Browsing by Author "Trojman, Lionel"

A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination

A defect-centric perspective on channel hot carrier variability in nMOSFETs

Advanced electrical characterization toward (sub) 1nm EOT HfSiON – hole trapping in PFET and L-dependent effects

Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility

Charge carrier mobility for advanced high-k/metal gate MOSFET in CMOS technology. An experimental study

Defect-centric distribution of channel hot carrier degradation in nano-MOSFETs

Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices

Effectiveness of nitridation of hafnium silicate dielectrics: a comparison between thermal and plasma nitridation

Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

Fundamentals and extraction of velocity saturation in sub-100nm (110)-Si and (100)-Ge

High Performing 8 Å EOT HfO2 / TaN Low Thermal-Budget n-channel FETs with Solid-Phase Epitaxially Regrown (SPER) Junctions

High-field transport investigation for 25-nm MOSFETs with 0.64nm EOT: intrinsic performance and parasitic effects

High-k characterization by RFCV

High-k metal gate MOSFETs: Impact of extrinsic process condition on the gate-stack quality. A mobility study

Influence of GaN- and Si3N4- passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination

Line width dependent mobility in high-k – a comparative performance study between FUSI and TiN

Mobility and dielectric quality of 1-nm EOT HfSiON on Si(110) and (100)

Mobility extraction using RFCV for 80nm MOSFET with 1nm EOT HfSiON/TiN

Mobility improvement study for 8-Å-EOT HfO2 UTBB-FD-SOI-MOSFET based on the direct extraction of the back channel mobility

Nitrogen incorporation in HfSiO(N)/TaN gate stacks: impact on performances and NBTI