Browsing by author "Vincent, Benjamin"

1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D

Mitard, Jerome; Witters, Liesbeth; Hellings, Geert; Krom, Raymond; Franco, Jacopo; Eneman, Geert; Hikavyy, Andriy; Vincent, Benjamin; Loo, Roger; Favia, Paola; Dekkers, Harold; Altamirano Sanchez, Efrain; Vanderheyden, Annelies; Vanhaeren, Danielle; Eyben, Pierre; Takeoka, Shinji; Yamaguchi, Shinpei; Van Dal, Mark; Wang, Wei-E; Hong, Sug-Hun; Vandervorst, Wilfried; De Meyer, Kristin; Biesemans, Serge; Absil, Philippe; Horiguchi, Naoto; Hoffmann, Thomas Y. (2011)

A new route for fabricating strained Ge-based pMOSFETs

Vincent, Benjamin; Loo, Roger (2012-01)

Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

Gencarelli, Federica; Shimura, Yosuke; Kumar, Arul; Vincent, Benjamin; Moussa, Alain; Vanhaeren, Danielle; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Caymax, Matty; Loo, Roger; Heyns, Marc (2015)

Assessment of Ge1-xSnx alloys for strained Ge CMOS devices

Takeuchi, S.; Shimura, Y.; Nishimura, T.; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, J.; Temst, K.; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, O.; Sakai, A.; Zaima, S. (2010)

Assessment of Ge1-xSnx alloys for strained Ge CMOS devices

Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, Tsuyoshi; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Temst, Kristiaan; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Sakai, A.; Zaima, Shigeaki (2010-10)

Atomic insight of Ge(1-x)Sn(x) using atom probe tomography

Kumar, Arul; Gencarelli, Federica; Vincent, Benjamin; Kambham, Ajay Kumar; Gilbert, Matthieu; Vandervorst, Wilfried (2012)

Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx-strained Ge-based channels

Chou, H.-Y; Afanas'ev, Valeri; Houssa, Michel; Stesmans, Andre; Vincent, Benjamin; Gencarelli, Federica; Shimura, Yosuke; Merckling, Clement; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2014)

Bandgap measurement by spectroscopic ellipsometry for strained Ge 1-x Sn x

Shimura, Yosuke; Wang, Wei; Nieddu, Thomas; Gencarelli, Federica; Vincent, Benjamin; Laha, Priya; Terryn, Herman; Stefanov, Stefan; Chiussi, Stefano; Van Campenhout, Joris; Nguyen, Ngoc Duy; Vantomme, Andre; Loo, Roger (2013-06)

Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments

Vincent, Benjamin; Gencarelli, Federica; Lin, Dennis; Nyns, Laura; Richard, Olivier; Bender, Hugo; Douhard, Bastien; Moussa, Alain; Merckling, Clement; Witters, Liesbeth; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Heyns, Marc (2011)

Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments

Vincent, Benjamin; Gencarelli, Federica; Lin, Dennis; Nyns, Laura; Richard, Olivier; Bender, Hugo; Merckling, Clement; Witters, Liesbeth; Loo, Roger; Caymax, Matty; Heyns, Marc (2011)

Challenges and opportunities in advanced Ge pMOSFETs

Simoen, Eddy; Mitard, Jerome; Hellings, Geert; Eneman, Geert; De Jaeger, Brice; Witters, Liesbeth; Vincent, Benjamin; Loo, Roger; Delabie, Annelies; Sioncke, Sonja; Caymax, Matty; Claeys, Cor (2012)

Challenges for introducing Ge and III/V devices into CMOS technologies

Heyns, Marc; Alian, AliReza; Brammertz, Guy; Caymax, Matty; Eneman, Geert; Franco, Jacopo; Gencarelli, Federica; Groeseneken, Guido; Hellings, Geert; Hikavyy, Andriy; Houssa, Michel; Kaczer, Ben; Lin, Dennis; Loo, Roger; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Nyns, Laura; Sioncke, Sonja; Vandervorst, Wilfried; Vincent, Benjamin; Waldron, Niamh; Witters, Liesbeth (2012)