Browsing by author "Shamiryan, Denis"

25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions

Verheyen, Peter; Collaert, Nadine; Rooyackers, Rita; Loo, Roger; Shamiryan, Denis; De Keersgieter, An; Eneman, Geert; Leys, Frederik; Dixit, Abhisek; Goodwin, Michael; Yim, Yong Sik; Caymax, Matty; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005)

8Å Tinv gate-first dual channel technology achieving low-Vt high performance CMOS

Witters, Liesbeth; Takeoka, Shinji; Yamaguchi, Shinpei; Hikavyy, Andriy; Shamiryan, Denis; Cho, Moon Ju; Chiarella, Thomas; Ragnarsson, Lars-Ake; Loo, Roger; Kerner, Christoph; Crabbe, Yvo; Franco, Jacopo; Tseng, Joshua; Wang, Wei-E; Rohr, Erika; Schram, Tom; Richard, Olivier; Bender, Hugo; Biesemans, Serge; Absil, Philippe; Hoffmann, Thomas Y. (2010)

A discussion of the practical importance of positron annihilation lifetime spectroscopy percolation threshold in evaluation of porous low-k dielectrics

Mogilnikov, K.P.; Baklanov, Mikhaïl; Shamiryan, Denis; Petkov, M.P. (2004-01)

A plasma etch process for bulk finFET manufacturing

Shamiryan, Denis; Redolfi, Augusto; Boullart, Werner (2007-10)

Atomic layer deposited barriers for copper interconnects

Schuhmacher, Jorg; Martin Hoyas, Ana; Ernur, Didem; Tokei, Zsolt; Travaly, Youssef; Bruynseraede, Christophe; Satta, Alessandra; Whelan, Caroline; Shamiryan, Denis; Beyer, Gerald; Abell, Thomas; Sutcliffe, Victor; Schaekers, Marc; Maex, Karen (2004)

Barrier deposition on porous low-k films

Shamiryan, Denis; Yanovitskaya, Z.S.; Iacopi, Francesca; Maex, Karen (2003)

Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques

Redolfi, Augusto; Sleeckx, Erik; Devriendt, Katia; Shamiryan, Denis; Vandeweyer, Tom; Horiguchi, Naoto; Togo, Mitsuhiro; Wouters, Johan M. D.; Jurczak, Gosia; Hoffmann, Thomas Y.; Cockburn, Andrew; Gravey, Virginie; Diehl, D.L. (2011-03)

Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques

Redolfi, Augusto; Kubicek, Stefan; Rooyackers, Rita; Kim, Min-Soo; Sleeckx, Erik; Devriendt, Katia; Shamiryan, Denis; Vandeweyer, Tom; Delande, Tinne; Horiguchi, Naoto; Togo, Mitsuhiro; Wouters, Johan M. D.; Jurczak, Gosia; Hoffmann, Thomas Y.; Cockburn, Andrew; Gravey, Virginie; Diehl, D.L. (2012)

C2H4-based plasma-assisted CD shrink and contact patterning for RRAM application

Milenin, Alexey; Lisoni, Judit; Jossart, Nico; Jurczak, Gosia; Struyf, Herbert; Shamiryan, Denis; Brouri, Mohand; Boullart, Werner (2010)

Characterisation of Cu surface cleaning by downstream N2/H2 plasma

Baklanov, Mikhaïl; Shamiryan, Denis; Beyer, Gerald; Conard, Thierry; Vanhaelemeersch, Serge; Maex, Karen (2001)

Characteristics of Selective Epitaxial SiGe and Si Deposition processes for recessed source/drain applications

Loo, Roger; Verheyen, Peter; Eneman, Geert; Rooyackers, Rita; Leys, Frederik; Shamiryan, Denis; De Meyer, Kristin; Absil, Philippe; Caymax, Matty (2005)

Characteristics of selective epitaxial SiGe deposition processes for recesssed source/drain applications

Loo, Roger; Verheyen, Peter; Eneman, Geert; Rooyackers, Rita; Leys, Frederik; Shamiryan, Denis; De Meyer, Kristin; Absil, Philippe; Caymax, Matty (2005)

Characterization of Cu surface cleaning by hydrogen plasma

Baklanov, Mikhaïl; Shamiryan, Denis; Tokei, Zsolt; Beyer, Gerald; Conard, Thierry; Vanhaelemeersch, Serge; Maex, Karen (2001)

Charging and the secondary electron-electron emission on a trench surface: broadening and shift of ion energy spectrum at plasma trench etching

Palov, A P; Mankelevich, Yu A; Rakhimova, T V; Shamiryan, Denis (2010)