Browsing by Author "Young, Edward"
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Publication Alternative gate insulator materials for future generation MOSFETs
Oral presentation2001, International Forum on Semiconductor Technology - IFST; 7-8 March 2001; Antwerpen, Belgium.Publication Characterisation of AlCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties
Journal article2002, Journal of Non-Crystalline Solids, (303) 1, p.123-133Publication Characterisation of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
Journal article2002, Journal of Non-Crystalline Solids, (303) 1, p.83-87Publication Characterization of ALCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties
Oral presentation2001, Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.Publication Characterization of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
Oral presentation2001, Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.Publication Comparison of sub 1 nm TiN/HfO2 with Poly-Si/HfO2 gate stacks u sing scaled chemical oxide interfaces
Proceedings paper2003, Symposium on VLSI Technology. Digest of Technical Papers, 10/06/2003, p.21-22Publication Crystallization behaviour of ZrO2/Al2O3-based high-k gate stacks
Oral presentation2001, Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.Publication Effect of Al-content and post deposition annealing on the electrical properties of ultra-thin HfAlxOy layers
; ; Zhao, ChaoProceedings paper2003, Novel Materials and Processes for Advanced CMOS, 2/12/2002, p.35-40Publication Electrical characterization of high-k materials prepared by Atomic Layer CVD (ALCVD)
Proceedings paper2001, Extended Abstracts of the International Workshop on Gate Insulator. IWGI 2001; 1-2 November 2001; Tokyo, Japan., p.94-99Publication High temperature grazing incidence XRD study on in-situ crystallization in ultra-thin oxide films
Oral presentation2000, 11th Workshop on Dielectrics in Microelectronics; 13-15 November 2000; Munich, Germany.Publication Implementation of high-k gate dielectrics - a status update
Proceedings paper2003, Extended Abstracts of International Workshop on Gate Insulator - IWGI, 6/11/2003, p.10-14Publication In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction
Journal article2001, Microelectronics Reliability, (41) 7, p.995-998Publication In-line electrical metrology for high-k gate dielectrics deposited by atomic layer CVD
Journal article2003, Journal of the Electrochemical Society, (150) 9, p.F169-F172Publication In-line electrical metrology for high-k gate dielectrics deposited by atomic layer CVD
Meeting abstract2002, 201st Meeting of the Electrochemical Society. Rapid Thermal and Other Short Time Processing Technologies III, 12/05/2002, p.719Publication Infrared interface analysis of high-k dielectrics deposited by atomic layer chemical vapour deposition
Proceedings paper2001, Extended Abstracts of the International Workshop on Gate Insulator - IWGI, 1/11/2001, p.226-229Publication Integration issues of polysilicon with high k dielectrics deposited by Atomic Layer Chemical Vapor Deposition
Proceedings paper2002, Semiconductor Silicon 2002. Proceedings of the 9th International Symposium on Silicon Materials Science and Technology, 12/05/2002, p.747-760Publication Interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition
Oral presentation2001, IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference onPublication Issues, achievements and challenges towards integration of high-k dielectrics
Proceedings paper2002, Frontiers in Electronics. Future Chips. Proceedings of the 2002 Workshop, 6/01/2002, p.?-?Publication Issues, achievements and challenges towards intergration of high-k dielectrics
Proceedings paper2002, 5th International Forum on Semiconductor Technology - IFST, 21/02/2002Publication Low-frequency noise study of n-MOSFETs with HfO2 gate dielectric
Meeting abstract2003, 204th Meeting of the Electrochemical Society: 2nd Int. Symp. on High Dielectric Constant Materials, 12/10/2003