Browsing by author "Hopf, Toby"

Now showing items 1-20 of 21

    • Buried power rail integration with FinFETs for ultimate CMOS scaling 

      Gupta, Anshul; Varela Pedreira, Olalla; Arutchelvan, Goutham; Zahedmanesh, Houman; Devriendt, Katia; Hanssen, Frederik; Tao, Zheng; Ritzenthaler, Romain; Wang, Shouhua; Radisic, Dunja; Kenis, Karine; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; Jourdan, Nicolas; Chan, BT; Subramanian, Sujith; Schleicher, Filip; Hopf, Toby; Peter, Antony; Rassoul, Nouredine; Debruyn, Haroen; Demonie, Ingrid; Siew, Yong Kong; Chiarella, Thomas; Briggs, Basoene; Zhou, Daisy; Rosseel, Erik; De Keersgieter, An; Capogreco, Elena; Dentoni Litta, Eugenio; Boccardi, Guillaume; Baudot, Sylvain; Mannaert, Geert; Bontemps, Noemie; Sepulveda Marquez, Alfonso; Mertens, Sofie; Kim, Min-Soo; Dupuy, Emmanuel; Vandersmissen, Kevin; Paolillo, Sara; Cousserier, Joris; Yakimets, Dmitry; Lazzarino, Frederic; Chehab, Bilal; Favia, Paola; Drijbooms, Chris; Jaysankar, Manoj; Morin, Pierre; Altamirano Sanchez, Efrain; Mitard, Jerome; Wilson, Chris; Holsteyns, Frank; Boemmels, Juergen; Demuynck, Steven; Tokei, Zsolt; Horiguchi, Naoto (2020)

    • Buried Power Rail Integration with Si FinFETs for CMOS Scaling beyond the 5 nm Node 

      Gupta, Anshul; Mertens, Hans; Tao, Zheng; Demuynck, Steven; Boemmels, Juergen; Arutchelvan, Goutham; Devriendt, Katia; Varela Pedreira, Olalla; Ritzenthaler, Romain; Wang, Shouhua; Radisic, Dunja; Kenis, Karine; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; Jourdan, Nicolas; Chan, BT; Zahedmanesh, Houman; Subramanian, Sujith; Schleicher, Filip; Hopf, Toby; Peter, Antony; Rassoul, Nouredine; Debruyn, Haroen; Demonie, Ingrid; Siew, Yong Kong; Chiarella, Thomas; Briggs, Basoene; Zhou, Daisy; Rosseel, Erik; De Keersgieter, An; Capogreco, Elena; Dentoni Litta, Eugenio; Boccardi, Guillaume; Baudot, Sylvain; Mannaert, Geert; Bontemps, N.; Sepulveda Marquez, Alfonso; Mertens, Sofie; Kim, Min Soo; Dupuy, Emmanuel; Vandersmissen, Kevin; Paolillo, Sara; Yakimets, Dmitry; Chehab, Bilal; Favia, Paola; Drijbooms, Chris; Cousserier, Joris; Jaysankar, Manoj; Lazzarino, Frederic; Morin, Pierre; Altamirano Sanchez, Efrain; Mitard, Jerome; Wilson, Chris; Holsteyns, Frank; Tokei, Zsolt; Horiguchi, Naoto (2020)

    • Challenges and solutions of replacement metal gate patterning to enable gate-all-around device scaling 

      Oniki, Yusuke; Ragnarsson, Lars-Ake; Hideaki, Iino; Cott, Daire; Chan, BT; Sebaai, Farid; Hopf, Toby; Dekkers, Harold; Dentoni Litta, Eugenio; Altamirano Sanchez, Efrain; Holsteyns, Frank; Horiguchi, Naoto (2021)

    • CMOS patterning over high aspect ratio topographies for N10/N7 using spin-on carbon hardmasks 

      Hopf, Toby; Ercken, Monique; Mannaert, Geert; Kunnen, Eddy; Tao, Zheng; Vandenbroeck, Nadia; Sebaai, Farid; Kikuchi, Yoshiaki; Mertens, Hans; Kubicek, Stefan; Demuynck, Steven; Horiguchi, Naoto (2017)

    • CMOS patterning over high-aspect ratio topographies for N10/N7 using spin-on carbon hardmasks 

      Hopf, Toby; Ercken, Monique; Mannaert, Geert; Kunnen, Eddy; Tao, Zheng; Vandenbroeck, Nadia; Sebaai, Farid; Kikuchi, Yoshiaki; Mertens, Hans; Kubicek, Stefan; Demuynck, Steven; Horiguchi, Naoto (2017)

    • Enabling Logic with Backside Connectivity via n-TSVs and its Potential as a Scaling Booster 

