Browsing by author "Green, Martin"
Now showing items 1-19 of 19
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A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers
Alam, M.A.; Green, Martin; Ho, M.Y.; Vandervorst, Wilfried; Brijs, Bert; Conard, Thierry; Räisänen, P.I. (2002) -
Advanced surface preparation leading into the nano-era
Onsia, Bart; De Gendt, Stefan; Delabie, Annelies; Van Elshocht, Sven; Caymax, Matty; Conard, Thierry; Heyns, Marc; Lin, S.; Green, Martin; Tsai, Wilman (2003) -
ALD HfO2 surface preparation study
Delabie, Annelies; Caymax, Matty; Maes, Jan; Bajolet, Philippe; Brijs, Bert; Cartier, Eduard; Conard, Thierry; De Gendt, Stefan; Richard, Olivier; Vandervorst, Wilfried; Zhao, Chao; Green, Martin; Tsai, Wilman; Heyns, Marc (2003) -
Characterization of high-k films grown by atomic layer deposition
Vandervorst, Wilfried; Conard, Thierry; Petry, Jasmine; Brijs, Bert; Bender, Hugo; Richard, Olivier; Caymax, Matty; De Gendt, Stefan; Green, Martin; Cartier, Eduard; Copel, M. (2002) -
Comparison of sub 1 nm TiN/HfO2 with Poly-Si/HfO2 gate stacks u sing scaled chemical oxide interfaces
Tsai, Wilman; Ragnarsson, Lars-Ake; Chen, P.J.; Onsia, Bart; Carter, Richard; Cartier, Eduard; Young, Edward; Green, Martin; Caymax, Matty; De Gendt, Stefan; Heyns, Marc (2003) -
Dielectric films for advanced microelectronics
Baklanov, Mikhaïl; Green, Martin; Maex, Karen (2007) -
Enhanced initial growth of atomic layer deposited metal oxides on hydrogen-terminated silicon
Frank, Martin M.; Chabal, Yves J.; Green, Martin; Delabie, Annelies; Brijs, Bert; Wilk, Glen D.; Ho, Mun-Yee; da Rosa, Elisa B.O.; Baumvol, Israel J.R.; Stedile, Fernanda C. (2003) -
Growth and characterization of single and mixed metal oxides by ALCVD on various surfaces for high-k gate stack applications
Caymax, Matty; Brijs, Bert; Carter, Richard; Claes, Martine; Conard, Thierry; De Gendt, Stefan; Delabie, Annelies; Heyns, Marc; Richard, Olivier; Vandervorst, Wilfried; Zhao, Chao; Maes, Jan; Chen, Jerry; Cosnier, Vincent; Green, Martin; Kaushik, Vidya; Kluth, Jon; Tsai, Wilman (2002) -
Hafnium oxide films by atomic layer deposition for high-k gate dielectric applications: analysis of the density of nanometer-thin films
Puurunen, Riikka; Delabie, Annelies; Van Elshocht, Sven; Caymax, Matty; Green, Martin; Brijs, Bert; Richard, Olivier; Bender, Hugo; Conard, Thierry; Hoflijk, Ilse; Vandervorst, Wilfried; Hellin, David; Vanhaeren, Danielle; Zhao, Chao; De Gendt, Stefan; Heyns, Marc (2005) -
Improved film growth and flatband voltage control of ALD HfO2 and Hf-Al-O with n+ poly-si gates using chemical oxides and optimized post-annealing
Wilk, G. D.; Green, Martin; M.-Y., Ho; Busch, B. W.; Sorsch, T. W.; Klemens, F. P.; Brijs, Bert; van Dover, R. B.; Kornblit, A.; Gustafsson, T.; Garfunkel, E.; Hillenius, S.; Monroe, D.; Kalavade, P.; Hergenrother, J. M. (2002) -
Initial growth kinetics of ALD Al2O3 and HfO2 and post-annealing effects
