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Browsing by Author "Zhao, Chao"

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    3D stacked IC demonstration using a through silicon via first approach

    Van Olmen, Jan  
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    Mercha, Abdelkarim  
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    Katti, Guruprasad
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    Huyghebaert, Cedric  
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    Van Aelst, Joke  
    Proceedings paper
    2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.603-606
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    A DRAM compatible Cu contact using self-aligned Ta-silicide and Ta-barrier

    Zhao, Chao
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    Ahn, Jae Young
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    Horiguchi, Naoto  
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    Demuynck, Steven  
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    Tokei, Zsolt  
    Journal article
    2008, Microelectronic Engineering, (85) 10, p.2009-2012
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    A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/AC NBTI Stress/Recovery Condition in Si p-FinFETs

    Zhou, Longda
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    Zhang, Zhaohao
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    Yang, Hong
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    Ji, Zhigang
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    Liu, Qianqian
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    Zhang, Qingzhu
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    Simoen, Eddy  
    Proceedings paper
    2021, IEEE International Reliability Physics Symposium (IRPS), MAR 21-24, 2021
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    A microstructural study of the thermal stability of atomic layer deposited Al2O3 thin films

    Nistor, L.
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    Richard, Olivier  
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    Zhao, Chao
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    Bender, Hugo  
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    Stesmans, Andre  
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    Van Tendeloo, G.
    Proceedings paper
    2003-04, Microscopy of Semiconducting Materials 2003, 31/03/2003, p.397-400
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    ALD HfO2 surface preparation study

    Delabie, Annelies  
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    Caymax, Matty  
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    Maes, Jan  
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    Bajolet, Philippe
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    Brijs, Bert
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    Cartier, Eduard
    Proceedings paper
    2003, Novel Materials and Processes for Advanced CMOS, 2/12/2002, p.179-184
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    ALD High-k growth on Ge substrates

    Delabie, Annelies  
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    Brijs, Bert
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    Caymax, Matty  
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    Chiarella, Thomas  
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    Conard, Thierry  
    Meeting abstract
    2003, Atomic Layer Deposition, 4/08/2003
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    Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization

    Zhou, Longda
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    Liu, Qianqian
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    Yang, Hong
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    Ji, Zhigang
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    Xu, Hao
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    Wang, Guilei
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    Simoen, Eddy  
    Journal article
    2021, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, p.229-235
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    Alternative gate insulator materials for future generation MOSFETs

    Heyns, Marc  
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    Bender, Hugo  
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    Carter, Richard
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    Caymax, Matty  
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    Conard, Thierry  
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    De Gendt, Stefan  
    Oral presentation
    2001, International Forum on Semiconductor Technology - IFST; 7-8 March 2001; Antwerpen, Belgium.
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    Application of x-ray fluorescence spectrometry in charaterization of high-k uktra-thin films

    Zhao, Chao
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    Brijs, Bert
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    Dortu, Fabian
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    De Gendt, Stefan  
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    Caymax, Matty  
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    Heyns, Marc  
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    Besling, W.
    Proceedings paper
    2003, Analytical Techniques for Semiconductor Materials and Processes, 27/04/2003, p.243-250
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    Atomic layer deposition of hafnium oxide on germanium substrates

    Delabie, Annelies  
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    Puurunen, R.
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    Brijs, Bert
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    Caymax, Matty  
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    Conard, Thierry  
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    Onsia, Bart  
    Journal article
    2005, J. Applied Physics, (97) 6, p.64104
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    Atomic layer deposition of Ru and RuO2 for MIMCAP applications

    Zhao, Chao
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    Pawlak, Malgorzata
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    Schaekers, Marc  
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    Sleeckx, Erik  
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    Vancoille, Eric  
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    Wouters, Dirk
    Meeting abstract
    2009, 216th ECS Meeting, 4/10/2009, p.2052
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    Atomic layer deposition of Ru and RuO2 for MIMCAP applications

    Zhao, Chao
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    Pawlak, Malgorzata
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    Popovici, Mihaela Ioana  
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    Schaekers, Marc  
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    Sleeckx, Erik  
    Proceedings paper
    2009, Atomic Layer Deposition Applications 5, 4/10/2009, p.377-387
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    Band alignment at the interface of (100)Si with HfxTa1-xOy high-k dielectric layers

    Afanasiev, Valeri  
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    Stesmans, Andre  
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    Zhao, Chao
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    Caymax, Matty  
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    Rittersma, Z.M.
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    Maes, Jan  
    Journal article
    2005, Applied Physics Letters, (86) 7, p.072108-1-072108-3
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    Band alignment between (100)Si and complex rare earth/transition metal oxides

    Afanasiev, Valeri  
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    Stesmans, Andre  
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    Zhao, Chao
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    Caymax, Matty  
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    Heeg, T.
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    Schubert, J.
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    Jia, Y.
    Journal article
    2004, Applied Physics Letters, (85) 24, p.5917-5919
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    Band alignment between (100)Si and complex rare-earth/transition metal oxides

    Afanasiev, Valeri  
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    Stesmans, Andre  
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    Zhao, Chao
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    Caymax, Matty  
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    Heeg,
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    Schubert,
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    Jia, Y.
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    Schlom, D.
    Oral presentation
    2004, 35th IEEE Semiconductor Interface Specialists Conference
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    Band alignment between (100)Si and Hf-based complex metal oxides

    Afanasiev, Valeri  
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    Stesmans, Andre  
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    Zhao, Chao
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    Caymax, Matty  
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    Rittersma, Z.M.
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    Maes, Jan  
    Journal article
    2005, Microelectronic Engineering, (80) 80, p.102-105
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    Barrier reliability for Cu contacts

    Zhao, Chao
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    Demuynck, Steven  
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    Van den Bosch, Geert  
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    Tokei, Zsolt  
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    Beyer, Gerald  
    Proceedings paper
    2007, Advanced Semiconductor Technology Symposium, 18/10/2007
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    Bulk properties of MOCVD-deposited HfO2 layers for high-k dielectric applications

    Van Elshocht, Sven  
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    Baklanov, Mikhaïl
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    Brijs, Bert
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    Carter, R.
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    Caymax, Matty  
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    Carbonell, Laure
    Journal article
    2004, Journal of the Electrochemical Society, (151) 10, p.F228-F234
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    Characterisation of AlCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties

    Besling, Wim
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    Young, Edward
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    Conard, Thierry  
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    Zhao, Chao
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    Carter, Richard
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    Vandervorst, Wilfried  
    Journal article
    2002, Journal of Non-Crystalline Solids, (303) 1, p.123-133
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    Characterisation of ALCVD ZrO2 thin films by TEM

    Richard, Olivier  
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    Bender, Hugo  
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    Houssa, Michel  
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    Zhao, Chao
    Proceedings paper
    2001, Microscopy of Semiconducting Materials - MSMXII, 25/03/2001, p.407-410
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