Browsing by author "Vandeweyer, Tom"
Now showing items 1-20 of 65
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10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Govoreanu, Bogdan; Kar, Gouri Sankar; Chen, Yangyin; Paraschiv, Vasile; Kubicek, Stefan; Fantini, Andrea; Radu, Iuliana; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Jossart, Nico; Richard, Olivier; Vandeweyer, Tom; Seo, Kyungah; Hendrickx, Paul; Pourtois, Geoffrey; Bender, Hugo; Altimime, Laith; Wouters, Dirk; Kittl, Jorge; Jurczak, Gosia (2011) -
30-nm half-pitch metal patterning using MotifTM critical dimension shrink technique and double patterning
Versluijs, Janko; de Marneffe, Jean-Francois; Goossens, Danny; Vandeweyer, Tom; Wiaux, Vincent; Struyf, Herbert; Maenhoudt, Mireille; Brouri, Mohand; Vertommen, Johan; Kim, Ji Soo; Zhu, Helen; Sadjadi, Reza (2009) -
30nm half-pitch metal patterning using MotifTM CD shrink technique and double patterning
Versluijs, Janko; de Marneffe, Jean-Francois; Goossens, Danny; Op de Beeck, Maaike; Vandeweyer, Tom; Wiaux, Vincent; Struyf, Herbert; Maenhoudt, Mireille; Brouri, Mohand; Vertommen, Johan; Kim, Ji Soo; Zhu, Helen; Sadjadi, Reza (2008) -
A 0.314mm2 6T-SRAM cell built with tall triple-gate devices for 45nm node applications using 0.75NA 193nm lithography
Nackaerts, Axel; Ercken, Monique; Demuynck, Steven; Lauwers, Anne; Baerts, Christina; Bender, Hugo; Boullart, Werner; Collaert, Nadine; Degroote, Bart; Delvaux, Christie; de Marneffe, Jean-Francois; Dixit, Abhisek; De Meyer, Kristin; Hendrickx, Eric; Heylen, Nancy; Jaenen, Patrick; Laidler, David; Locorotondo, Sabrina; Maenhoudt, Mireille; Moelants, Myriam; Pollentier, Ivan; Ronse, Kurt; Rooyackers, Rita; Van Aelst, Joke; Vandenberghe, Geert; Vandervorst, Wilfried; Vandeweyer, Tom; Vanhaelemeersch, Serge; Van Hove, Marleen; Van Olmen, Jan; Verhaegen, Staf; Versluijs, Janko; Vrancken, Christa; Wiaux, Vincent; Jurczak, Gosia; Biesemans, Serge (2004-12) -
A 400GHz fMAX fully self-aligned SiGe:C HBT architecture
Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; You, Shuzhen; Winderickx, Gillis; Radisic, Dunja; Lee, Willie; Ong, Patrick; Vandeweyer, Tom; Nguyen, Duy; De Meyer, Kristin; Decoutere, Stefaan (2009-10) -
A feasibility study of dual damascene porous SiLK resin with spin-on hard masks
Hoofman, Romano; Michelon, Julien; Verheijden, G.J.A.M.; Waeterloos, Joost; Caluwaerts, Rudy; Schmidt, M.O.; Demeurisse, Caroline; Vandeweyer, Tom; Demuynck, Steven; Tokei, Zsolt; Beyer, Gerald (2004) -
A low-power multi-gate FET CMOS technology with 13.9ps inverter delay, large-scale integrated high performance digital circuits and SRAM
von Arnim, Klaus; Augendre, Emmanuel; Pacha, C.; Schulz, Thomas; San, Kemal Tamer; Bauer, F.; Nackaerts, Axel; Rooyackers, Rita; Vandeweyer, Tom; Degroote, Bart; Collaert, Nadine; Dixit, Abhisek; Singanamalla, Raghunath; Xiong, W.; Marshall, A.; Cleavelin, C.R.; Schrüfer, K.; Jurczak, Gosia (2007) -
A new complementary hetero-junction vertical tunnel-FET integration scheme
Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Walke, A.; Devriendt, Katia; Locorotondo, Sabrina; Demand, Marc; Bryce, George; Loo, Roger; Hikavyy, Andriy; Vandeweyer, Tom; Huyghebaert, Cedric; Collaert, Nadine; Thean, Aaron (2013) -
A novel fully self-aligned SiGe:C HBT architecture featuring a single step epitaxial collector-base process
Donkers, Johan; Kramer, Mark; Van Huylenbroeck, Stefaan; Choi, Li Jen; Meunier-Beillard, Philippe; Boccardi, Guillaume; van Noort, W.; Hurkx, G.A.M.; Vanhoucke, Tony; Sibaja-Hernandez, Arturo; Vleugels, Frank; Winderickx, Gillis; Kunnen, Eddy; Peeters, Stefan; Baute, Debbie; De Vos, Brecht; Vandeweyer, Tom; Loo, Roger; Venegas, Rafael; Pijper, R.; Decoutere, Stefaan; Hijzen, Erwin (2007) -
