Browsing by author "Richard, Olivier"
Now showing items 1-20 of 370
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10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Govoreanu, Bogdan; Kar, Gouri Sankar; Chen, Yangyin; Paraschiv, Vasile; Kubicek, Stefan; Fantini, Andrea; Radu, Iuliana; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Jossart, Nico; Richard, Olivier; Vandeweyer, Tom; Seo, Kyungah; Hendrickx, Paul; Pourtois, Geoffrey; Bender, Hugo; Altimime, Laith; Wouters, Dirk; Kittl, Jorge; Jurczak, Gosia (2011) -
15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process
Mitard, Jerome; Witters, Liesbeth; Loo, Roger; Lee, Seung Hun; Sun, J.W.; Franco, Jacopo; Ragnarsson, Lars-Ake; Brand, A.; Lu, X.; Yoshido, N.; Eneman, Geert; Brunco, David; Vorderwestner, M.; Storck, P.; Milenin, Alexey; Hikavyy, Andriy; Waldron, Niamh; Favia, Paola; Vanhaeren, Danielle; Vanderheyden, Annelies; Richard, Olivier; Mertens, Hans; Arimura, Hiroaki; Sioncke, Sonja; Vrancken, Christa; Bender, Hugo; Eyben, Pierre; Barla, Kathy; Lee, Sun Ghil; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2014) -
3D characterization of nanowire devices with STEM based modes
Bender, Hugo; Bosch, Eric G.T.; Richard, Olivier; Mendez, David; Favia, Paola; Lazic, Ivan (2019) -
3D imaging of Si FinFETs by combined HAADF-STEM and EDS tomography
Qiu, Yang; Van Marcke, Patricia; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried (2014) -
3D-analysis of semiconductor structures by electron tomography
Bender, Hugo; Richard, Olivier; Kalio, Andre; Sourty, Erwan (2007) -
3D-carrier profiling and parasitic resistance analysis in vertically stacked gate-all-around Si nanowire CMOS transistors
Eyben, Pierre; Ritzenthaler, Romain; De Keersgieter, An; Chiarella, Thomas; Veloso, Anabela; Mertens, Hans; Pena, Vanessa; Santoro, Gaetano; Machillot, Jerome; Kim, Myungsun; Miyashita, Toshihiko; Yoshida, Naomi; Bender, Hugo; Richard, Olivier; Celano, Umberto; Paredis, Kristof; Wouters, Lennaert; Mitard, Jerome; Horiguchi, Naoto (2019) -
45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm
Henson, Kirklen; Lander, Rob; Demand, Marc; Dachs, Charles; Kaczer, Ben; Deweerd, Wim; Schram, Tom; Tokei, Zsolt; Hooker, Jacob; Cubaynes, Florence; Beckx, Stephan; Boullart, Werner; Coenegrachts, Bart; Vertommen, Johan; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Kaiser, M.; Everaert, Jean-Luc; Jurczak, Gosia; Biesemans, Serge (2004) -
8Å Tinv gate-first dual channel technology achieving low-Vt high performance CMOS
Witters, Liesbeth; Takeoka, Shinji; Yamaguchi, Shinpei; Hikavyy, Andriy; Shamiryan, Denis; Cho, Moon Ju; Chiarella, Thomas; Ragnarsson, Lars-Ake; Loo, Roger; Kerner, Christoph; Crabbe, Yvo; Franco, Jacopo; Tseng, Joshua; Wang, Wei-E; Rohr, Erika; Schram, Tom; Richard, Olivier; Bender, Hugo; Biesemans, Serge; Absil, Philippe; Hoffmann, Thomas Y. (2010) -
A 35nm diameter vertical silicon nanowire short-gate tunnelFET
Vandooren, Anne; Rooyackers, Rita; Leonelli, Daniele; Iacopi, Francesca; De Gendt, Stefan; Verhulst, Anne; Heyns, Marc; Kunnen, Eddy; Nguyen, Duy; Demand, Marc; Ong, Patrick; Lee, Willie; Moonens, Jos; Richard, Olivier; Vandenberghe, William; Groeseneken, Guido (2009) -
A high-reliable Cu/ULK integration scheme using Metal Hard Mask and Low-k capping film