      Veloso, Anabela; Jourdain, Anne; Hiblot, Gaspard; Schleicher, Filip; D'have, Koen; Sebaai, Farid; Radisic, Dunja; Loo, Roger; Hopf, Toby; De Keersgieter, An; Arimura, Hiroaki; Eneman, Geert; Favia, Paola; Geypen, Jef; Arutchelvan, Goutham; Vaisman Chasin, Adrian; Jang, Doyoung; Nyns, Laura; Rosseel, Erik; Hikavyy, Andriy; Mannaert, Geert; Chan, BT; Devriendt, Katia; Demuynck, Steven; Van der Plas, Geert; Ryckaert, Julien; Beyer, Gerald; Dentoni Litta, Eugenio; Beyne, Eric; Horiguchi, Naoto (2021)

    • Fabrication challenges and opportunities for high-mobility materials: from CMOS applications to emerging derivative technologies 

      Collaert, Nadine; Alian, AliReza; De Jaeger, Brice; Peralagu, Uthayasankaran; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Capogreco, Elena; Devriendt, Katia; Hopf, Toby; Kenis, Karine; Mannaert, Geert; Milenin, Alexey; Peter, Antony; Sebaai, Farid; Teugels, Lieve; van Dorp, Dennis; Wostyn, Kurt; Horiguchi, Naoto; Waldron, Niamh (2019-03)

    • Fin bending in dimensional scaling 

      Zhang, Liping; Hellin, David; Sepulveda Marquez, Alfonso; Altamirano Sanchez, Efrain; Lazzarino, Frederic; Morin, Pierre; Wang, Shouhua; Hopf, Toby; Kenis, Karine; Lorant, Christophe; Sebaai, Farid; Batuk, Dmitry; Briggs, Basoene; Mertens, Hans; Demuynck, Steven (2020)

    • First Monolithic Integration of 3D Complementary FET (CFET) on 300mm Wafers 

      Subramanian, Sujith; Hosseini, Maryam; Chiarella, Thomas; Sarkar, Satadru; Schuddinck, Pieter; Chan, BT; Radisic, Dunja; Mannaert, Geert; Hikavyy, Andriy; Rosseel, Erik; Sebaai, Farid; Peter, Antony; Hopf, Toby; Morin, Pierre; Wang, Shouhua; Devriendt, Katia; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Veloso, Anabela; Dentoni Litta, Eugenio; Baudot, Sylvain; Siew, Yong Kong; Zhou, X.; Briggs, Basoene; Capogreco, Elena; Hung, Joey; Koret, R.; Spessot, Alessio; Ryckaert, Julien; Demuynck, Steven; Horiguchi, Naoto; Boemmels, Juergen (2020)

    • Forksheet FETs for Advanced CMOS Scaling: Forksheet-Nanosheet Co-Integration and Dual Work Function Metal Gates at 17nm N-P Space 

      Mertens, Hans; Ritzenthaler, Romain; Oniki, Yusuke; Briggs, Basoene; Chan, BT; Hikavyy, Andriy; Hopf, Toby; Mannaert, Geert; Tao, Zheng; Sebaai, Farid; Peter, Antony; Vandersmissen, Kevin; Dupuy, Emmanuel; Rosseel, Erik; Batuk, Dmitry; Geypen, Jef; Martinez Alanis, Gerardo Tadeo; Abigail, Daniel_; Grieten, Eva; D'have, Koen; Mitard, Jerome; Subramanian, Sujith; Ragnarsson, Lars-Ake; Weckx, Pieter; Chehab, Bilal; Hellings, Geert; Ryckaert, Julien; Dentoni Litta, Eugenio; Horiguchi, Naoto (2021)

    • Gate-all-around transistors based on vertically stacked Si nanowires 

      Mertens, Hans; Ritzenthaler, Romain; Hikavyy, Andriy; Kim, Min-Soo; Tao, Zheng; Wostyn, Kurt; Schram, Tom; Kunnen, Eddy; Ragnarsson, Lars-Ake; Dekkers, Harold; Hopf, Toby; Devriendt, Katia; Tsvetanova, Diana; Chew, Soon Aik; Kikuchi, Yoshiaki; Van Besien, Els; Rosseel, Erik; Mannaert, Geert; De Keersgieter, An; Vaisman Chasin, Adrian; Kubicek, Stefan; Dangol, Anish; Demuynck, Steven; Barla, Kathy; Mocuta, Dan; Horiguchi, Naoto (2017)

    • Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature phosphorus extension ion implantation 

