Browsing by Author "Subirats, Alexandre"

A new method for quickly evaluating reversible and permanent components of the BTI degradation

Challenges for I/O towards the 3-nm node: Si/SiGe superlatttice I/O finFET in a horizontal nanowire technology and the increased ausceptibility of bulk finFET technology to single event latchup

Channel and gate stack charge trapping investigation in vertical 3D NAND devices with poly-silicon channel

Channel and near channel defects characterization in vertical InxGa1-xAs high mobility channels for future 3D NAND memory

Comparative experimental analysis of time-dependent variability using a transistor test array

COMPHY - A compact-physics framework for unified modeling of BTI

Defect-centric perspective of combined BTI and RTN time-dependent variability

Demonstration of sufficient BTI reliability for a 14-nm FinFET 1.8V I/O technology featuring a thick ALD SiO2 IL and Ge p-channel

Efficient physical defect model applied to PBTI in high-k stacks

Electrical characterization of BEOL plasma-induced damage in bulk FinFET technology

Experimental and theoretical verification of channel conductivity degradation due to grain boundaries and defects in 3D NAND

Feasibility of InxGa1-xAs high mobility channel for 3-D NAND memory

First demonstration of SiGe channel in Macaroni geometry for future 3D NAND devices

Gate stack thermal stability and PBTI reliability challenges for 3D sequential integration: demonstration of a suitable gate stack for top and bottom tier nMOS

Hot-carrier analysis on nMOS Si finFETs with solid source doped junctions

Impact of discrete trapping in high pressure deuterium annealed and doped poly-Si channel 3D NAND macaroni

Impact of SiON tunnel layer composition on 3D NAND cell performance

Impact of the electronic band structure on the reliability of triple Layer a-VMCO devices

In depth analysis of post-program VT instability after electrical stress in 3D SONOS memories

Investigation of the endurance of FE-HfO2 devices by means of TDDB studies