE Symposium on VLSI Technology, 13/06/2016, p.42-43Publication Demonstration of Ni fully GermanoSilicide as a pFET gate electrode candidate on HfSiON
Proceedings paper2005, Technical Digest International Electron Devices Meeting (IEDM), 5/12/2005, p.27/05/2001-27/05/2004Publication Deposition of Poly-SiGe with RTCVD
Proceedings paper2005-10, The 8th Technical and Scientific Meeting of CREMSI:FEOL from 130 to 65 nm : scaling challenges, 20/10/2005Publication Deposition of undoped and in-situ doped amorphous and polycrystalline silicon with LPCVD
; Shi, XiaopingProceedings paper2005, 15th European Conference on Chemical Vapor Deposition - EUROCVD-15, 4/09/2005, p.652-658Publication Development of ALD HfZrOx with TDEAH, TDEAZ and H2O
Proceedings paper2010, China Semiconductor Technology International Conference - CSTIC, 18/03/2010, p.699-704Publication Development of ALD HfZrOx with TDEAH/TDEAZ and H2O
Journal article2011, Journal of the Electrochemical Society, (158) 1, p.H69-H74Publication Electrical characterization of the metal-vanadium dioxide interface and implications for memory applications
Oral presentation2011, 1st International Workshop on Resistive RAMPublication Electrical characterization of the metal-vanadium dioxide interface and vanadium dioxide work function
Proceedings paper2011, IEEE Semiconductor Interface Specialist Conference - SISC, 1/12/2011Publication Electrical properties of vanadium dioxide – dielectric – metal structures and the metal-insulator transition
Meeting abstract2012, APS March Meeting, 27/02/2012, p.J16.012Publication Electrical properties of vanadium dioxide devices for micro-electronic applications making use of metal-insulator phase transitions
; ; ; ; Publication Evaluation of DiMethylAminoGermaniumTriChloride as a novel carbon-dopant and germanium precursor for germanium and silicon germanium chemical vapor deposition
Proceedings paper2008, SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices, 13/10/2008, p.159-162Publication Evaluation of DiMethylAminoGermaniumTriChloride as a novel carbon-dopant and germanium precursor for germanium and silicon germanium chemical vapor deposition
Meeting abstract2008, 214th ECS Meeting, 12/10/2008, p.2386Publication Highly scalable effective work function engineering approach for multi-VT modulation of planar and FinFET-based RMG high-k last devies for (sub-)22nm nodes
Proceedings paper2013, Symposium on VLSI Technology, 11/06/2013, p.T194-T195
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