Browsing by author "Ji, Z."
Now showing items 1-20 of 25
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A single device based Voltage Step Stress (VSS) technique for fast reliability screening
Ji, Z.; Zhang, J. F.; Zhang, W. D.; Zhang, X.; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido; Ren, P.; Wang, R.; Huang, R. (2014) -
A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias
Ji, Z.; Zhang, J.F.; Lin, L.; Duan, M.; Zhang, W.; Zhang, X.; Gao, R.; Kaczer, Ben; Franco, Jacopo; Schram, Tom; Horiguchi, Naoto; De Gendt, Stefan; Groeseneken, Guido (2015) -
AC NBTI of Ge pMOSFETs: impact of energy alternating defects on lifetime prediction
Ma, J.; Zhang, W.; Zhang, J.F.; Ji, Z.; Benbakhti, B.; Franco, Jacopo; Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine; Groeseneken, Guido (2015) -
An assessment of the mobility degradation induced by remote charge scattering
Ji, Z.; Zhang, J.F.; Zhang, W.; Groeseneken, Guido; Pantisano, Luigi; De Gendt, Stefan; Heyns, Marc (2009) -
An investigation of field reduction effect on NBTI parameter characterization and lifetime prediction using a constant field stress method
Zhou, L.; Bo, T.; Ji, Z.; Yang, H.; Xu, H.; Liu, Q.; Simoen, Eddy; Wang, X.; Ma, X.; Li, Y.; Yin, H.; Du, A.; Zhao, C.; Wang, W. (2020) -
Defect loss: a new concept for reliability of MOSFETs
Duan, M.; Zhang, J. F.; Ji, Z.; Zhang, W.; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2012) -
Development of a technique for characterizing bias temperature unstability-induced device-to-device variation at SRAM-relevant conditions
Duan, M.; Zhang, J. F.; Ji, Z.; Zhang, W. D.; Kaczer, Ben; Schram, Tom; Ritzenthaler, Romain; Groeseneken, Guido; Asenov, A. (2014) -
Dominant layer for stress-induced positive charges in Hf-based gate stacks
Zhang, Jian F.; Chang, M.H.; Ji, Z.; Lin, L.; Ferain, Isabelle; Groeseneken, Guido; Pantisano, Luigi; De Gendt, Stefan; Heyns, Marc (2008) -
Energy distribution of positive charges in high-k dielectric
Hatta, S. W. M.; Ji, Z.; Zhang, J. F.; Zhang, W.D.; Soin, N.; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2014) -
Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM
Duan, M.; Zhang, J. F.; Manut, A.; Ji, Z.; Zhang, W.; Asenov, A.; Gerrer, L.; Reid, D.; Razaidi, H.; Vigar, D.; Chandra, V.; Aitken, R.; Kaczer, Ben; Groeseneken, Guido (2015) -
Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM ( a-VMCO) by RTN and CVS techniques for memory window improvement
Ma, Jigang; Chai, Zheng; Zhang, Weidong; Govoreanu, Bogdan; Zhang, Jiang F.; Ji, Z.; Benbakhti, B.; Groeseneken, Guido; Jurczak, Malgorzata (2016) -
Insights into the effect of TiN thickness scaling on DC and AC NBTI characteristics in replacement metal gate pMOSFETs
Zhou, L.; Liu, Q.; Yang, H.; Ji, Z.; Xu, H.; Tang, B.; Simoen, Eddy; Jiang, H.; Luo, Y.; Wang, X.; Ma, X.; Li, Y.; Luo, J.; Yin, H.; Zhao, C.; Wang, W. (2020) -
Interaction between hot carrier aging and PBTI degradation in nMOSFETs: characterization, modelling and lifetime prediction
Meng, D.; Zhang, J. F.; Zhang, J. C.; Zhang, W.; Ji, Z.; Benbakhti, B.; Zheng, X. F.; Hao, Y.; Vigar, D.; Adamu-Lema, F.; Chandra, V.; Aitken, R.; Kaczer, Ben; Groeseneken, Guido; Asenov, A. (2017) -
Interface states beyond band gap and their impact on charge carrier mobility in MOSFETs
Ji, Z.; Zhang, J. F.; Zhang, W. D.; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2012) -
Investigation of preexisting and generated defects in nonfilamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution
Ma, Jigang; Chai, Zheng; Zhang, Wei Dong; Zhang, J. F.; Ji, Z.; Benbakhti, Brahim; Govoreanu, Bogdan; Simoen, Eddy; Goux, Ludovic; Belmonte, Attilio; Degraeve, Robin; Kar, Gouri Sankar; Jurczak, Gosia (2018) -
Key issues and techniques for characterizing time-dependent device-to-device variation of SRAM
Duan, M.; Zhang, J. F.; Ji, Z.; Ma, J. G.; Zhang, W.; Kaczer, Ben; Schram, Tom; Ritzenthaler, Romain; Groeseneken, Guido; Asenov, A. (2013) -
Negative bias temperature instability lifetime prediction: problems and solutions
Ji, Z.; Hatta, S. F. W. M.; Zhang, J. F.; Ma, G. M.; Zhang, W.; Soin, N.; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2013) -
New insights into defect loss, slowdown, and device lifetime enhancement
Duan, M.; Zhang, J. F.; Ji, Z.; Zhang, W. D.; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2013) -
New insights into defect loss, slowdown, and device lifetime enhancement
Duan, M.; Zhang, J. F.; Ji, Z.; Zhang, W. D.; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2013) -
On the activation and passivation of precursors for process-induced positive charges in Hf-dielectric stacks
Chang, M.H.; Zhao, C.Z.; Ji, Z.; Zhang, J.F.; Groeseneken, Guido; Pantisano, Luigi; De Gendt, Stefan; Heyns, Marc (2009)