Browsing by Author "Zhao, Chao"
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Publication 3D stacked IC demonstration using a through silicon via first approach
Proceedings paper2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.603-606Publication A DRAM compatible Cu contact using self-aligned Ta-silicide and Ta-barrier
Journal article2008, Microelectronic Engineering, (85) 10, p.2009-2012Publication A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/AC NBTI Stress/Recovery Condition in Si p-FinFETs
Proceedings paper2021, IEEE International Reliability Physics Symposium (IRPS), MAR 21-24, 2021Publication A microstructural study of the thermal stability of atomic layer deposited Al2O3 thin films
Proceedings paper2003-04, Microscopy of Semiconducting Materials 2003, 31/03/2003, p.397-400Publication ALD HfO2 surface preparation study
Proceedings paper2003, Novel Materials and Processes for Advanced CMOS, 2/12/2002, p.179-184Publication ALD High-k growth on Ge substrates
Meeting abstract2003, Atomic Layer Deposition, 4/08/2003Publication Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization
Journal article2021, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, p.229-235Publication Alternative gate insulator materials for future generation MOSFETs
Oral presentation2001, International Forum on Semiconductor Technology - IFST; 7-8 March 2001; Antwerpen, Belgium.Publication Application of x-ray fluorescence spectrometry in charaterization of high-k uktra-thin films
;Zhao, Chao ;Brijs, Bert ;Dortu, Fabian; ; ; Besling, W.Proceedings paper2003, Analytical Techniques for Semiconductor Materials and Processes, 27/04/2003, p.243-250Publication Atomic layer deposition of hafnium oxide on germanium substrates
Journal article2005, J. Applied Physics, (97) 6, p.64104Publication Atomic layer deposition of Ru and RuO2 for MIMCAP applications
Meeting abstract2009, 216th ECS Meeting, 4/10/2009, p.2052Publication Atomic layer deposition of Ru and RuO2 for MIMCAP applications
Proceedings paper2009, Atomic Layer Deposition Applications 5, 4/10/2009, p.377-387Publication Band alignment at the interface of (100)Si with HfxTa1-xOy high-k dielectric layers
Journal article2005, Applied Physics Letters, (86) 7, p.072108-1-072108-3Publication Band alignment between (100)Si and complex rare earth/transition metal oxides
Journal article2004, Applied Physics Letters, (85) 24, p.5917-5919Publication Band alignment between (100)Si and complex rare-earth/transition metal oxides
; ; ;Zhao, Chao; ;Heeg, ;Schubert, ;Jia, Y.Schlom, D.Oral presentation2004, 35th IEEE Semiconductor Interface Specialists ConferencePublication Band alignment between (100)Si and Hf-based complex metal oxides
Journal article2005, Microelectronic Engineering, (80) 80, p.102-105Publication Barrier reliability for Cu contacts
Proceedings paper2007, Advanced Semiconductor Technology Symposium, 18/10/2007Publication Bulk properties of MOCVD-deposited HfO2 layers for high-k dielectric applications
Journal article2004, Journal of the Electrochemical Society, (151) 10, p.F228-F234Publication Characterisation of AlCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties
Journal article2002, Journal of Non-Crystalline Solids, (303) 1, p.123-133Publication Characterisation of ALCVD ZrO2 thin films by TEM
Proceedings paper2001, Microscopy of Semiconducting Materials - MSMXII, 25/03/2001, p.407-410