      Kikuchi, Yoshiaki; Hopf, Toby; Mannaert, Geert; Everaert, Jean-Luc; Kubicek, Stefan; Eyben, Pierre; Waite, Andrew; Borniquel, Jose; Variam, Naushad; Mocuta, Dan; Horiguchi, Naoto (2019)

    • Improvement of the CMOS characteristics of bulk Si FinFETs by high temperature ion implantation 

      Kikuchi, Yoshiaki; Hopf, Toby; Mannaert, Geert; Tao, Zheng; Waite, A.; Cournoyer, J.; Borniquel, J.; Schreutelkamp, Rob; Ritzenthaler, Romain; Kim, Min-Soo; Kubicek, Stefan; Chew, Soon Aik; Devriendt, Katia; Schram, Tom; Demuynck, Steven; Variam, N.; Horiguchi, Naoto; Mocuta, Dan (2016)

    • Plasma etch selectivity study and material screening for Self-Aligned Gate Contact (SAGC) 

      Radisic, Dunja; Demand, Marc; Chan, Shihsheng; Demuynck, Steven; Kumar, Kaushik; Metz, Andrew; Teugels, Lieve; Sun, Junling; Smith, Jeffrey; Sebaai, Farid; Hopf, Toby; Altamirano Sanchez, Efrain (2019)

    • Replacement metal contact using sacrificial ILD0 for wrap around contact in scaled FinFET technology 

      Chew, Soon Aik; Demuynck, Steven; Zhang, Liping; Pacco, Antoine; Devriendt, Katia; Teugels, Lieve; Hopf, Toby; Versluijs, Janko; Vrancken, Christa; Dangol, Anish; Altamirano Sanchez, Efrain; Mocuta, Dan; Horiguchi, Naoto (2018)

    • Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails 

      Veloso, Anabela; Jourdain, Anne; Radisic, Dunja; Chen, Rongmei; Arutchelvan, Goutham; O'Sullivan, Barry; Arimura, Hiroaki; Stucchi, Michele; De Keersgieter, An; Hosseini, Maryam; Hopf, Toby; D'have, Koen; Wang, Shouhua; Dupuy, Emmanuel; Mannaert, Geert; Vandersmissen, Kevin; Iacovo, Serena; Marien, Philippe; Choudhury, Subhobroto; Schleicher, Filip; Sebaai, Farid; Oniki, Yusuke; Zhou, X.; Gupta, Anshul; Schram, Tom; Briggs, Basoene; Lorant, Christophe; Rosseel, Erik; Hikavyy, Andriy; Loo, Roger; Geypen, Jef; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Soulie, Jean-Philippe; Devriendt, Katia; Chan, BT; Demuynck, Steven; Hiblot, Gaspard; Van der Plas, Geert; Ryckaert, Julien; Beyer, Gerald; Dentoni Litta, Eugenio; Beyne, Eric; Horiguchi, Naoto (2022)

    • Scaled, novel effective workfunction metal gate stacks for advanced Low-VT, gate-all-around vertically stacked nanosheet FETs with reduced vertical distance between sheets 

      Veloso, Anabela; Simoen, Eddy; Oliveira, Alberto; Vaisman Chasin, Adrian; Chen, S.-C.; Lin, Y.; Miyashita, T.; Kim, M.; Jang, Doyoung; Ritzenthaler, Romain; Zhou, Daisy; Mertens, Hans; Pena, Vanessa; Santoro, Gaetano; Kenis, Karine; Sebaai, Farid; Mannaert, Geert; Devriendt, Katia; Hopf, Toby; Versluijs, Janko; Richard, Olivier; Machillot, Jerome; Yoshida, Naomi; Horiguchi, Naoto (2019)

    • Self-aligned fin cut last patterning scheme for fin arrays of 24nm pitch and beyond 

      Baudot, Sylvain; Soussou, Assawer; Milenin, Alexey; Hopf, Toby; Wang, Shouhua; Weckx, Pieter; Vincent, Benjamin; Ervin, Joe; Demuynck, Steven (2019)

    • Self-aligned-quadruple-patterning for N7/N5 silicon fins 

      Altamirano Sanchez, Efrain; Tao, Zheng; Gunay Demirkol, Anil; Lorusso, Gian; Hopf, Toby; Everaert, Jean-Luc; Sobieski, Daniel; Ou, Fung Suong; Hellin, David; Clark, William (2016)

    • Spin on metal oxide materials for N7 and beyond patterning applications 

      Mannaert, Geert; Altamirano Sanchez, Efrain; Hopf, Toby; Sebaai, Farid; Lorant, Christophe; Petermann, Claire; Hong, S-E; Mullen, S; Wolfer, E; Mckenzie, D; Yao, H; Rahman, D; Cho, J-Y; Padmanaban, M; Piumi, Daniele (2017)