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Browsing by Author "Soulie, Jean-Philippe"

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    A Novel Ni-Al Alloy Metal Induced Lateral Crystallization Process for Improved Channel Conduction in 3-D NAND Flash

    Ramesh, Siva  
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    Banerjee, Kaustuv  
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    Opsomer, Karl  
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    Rachita, Iuliana  
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    Bastos, Joao  
    Journal article
    2022, IEEE ELECTRON DEVICE LETTERS, (43) 12, p.2085-2088
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    Al3Sc thin films as alternative interconnect metallization

    Soulie, Jean-Philippe
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    Adelmann, Christoph  
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    Swerts, Johan  
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    Tokei, Zsolt  
    Oral presentation
    2022-03-28, MAM 2022
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    Al3Sc thin films for advanced interconnect applications

    Soulie, Jean-Philippe
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    Sankaran, Kiroubanand  
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    Founta, Valeria  
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    Opsomer, Karl  
    Journal article
    2024, MICROELECTRONIC ENGINEERING, (286) 1 March, p.Art. 112141
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    Aluminide intermetallics for advanced interconnect metallization: thin film studies

    Soulie, Jean-Philippe
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    Tokei, Zsolt  
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    Swerts, Johan  
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    Adelmann, Christoph  
    Proceedings paper
    2021, IEEE International Interconnect Technology Conference (IITC), JUL 06-09, 2021
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    Buried Power Rail Metal exploration towards the 1 nm Node

    Gupta, Anshul  
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    Radisic, Dunja  
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    Maes, J.W.
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    Varela Pedreira, Olalla  
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    Soulie, Jean-Philippe
    Proceedings paper
    2021, IEEE International Electron Devices Meeting (IEDM), DEC 11-16, 2021
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    Determination of optical constants of thin films in the EUV

    Ciesielski, Richard
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    Saadeh, Qais
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    Philipsen, Vicky  
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    Opsomer, Karl  
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    Soulie, Jean-Philippe
    Journal article
    2022, APPLIED OPTICS, (61) 8, p.2060-2078
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    Directional Etching of Barrierless NiAl Lines on 300-mm Wafers for Interconnects Applications

    Kundu, Souvik  
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    Soulie, Jean-Philippe
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    Marti, Giulio  
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    Ulu Okudur, Fulya  
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    Kundu, Shreya  
    Journal article
    2024, IEEE ELECTRON DEVICE LETTERS, (45) 10, p.2033-2035
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    Electronic stopping cross section for He in Ru, derived from RBS spectra

    Meersschaut, Johan  
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    Meersschaut, Simon  
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    Soulie, Jean-Philippe
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    Heller, Rene
    Journal article
    2024, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, (553) August, p.Art. 165406
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    Epitaxial growth of magnetron sputtered NiAl on Ge mediated by native GeOx

    Ben Chroud, Mohamed  
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    Korytov, Maxim  
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    Soulie, Jean-Philippe
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    Adelmann, Christoph  
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    Swerts, Johan  
    Journal article
    2024, JOURNAL OF PHYSICS D-APPLIED PHYSICS, (57) 13, p.Art. 135309
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    Erase behavior of charge trap flash memory devices using high-k dielectric as blocking oxide liner

    Ramesh, Siva  
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    Ajaykumar, Arjun  
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    Bastos, Joao  
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    Breuil, Laurent  
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    Arreghini, Antonio  
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    Nyns, Laura  
    Meeting abstract
    2020, 51st IEEE Semiconductor Interface Specialists Conference - SISC, 16/12/2020, p.13.4
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    First demonstration of ruthenium and molybdenum word lines integrated into 40nm ptch 3D NAND memory devices

    Ajaykumar, Arjun  
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    Breuil, Laurent  
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    Katcko, Kostantine  
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    Schleicher, Filip  
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    Sebaai, Farid  
    Proceedings paper
    2021, 2021 Symposium on VLSI Technology, 13/06/2021
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    Improved resistivity of NiAl thin films at low temperature for advanced interconnect metallization

    Soulie, Jean-Philippe
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    Tokei, Zsolt  
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    Swerts, Johan  
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    Adelmann, Christoph  
    Proceedings paper
    2022-06, 2022 IEEE International Interconnect Technology Conference (IITC), June 2022, p.73-75
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    Inflection points in interconnect research and trends for 2nm and beyond in order to solve the RC bottleneck

    Tokei, Zsolt  
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    Vega Gonzalez, Victor  
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    Murdoch, Gayle  
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    O'Toole, Martin  
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    Croes, Kristof  
    Proceedings paper
    2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020
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    Intermetallic Compounds as Alternatives to Copper for Advanced Interconnect Metallization

    Adelmann, Christoph  
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    Soulie, Jean-Philippe
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    Scheerder, Jeroen  
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    Fleischmann, Claudia  
    Proceedings paper
    2023, IEEE International Interconnect Technology Conference (IITC) / IEEE Materials for Advanced Metallization Conference (MAM), MAY 22-25, 2023
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    Investigation of Graphene Cap Formation on NiAl by Low Temperature Thermal CVD

    Temmyo, Yumehito
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    Soulie, Jean-Philippe
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    Adelmann, Christoph  
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    Tokei, Zsolt  
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    Ueno, Kazuyoshi
    Proceedings paper
    2024, 2024 International Interconnect Technology Conference, JUN 03-06, 2024
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    Mask absorber for next generation EUV lithography

    Wu, Meiyi  
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    Thakare, Devesh  
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    De Marneffe, Jean-Francois
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    Jaenen, Patrick  
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    Souriau, Laurent  
    Proceedings paper
    2020, Conference on Extreme Ultraviolet Lithography, SEP 21-25, 2020
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    Optical constants for EUV scatterometry

    Ciesielski, Richard
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    Saadeh, Qais
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    Naujok, Philipp
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    Opsomer, Karl  
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    Soulie, Jean-Philippe
    Proceedings paper
    2021, Modeling Aspects in Optical Metrology VII, 21/06/2021, p.117830M
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    Properties of NbxTi(1-x)N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits

    Perez Lozano, Daniel  
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    Soulie, Jean-Philippe
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    Hodges, Blake  
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    Piao, Xiaoyu  
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    O'Neal, Sabine  
    Journal article
    2024, SUPERCONDUCTOR SCIENCE & TECHNOLOGY, (37) 7, p.Art. 075012
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    Reduced resistivity of NiAl by backthinning for advanced interconnect metallization

    Soulie, Jean-Philippe
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    Tokei, Zsolt  
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    Heylen, Nancy  
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    Adelmann, Christoph  
    Proceedings paper
    2023, IEEE International Interconnect Technology Conference (IITC) / IEEE Materials for Advanced Metallization Conference (MAM), MAY 22-25, 2023
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    Resolving nanoscale composition fluctuations and defects in advanced interconnects: a crucial step to comprehend thin film resistivity.

    Fleischmann, Claudia  
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    Uedono, Akira
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    Scheerder, Jeroen  
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    Soulie, Jean-Philippe
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    Park, Seongho  
    Proceedings paper
    2024, 2024 International Interconnect Technology Conference, JUN 03-06, 2024
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