Travaly, Youssef; Tsutsue, M.; Ikeda, Atsushi; Verdonck, Patrick; Tokei, Zsolt; Willegems, Myriam; Van Aelst, Joke; Struyf, Herbert; Vereecke, Guy; Kesters, Els; Le, Quoc Toan; Claes, Martine; Heylen, Nancy; Sinapi, Fabrice; Richard, Olivier; De Roest, David; Kaneko, S; Kemeling, N; Fukazawa, A; Matsuki, N; Matsushita, K; Tsuji, N; Kagami, K; Sprey, Hessel; Beyer, Gerald (2007) -
A microstructural study of the thermal stability of atomic layer deposited Al2O3 thin films
Nistor, L.; Richard, Olivier; Zhao, Chao; Bender, Hugo; Stesmans, Andre; Van Tendeloo, G. (2003-04) -
A new technique to fabricate ultra-shallow-junctions, combining in-situ vapour HCl etching and in-situ doped epitaxial SiGe re-growth
Loo, Roger; Caymax, Matty; Meunier-Beillard, Philippe; Peytier, Ivan; Holsteyns, Frank; Kubicek, Stefan; Verheyen, Peter; Lindsay, Richard; Richard, Olivier (2004) -
A new technique to fabricate Ultra-Shallow-Junctions, combining in-situ vapour HCl etching and in-situ doped epitaxial SiGe re-growth
Loo, Roger; Caymax, Matty; Meunier-Beillard, Philippe; Peytier, Ivan; Holsteyns, Frank; Kubicek, Stefan; Verheyen, Peter; Lindsay, Richard; Richard, Olivier (2003-01) -
A novel concept for contact etch residue removal
Vos, Ingrid; Hellin, David; Demuynck, Steven; Richard, Olivier; Conard, Thierry; Vertommen, Johan; Boullart, Werner (2007) -
A Novel Ni-Al Alloy Metal Induced Lateral Crystallization Process for Improved Channel Conduction in 3-D NAND Flash
Ramesh, Siva; Banerjee, Kaustuv; Opsomer, Karl; Rachita, Iuliana; Bastos, Joao; Soulie, Jean-Philippe; Sebaai, Farid; Favia, Paola; Korytov, Maxim; Richard, Olivier; Breuil, Laurent; Arreghini, Antonio; Van den Bosch, Geert; Rosmeulen, Maarten (2022) -
A scheme to correct for inaccuracies in the compositional analysis of SixGe1-x by Atom Probe Tomography
Dialameh, Masoud; Scheerder, Jeroen; Morris, Richard; Meersschaut, Johan; Richard, Olivier; Vandervorst, Wilfried; van der Heide, Paul; Fleischmann, Claudia (2021) -
A theoretical and experimental study of atomic-layer-deposited films onto porous dielectric substrates
Travaly, Youssef; Schuhmacher, Jorg; Baklanov, Mikhaïl; Giangrandi, Simone; Richard, Olivier; Brijs, Bert; Van Hove, Marleen; Maex, Karen; Abell, Thomas; Somers, K.R.F; Hendrickx, M.F.A; Vanquickenborne, L.G.; Ceulemans, A.; Jonas, A.M (2005-10) -
a-VMCO: a novel forming-free, self-rectifying analog memory cell with low-current operation, nonfilamentary switching and excellent variability
Govoreanu, Bogdan; Crotti, Davide; Subhechha, Subhali; Zhang, Leqi; Chen, Yangyin; Clima, Sergiu; Paraschiv, Vasile; Hody, Hubert; Adelmann, Christoph; Popovici, Mihaela Ioana; Richard, Olivier; Jurczak, Gosia (2015) -
Addressing Key Challenges for SiGe-pFin Technologies: Fin Integrity, Low-D-IT Si-cap-free Gate Stack and Optimizing the Channel Strain
Arimura, Hiroaki; Capogreco, Elena; Wostyn, Kurt; Eneman, Geert; Ragnarsson, Lars-Ake; Brus, Stephan; Baudot, Sylvain; Peter, Antony; Schram, Tom; Favia, Paola; Richard, Olivier; Bender, Hugo; Mitard, Jerome; Horiguchi, Naoto (2020) -
Advanced 3D characterisation of semiconductor devices: hybrid metrology correlating STEM-EDXS and atom probe tomography
Kundu, Paromita; Fleischmann, Claudia; Van Marcke, Patricia; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; van der Heide, Paul (2018)