Browsing by Author "Wang, Xin Peng"
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Publication 0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications
Proceedings paper2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.929-632Publication A fast and reliable method used to investigate the size-dependent retention lifetime of a phase-change line cell
Journal article2011, Solid-State Electronics, (58) 1, p.17-22Publication A novel method for extracting the temperature-dependent crystal-growth parameters in fast-growth phase-change memories
Journal article2010, IEEE Electron Device Letters, (31) 11, p.1287-1289Publication Alternative high-k dielectrics for semiconductor applications
Journal article2009, Journal of Vacuum Science and Technology B, (27) 1, p.209-213Publication Alternative high-k dielectrics for semiconductor applications
Oral presentation2008, 15th Workshop on Dielectrics in Microelectronics - WODIMPublication Atomic layer deposition of hafnium titanates dielectric layers
Proceedings paper2008, 8th International Conference on Atomic Layer Deposition - ALD, 29/06/2008Publication Bipolar switching characteristics and scalability in NiO layers made by thermal oxidation of Ni
Journal article2010, Journal of the Electrochemical Society, (157) 8, p.G187-G192Publication Crystallization study of thin ZrO2 ALD films on Al203 and on TiN for DRAM MIMCAP applications
Publication Effect of anodic interface layers on the unipolar switching of HfO2-based resistive RAM
Proceedings paper2010, International Symposium on VLSI Technology Systems and Applications - VLSI-TSA, 26/04/2010, p.140-141Publication Effect of deposition and anneal temperature on batch-ALD deposited ZrO2/Al2O3/ZrO2 films for DRAM MIM capacitor applications
Publication Electrical properties of low-VT metal-gated n-MOSFETs using La2O3/SiOx as interfacial layer between HfLaO high-k dielectrics and Si channel
Journal article2008-05, IEEE Electron Device Letters, (29) 5, p.430-433Publication Extraction of the retention properties of a phase-change cell from temperature-ramp tests using a novel method
Proceedings paper2010, IEEE International Memory Workshop - IMW, 16/05/2010, p.33-36Publication Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized Plasma Enhanced Atomic Layer Deposition (PEALD) process for TiN electrode
Proceedings paper2011, IEEE International Interconnect Technology Conference and Materials for Advanced Metallization - IITC/MAM, 8/05/2011, p.7.3Publication High-k dielectrics and metal gates for future generation memory devices
; ; ; Wang, Xin PengMeeting abstract2009, 215th ECS Meeting, 24/05/2009, p.690Publication High-k dielectrics and metal gates for future generation memory devices
; ; ; Wang, Xin PengProceedings paper2009, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-based CMOS. 5: New Materials, Processing, and Equipment, 24/05/2009, p.29-40Publication High-k dielectrics for future generation memory devices
; ; ; Wang, Xin PengJournal article2009, Microelectronic Engineering, (86) 7_9, p.1789-1795Publication Influence of process parameters on low current resistive switching in MOCVD and ALD NiO Films
Proceedings paper2011, New Functional Materials and Emerging Device Architectures for Nonvolatile Memories, 25/04/2011, p.1337-q07-09Publication Low VT metal-gate/high-k nMOSFETs - PBTI dependence and VT tune-ability on La/Dy-capping layer locations and laser annealing conditions
Publication Metal-organic chemical vapor deposition of Ti-doped NiO layers for application in resistive switching memories
Proceedings paper2010, Physics and Technology of High-k Materials 8, 10/10/2010, p.313-322Publication MOCVD of NiO thin films using Ni(dmamb)2
Meeting abstract2010, 218th ECS Meeting, 10/10/2010, p.1515