Browsing by author "Claeys, Cor"
Now showing items 1-20 of 1170
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1/f low frequency fluctuations and inversion layer quantization in deep submicron metal-oxide-semiconductor field effect transistors
Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2002) -
1/f noise and DLTS of LEDs
Chobola, Z.; Vasina, Petr; Sikula, J.; Jurankova, V.; Claeys, Cor; Simoen, Eddy (1996) -
1/f Noise in drain and gate current of MOSFETs with high-k gate stacks
Magnone, P.; Crupi, F.; Giusi, G.; Pace, C.; Simoen, Eddy; Claeys, Cor; Pantisano, Luigi; Maji, D.; Rao, V.R.; Srinivasan, P. (2009) -
1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack
Yan, L.; Simoen, Eddy; Olsen, S.H.; Akheyar, Amal; Claeys, Cor; O'Neill, A.G. (2009) -
20-MeV alpha ray effects in AlGaAsP p-HEMTs
Ohyama, Hidenori; Simoen, Eddy; Claeys, Cor; Takami, Y.; Kobayashi, K.; Yoneoka, M.; Nakabayashi, M.; Hakata, T.; Takizawa, H. (2000) -
3D backside integration of FinFETs: Is there an impact on LF noise?
Simoen, Eddy; Jourdain, Anne; Claeys, Cor; Veloso, Anabela (2023) -
A deep level study of high-temperature electron-irradiated n-type Cz silicon
Simoen, Eddy; Claeys, Cor; Neimash, V.; Kraitchinskii, A.; Kras'ko, M.; Tischenko, V.; Voitovych, V. (2004) -
A deep level study of high-temperature electron-irradiated n-type Cz silicon
Simoen, Eddy; Claeys, Cor; Neimash, V.; Kraitchinskii, A.; Kras'ko, M.; Tishenko, V.; Voitovich, V. (2003) -
A DLTS study on plasma-hydrogenated n-type high-resistivity MCz silicon
Huang, J.L.; Simoen, Eddy; Claeys, Cor; Rafi, J.M.; Clauws, P. (2007) -
A global description of the base current 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stress
Simoen, Eddy; Decoutere, Stefaan; Claeys, Cor; Deferm, Ludo (1998) -
A Low frequency noise characterization in n-channel UTBOX devices with 6 nm Si film
Cretu, Bogdan; Simoen, Eddy; Routoure, Jean-Marc; Carin, Regis; Aoulaiche, Marc; Claeys, Cor (2013) -
A low temperature technology on the base of hydrogen enhanced thermal donor formation for future high voltage applications
Job, R.; Ulyashin, A.G.; Fahrner, W.R.; Niedernostheide, F.J.; Schulze, H. J.; Simoen, Eddy; Claeys, Cor; Tonelli, G. (2002) -
A low-frequency noise study of hot-carrier stressing effects in submicron Si p-MOSFETs
Vasina, Petr; Simoen, Eddy; Claeys, Cor; Sikula, J. (1998) -
A low-frequency noise study of state-of-the-art silicon n+p junction diodes
Simoen, Eddy; Vanhellemont, Jan; Claeys, Cor; Bosman, Gijs (1995) -
A low-frequency noise study of the physical hot-carrier degradation mechanisms in lowly-doped-drain Si MOSFETs
Vasina, Petr; Simoen, Eddy; Sikula, J.; Claeys, Cor (1996) -
A model for MOS gate stack quality evaluation based on the gate current 1/f noise
Magnone, P.; Crupi, F.; Iannacone, G.; Giusi, G.; Pace, C.; Simoen, Eddy; Claeys, Cor (2008) -
A model for the radiation degradation of polycrystalline silicon films
Ohyama, H.; Nakabayashi, M.; Takakura, K.; Simoen, Eddy; Takami, Y.; Claeys, Cor (2002) -
A new method for determining the front and back interface trap densities of accumulation mode SOI MOSFETs at 77K
Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor (1995) -
A new method to extract the LDD doping concentration on fully depleted SOI nMOSFETs at 300K
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor (2000) -
A novel approach to analyse FTIR spectra of precipitates in moderately and heavily doped silicon
De Gryse, O.; Vanhellemont, J.; Clauws, P.; Lebedev, O.; Van Landuyt, J.; Simoen, Eddy; Claeys, Cor (2003)