Browsing by author "Redolfi, Augusto"
Now showing items 1-20 of 110
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3D chip package interaction thermo-mechanical challenges: proximity effects of through silicon vias and μ-bumps
Guo, Wei; Van der Plas, Geert; Ivankovic, Andrej; Eneman, Geert; Cherman, Vladimir; De Wachter, Bart; Mercha, Abdelkarim; Gonzalez, Mario; Civale, Yann; Redolfi, Augusto; Buisson, Thibault; Jourdain, Anne; Vandevelde, Bart; Rebibis, Kenneth June; De Wolf, Ingrid; La Manna, Antonio; Beyer, Gerald; Beyne, Eric; Swinnen, Bart (2012) -
3D technology roadmap and status
Marchal, Pol; Van der Plas, Geert; Eneman, Geert; Moroz, V.; Badaroglu, Mustafa; Mercha, Abdelkarim; Thijs, Steven; Linten, Dimitri; Katti, Guruprasad; Stucchi, Michele; Vandevelde, Bart; Oprins, Herman; Cherman, Vladimir; Croes, Kris; Redolfi, Augusto; La Manna, Antonio; Travaly, Youssef; Beyne, Eric; Cartuyvels, Rudi (2011) -
A low-voltage biasing scheme for aggressively scaled bulk FinFET 1T-DRAM featuring 10s retention at 85°C
Collaert, Nadine; Aoulaiche, Marc; De Wachter, Bart; Rakowski, Michal; Redolfi, Augusto; Brus, Stephan; De Keersgieter, An; Horiguchi, Naoto; Altimime, Laith; Jurczak, Gosia (2010) -
A novel CBRAM integration using subtractive dry-etching process of Cu enabling high-performance memory scaling down to 10nm node
Redolfi, Augusto; Goux, Ludovic; Jossart, Nico; Yamashita, Fumiko; Nishimura, Eiichi; Urayama, Daisuke; Fujimoto, Kiwamu; Witters, Thomas; Lazzarino, Frederic; Jurczak, Gosia (2015) -
A novel integration scheme for wafer singulation and selective processing using temporary dry film resist
La Grappe, Alexandre; Visker, Evert; Redolfi, Augusto; Peng, Lan; Muga, Karthik; Huls, David; Vanhaelemeersch, Serge; Lauwers, Anne; Ackaert, Jan (2021) -
A plasma etch process for bulk finFET manufacturing
Shamiryan, Denis; Redolfi, Augusto; Boullart, Werner (2007-10) -
Advanced a-VMCO resistive switching memory through inner interface engineering with wide (>10²) on/off window, tunable μA-range switching current and excellent variability
Govoreanu, Bogdan; Di Piazza, Luca; Ma, Jigang; Conard, Thierry; Vanleenhove, Anja; Belmonte, Attilio; Radisic, Dunja; Popovici, Mihaela Ioana; Velea, Alin; Redolfi, Augusto; Richard, Olivier; Clima, Sergiu; Adelmann, Christoph; Bender, Hugo; Jurczak, Gosia (2016) -
Advanced dielectrics targeting 2X DRAM MIM capacitors
Popovici, Mihaela Ioana; Swerts, Johan; Aoulaiche, Marc; Redolfi, Augusto; Kaczer, Ben; Kim, Min-Soo; Douhard, Bastien; Delabie, Annelies; Clima, Sergiu; Jurczak, Gosia; Van Elshocht, Sven (2013) -
Advanced physical analysis of 3D interconnect
Ramachandran, Vidhya; Torregiani, Cristina; Dong Wook, Kim; Gu, Sam; Nowak, Matt; DiBattista, Michael; Babak, Motamedi; Civale, Yann; Redolfi, Augusto; Beyne, Eric; Croes, Kristof; Li, Yunlong; Routh, Bryan; Rue, Chad (2012) -
Analysis of the excellent memory disturb characteristics of a hourglass-shaped filament in Al2O3/Cu-based CBRAM devices
Belmonte, Attilio; Celano, Umberto; Redolfi, Augusto; Fantini, Andrea; Muller, Robert; Vandervorst, Wilfried; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2015) -
Arsenic and phosphorus co-implantation for deep-submicron CMOS gate and source/drain engineering
Augendre, Emmanuel; De Keersgieter, An; Kubicek, Stefan; Redolfi, Augusto; Van Laer, Joris; Badenes, Gonçal (2001) -
Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession
Chiarella, Thomas; Witters, Liesbeth; Mercha, Abdelkarim; Kerner, Christoph; Rakowski, Michal; Ortolland, Claude; Ragnarsson, Lars-Ake; Parvais, Bertrand; De Keersgieter, An; Kubicek, Stefan; Redolfi, Augusto; Vrancken, Christa; Brus, Stephan; Lauwers, Anne; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010) -
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
Redolfi, Augusto; Sleeckx, Erik; Devriendt, Katia; Shamiryan, Denis; Vandeweyer, Tom; Horiguchi, Naoto; Togo, Mitsuhiro; Wouters, Johan M. D.; Jurczak, Gosia; Hoffmann, Thomas Y.; Cockburn, Andrew; Gravey, Virginie; Diehl, D.L. (2011-03) -
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
Redolfi, Augusto; Kubicek, Stefan; Rooyackers, Rita; Kim, Min-Soo; Sleeckx, Erik; Devriendt, Katia; Shamiryan, Denis; Vandeweyer, Tom; Delande, Tinne; Horiguchi, Naoto; Togo, Mitsuhiro; Wouters, Johan M. D.; Jurczak, Gosia; Hoffmann, Thomas Y.; Cockburn, Andrew; Gravey, Virginie; Diehl, D.L. (2012) -
Bulk FinFET Fin height control using Gas Cluster Ion Beam (GCIB) - Location Specific Processing (LSP)
Kim, Min-Soo; Ritzenthaler, Romain; Everaert, Jean-Luc; Fernandez, Luis; Devriendt, Katia; Lee, Jae Woo; Redolfi, Augusto; Mertens, Sofie; Burke, Ed; Horiguchi, Naoto; Thean, Aaron (2013) -
Characteristics and integration challenges of FinFET-based devices for (Sub-)22nm technology nodes circuit applications
Veloso, Anabela; Van Dal, Mark; Collaert, Nadine; De Keersgieter, An; Witters, Liesbeth; Rooyackers, Rita; Redolfi, Augusto; Brus, Stephan; Duffy, Ray; Pawlak, Bartek; Vellianitis, Georgios; Duriez, Blandine; Merelle, Thomas; Absil, Philippe; Biesemans, Serge; Jurczak, Gosia; Hoffmann, Thomas Y.; Lander, Rob (2009-10) -
Co active electrode enhances CBRAM performance and scaling potential
Belmonte, Attilio; Radhakrishnan, Janaki; Donadio, Gabriele Luca; Redolfi, Augusto; Delhougne, Romain; Nyns, Laura; Covello, Angelo; Vereecke, Guy; Franquet, Alexis; Spampinato, Valentina; Kundu, Shreya; Mao, Ming; Goux, Ludovic; Kar, Gouri Sankar (2019) -
Comparison of x-ray diffraction, wafer curvature and Raman spectroscopy to evaluate the stress evolution in Copper TSV's
Wilson, Chris; De Wolf, Ingrid; Vandevelde, Bart; De Messemaeker, Joke; Ablett, James M.; Redolfi, Augusto; Simons, Veerle; Beyne, Eric; Croes, Kristof (2012) -
Comprehensive analysis of the impact of single and arrays of through silicon vias induced stress on high-k / metal gate CMOS performances
Mercha, Abdelkarim; Van der Plas, Geert; Moroz, V.; De Wolf, Ingrid; Asimakopoulos, Panagiotis; Minas, Nikolaos; Domae, Shinichi; Perry, Dan; Choi, M.; Redolfi, Augusto; Okoro, Chukwudi; Yang, Yu; Van Olmen, Jan; Thangaraju, Sarasvathi; Sabuncuoglu Tezcan, Deniz; Soussan, Philippe; Cho, Jong Hoon; Yakovlev, A.; Marchal, Pol; Travaly, Youssef; Beyne, Eric; Biesemans, Serge; Swinnen, Bart (2010) -
Copper through silicon via induced keep out zone for 10nm node bulk FinFET CMOS technology
Guo, Wei; Moroz, Victor; Van der Plas, Geert; Choi, M.; Redolfi, Augusto; Smith, L.; Eneman, Geert; Van Huylenbroeck, Stefaan; Su, P.D.; Ivankovic, Andrej; De Wachter, Bart; Debusschere, Ingrid; Croes, Kris; De Wolf, Ingrid; Mercha, Abdelkarim; Beyer, Gerald; Swinnen, Bart; Beyne, Eric (2013)