Wilk, G.D.; Frank, M.; Ho, M.Y.; Green, Martin; Chabal, Y.J.; Raisanen, P.; Brijs, Bert; Sorsch, T.W. (2002) -
Mathematical description of atomic layer deposition and its application to the nucleation and growth of HfO2 gate dielectric layers
Alam, M.A.; Green, Martin (2003) -
Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N)
Green, Martin; Ho, M.Y.; Busch, B.; Wilk, G.D.; Sorsch, T.; Conard, Thierry; Brijs, Bert; Vandervorst, Wilfried; Räisänen, P.I.; Muller, D.; Bude, M.; Grazul, J. (2002) -
Physical characterisation of high-gate stacks
Vandervorst, Wilfried; Bender, Hugo; Conard, Thierry; Richard, Olivier; Zhao, Chao; Brijs, Bert; Caymax, Matty; De Gendt, Stefan; Cosnier, Vincent; Chen, Jerry; Kluth, J.; Cartier, Eduard; Green, Martin (2002) -
Physical characterization of ultrathin high k dielectrics
Vandervorst, Wilfried; Brijs, Bert; Bender, Hugo; Conard, Thierry; Petry, Jasmine; Richard, Olivier; Van Elshocht, Sven; Delabie, Annelies; Caymax, Matty; De Gendt, Stefan; Cosnier, Vincent; Green, Martin; Chen, Jerry (2003) -
Polarity dependent charge trapping in thin SiO2/Al2O3 gate staks with poly-Si gate electrodes: influence of high temperature annealing
Lucci, Luca; Pantisano, Luigi; Cartier, Eduard; Kerber, Andreas; Groeseneken, Guido; Ho, M.Y.; Green, Martin; Selmi, L. (2002) -
Scaling of high-k dielectrics towards sub-1nm EOT
Heyns, Marc; Beckx, Stephan; Bender, Hugo; Blomme, Pieter; Boullart, Werner; Brijs, Bert; Carter, Richard; Caymax, Matty; Claes, Martine; Conard, Thierry; De Gendt, Stefan; Degraeve, Robin; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Henson, Kirklen; Kauerauf, Thomas; Kubicek, Stefan; Lucci, Luca; Lujan, Guilherme; Mentens, Jimmy; Pantisano, Luigi; Petry, Jasmine; Richard, Olivier; Röhr, Erika; Schram, Tom; Vandervorst, Wilfried; Van Doorne, Patrick; Van Elshocht, Sven; Westlinder, Jörgen; Witters, Thomas; Zhao, Chao; Cartier, Eduard; Chen, Jerry; Cosnier, Vincent; Green, Martin; Jang, Se Aug; Kaushik, Vidya; Kerber, Andreas; Kluth, Jon; Lin, Steven; Tsai, Wilman; Young, Edward; Manabe, Yukiko; Shimamoto, Yasuhiro; Bajolet, Philippe; De Witte, Hilde; Maes, Jan; Date, Lucien; Pique, Didier; Coenegrachts, Bart; Vertommen, Johan; Passefort, Sophie (2003) -
The influence of defects on campatibility and yield of the HfO2-polysilicon gate stack for CMOS integration
Kaushik, Vidya; De Gendt, Stefan; Carter, Richard; Claes, Martine; Röhr, Erika; Pantisano, Luigi; Kluth, Jon; Kerber, Andreas; Cosnier, Vincent; Cartier, Eduard; Tsai, Wilman; Young, Edward; Green, Martin; Chen, Jerry; Jang, S.A.; Lin, S.; Delabie, Annelies; Van Elshocht, Sven; Manabe, Yukiko; Richard, Olivier; Zhao, Chao; Bender, Hugo; Caymax, Matty; Heyns, Marc (2003) -
Ultrathin (< 4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: understanding the processing, structure, and physical and electrical limits
Green, Martin; Gusev, E. P.; Degraeve, Robin; Garfunkel, E. L. (2001)