A study of microbump metrology and defectivity at 20m pitch and below for 3D TSV stacking
Miller, Andy; Haensel, Leander; Vandeweyer, Tom; Beyne, Eric; Wiesiollek, Markus; Eisenbach, Heiko; Filzen, Marc; Wen, Youxian; Sood, Sumant (2015) -
Advanced optical lithography: double patterning options for 32 and 22nm node
Vandeweyer, Tom; Maenhoudt, Mireille; Vangoidsenhoven, Diziana; Gronheid, Roel; Versluijs, Janko; Miller, Andy; Bekaert, Joost; Truffert, Vincent; Wiaux, Vincent (2009) -
Applying design-based metrology for calibrating an OPC model for FinFET pattering
Vandeweyer, Tom; Lorusso, Gian; Delvaux, Christie; De Backer, Johan; Jandhyala, Radhika; Azordegan, Amir; Abott, Gordon; Kaliblotzky, Zeev; Ercken, Monique (2005) -
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
Redolfi, Augusto; Sleeckx, Erik; Devriendt, Katia; Shamiryan, Denis; Vandeweyer, Tom; Horiguchi, Naoto; Togo, Mitsuhiro; Wouters, Johan M. D.; Jurczak, Gosia; Hoffmann, Thomas Y.; Cockburn, Andrew; Gravey, Virginie; Diehl, D.L. (2011-03) -
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
Redolfi, Augusto; Kubicek, Stefan; Rooyackers, Rita; Kim, Min-Soo; Sleeckx, Erik; Devriendt, Katia; Shamiryan, Denis; Vandeweyer, Tom; Delande, Tinne; Horiguchi, Naoto; Togo, Mitsuhiro; Wouters, Johan M. D.; Jurczak, Gosia; Hoffmann, Thomas Y.; Cockburn, Andrew; Gravey, Virginie; Diehl, D.L. (2012) -
Calibration and verification of a stochastic model for EUV resist
Gao, Weimin; Philippou, Alexander; Klostermann, Ulrich; Siebert, Joachim; Philipsen, Vicky; Hendrickx, Eric; Vandeweyer, Tom; Jonckheere, Rik (2012) -
Challenges building a 22nm node 6T-SRAM cell using immersion lithography
Ercken, Monique; Altamirano Sanchez, Efrain; Baerts, Christina; Brus, Stephan; De Backer, Johan; Demand, Marc; Delvaux, Christie; Horiguchi, Naoto; Locorotondo, Sabrina; Vandeweyer, Tom; Veloso, Anabela; Verhaegen, Staf (2009) -
Challenges in setting up the patterning processes for a 16nm node SRAM cell
Ercken, Monique; Vandeweyer, Tom; Versluijs, Janko; Truffert, Vincent; De Backer, Johan; Delvaux, Christie; Baerts, Christina (2010) -
Challenges in using optical lithography for the building of a 22 nm node 6T=-SRAM cell
Ercken, Monique; Altamirano Sanchez, Efrain; Baerts, Christina; Brus, Stephan; De Backer, Johan; Delvaux, Christie; Demand, Marc; Horiguchi, Naoto; Locorotondo, Sabrina; Vandeweyer, Tom; Veloso, Anabela; Verhaegen, Staf (2010) -
Critical assessment of error budget components in double patterning immersion lithography
Hepp, Birgitt; Finders, Jo; Dusa, Mircea; Vleeming, Bert; Megens, henry; Maenhoudt, Mireille; Cheng, Shaunee; Vandeweyer, Tom (2008) -
Demonstration of scaled 0.099μm² FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology
Veloso, Anabela; Demuynck, Steven; Ercken, Monique; Goethals, Mieke; Locorotondo, Sabrina; Lazzarino, Frederic; Altamirano Sanchez, Efrain; Huffman, Craig; De Keersgieter, An; Brus, Stephan; Demand, Marc; Struyf, Herbert; De Backer, Johan; Hermans, Jan; Delvaux, Christie; Baudemprez, Bart; Vandeweyer, Tom; Van Roey, Frieda; Baerts, Christina; Goossens, Danny; Dekkers, Harold; Ong, Patrick; Heylen, Nancy; Kellens, Kristof; Volders, Henny; Hikavyy, Andriy; Vrancken, Christa; Rakowski, Michal; Verhaegen, Staf; Dusa, Mircea; Romijn, Leon; Pigneret, Charles; van Dijk, Andre; Schreutelkamp, Rob; Cockburn, Andrew; Gravey, Virginie; Meiling, H.; Hultermans, B.; Lok, S.; Shah, K.; Rajagopalan, R.; Gelatos, J.; Richard, Olivier; Bender, Hugo; Vandenberghe, Geert; Beyer, Gerald; Absil, Philippe; Hoffmann, Thomas Y.; Ronse, Kurt; Biesemans, Serge (2009-12)