Browsing by author "Huffman, Craig"
Now showing items 1-20 of 23
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Advanced organic polymers for the aggressive scaling of low-k materials
Pantouvaki, Marianna; Huffman, Craig; Zhao, Larry; Heylen, Nancy; Ono, Y; Nakajima, M; Nakatani, K; Beyer, Gerald; Baklanov, Mikhaïl (2011) -
Advanced organic polymers for the aggressive scaling of low-k materials
Pantouvaki, Marianna; Zhao, Larry; Huffman, Craig; Heylen, Nancy; Ono, Yukiharu; Nakajima, Michio; Nakatani, Koji; Beyer, Gerald; Baklanov, Mikhaïl (2010) -
Demonstration of scaled 0.099μm² FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology
Veloso, Anabela; Demuynck, Steven; Ercken, Monique; Goethals, Mieke; Locorotondo, Sabrina; Lazzarino, Frederic; Altamirano Sanchez, Efrain; Huffman, Craig; De Keersgieter, An; Brus, Stephan; Demand, Marc; Struyf, Herbert; De Backer, Johan; Hermans, Jan; Delvaux, Christie; Baudemprez, Bart; Vandeweyer, Tom; Van Roey, Frieda; Baerts, Christina; Goossens, Danny; Dekkers, Harold; Ong, Patrick; Heylen, Nancy; Kellens, Kristof; Volders, Henny; Hikavyy, Andriy; Vrancken, Christa; Rakowski, Michal; Verhaegen, Staf; Dusa, Mircea; Romijn, Leon; Pigneret, Charles; van Dijk, Andre; Schreutelkamp, Rob; Cockburn, Andrew; Gravey, Virginie; Meiling, H.; Hultermans, B.; Lok, S.; Shah, K.; Rajagopalan, R.; Gelatos, J.; Richard, Olivier; Bender, Hugo; Vandenberghe, Geert; Beyer, Gerald; Absil, Philippe; Hoffmann, Thomas Y.; Ronse, Kurt; Biesemans, Serge (2009-12) -
Dielectric reliability of 50nm 1/2 pitch structures in Aurora® LK
Demuynck, Steven; Kim, Hongun; Huffman, Craig; Darnon, Maxime; Struyf, Herbert; Versluijs, Janko; Claes, Martine; Vereecke, Guy; Volders, Henny; Heylen, Nancy; Kellens, Kristof; Beyer, Gerald (2008) -
Dielectric reliability of 50nm half pitch structures in Aurora® LK
Demuynck, Steven; Kim, Honggun; Huffman, Craig; Darnon, Maxime; Struyf, Herbert; Versluijs, Janko; Claes, Martine; Vereecke, Guy; Verdonck, Patrick; Volders, Henny; Heylen, Nancy; Kellens, Kristof; De Roest, David; Sprey, Hessel; Beyer, Gerald (2009) -
EUV lithography implementation on contact and metal interconnect level of a 22nm node 0.099um2 6T-SRAM cell
Goethals, Mieke; Demuynck, Steven; Van Roey, Frieda; Baudemprez, Bart; Hermans, Jan; Huffman, Craig; Lazzarino, Frederic; Pollentier, Ivan; Hendrickx, Eric; Jonckheere, Rik; Verhaegen, Staf; Veloso, Anabela; Vandenberghe, Geert; Ronse, Kurt (2009) -
Full-field EUV and immersion lithography integration in 0.186μm² FinFET 6T-SRAM cell
Veloso, Anabela; Demuynck, Steven; Ercken, Monique; Goethals, Mieke; Demand, Marc; de Marneffe, Jean-Francois; Altamirano Sanchez, Efrain; De Keersgieter, An; Delvaux, Christie; De Backer, Johan; Brus, Stephan; Hermans, Jan; Baudemprez, Bart; Van Roey, Frieda; Lorusso, Gian; Baerts, Christina; Goossens, Danny; Vrancken, Christa; Mertens, Sofie; Versluijs, Janko; Truffert, Vincent; Huffman, Craig; Laidler, David; Heylen, Nancy; Ong, Patrick; Parvais, Bertrand; Rakowski, Michal; Verhaegen, Staf; Hikavyy, Andriy; Meiling, H.; Hultermans, B.; Romijn, L.; Pigneret, C.; Lok, S.; Van Dijk, A.; Shah, K.; Noori, A.; Gelatos, J.; Arghavani, R.; Schreutelkamp, Rob; Boelen, Pieter; Richard, Olivier; Bender, Hugo; Witters, Liesbeth; Collaert, Nadine; Rooyackers, Rita; Absil, Philippe; Lauwers, Anne; Jurczak, Gosia; Hoffmann, Thomas Y.; Vanhaelemeersch, Serge; Cartuyvels, Rudi; Ronse, Kurt; Biesemans, Serge (2008) -
High yield sub-0.1μm² 6T-SRAM Cells, featuring high-k/metal-gate Finfet devices, double gate patterning, a novel Fin etch strategy, full-field EUV lithography and optimized junction design & layout
Horiguchi, Naoto; Demuynck, Steven; Ercken, Monique; Locorotondo, Sabrina; Lazzarino, Frederic; Altamirano Sanchez, Efrain; Huffman, Craig; Brus, Stephan; Demand, Marc; Struyf, Herbert; De Backer, Johan; Hermans, Jan; Delvaux, Christie; Vandeweyer, Tom; Baerts, Christina; Mannaert, Geert; Truffert, Vincent; Verluijs, j; Alaerts, Wilfried; Dekkers, Harold; Ong, Patrick; Heylen, Nancy; Kellens, Kristof; Volders, Henny; Hikavyy, Andriy; Vrancken, Christa; Rakowski, Michal; Verhaegen, Staf; Vandenberghe, Geert; Beyer, Gerald; Lauwers, Anne; Absil, Philippe; Hoffmann, Thomas Y.; Ronse, Kurt; Biesemans, Serge (2010) -
Impact of plasma exposure on organic low-k materials
Smirnov, Evgeny; Ferchichi, Abdelkarim; Huffman, Craig; Baklanov, Mikhaïl (2010) -
Integration and dielectric reliability of 30nm 1/2 pitch structures in Aurora LK HM
Demuynck, Steven; Huffman, Craig; Claes, Martine; Suhard, Samuel; Versluijs, Janko; Volders, Henny; Heylen, Nancy; Kellens, Kristof; Croes, Kristof; Struyf, Herbert; Vereecke, Guy; Verdonck, Patrick; De Roest, David; Beynet, Julien; Sprey, Hessel; Beyer, Gerald (2009) -
Integration and dielectric reliability of 30nm ½ pitch structures in Aurora® LK HM
Demuynck, Steven; Huffman, Craig; Claes, Martine; Suhard, Samuel; Versluijs, Janko; Volders, Henny; Heylen, Nancy; Kellens, Kristof; Croes, Kristof; Struyf, Herbert; Vereecke, Guy; Verdonck, Patrick; De Roest, David; Beynet, Julien; Sprey, Hessel; Beyer, Gerald (2010) -
Integration of an organic ultra low-k (k=2.2) material
Pantouvaki, Marianna; Zhao, Larry; Huffman, Craig; Heylen, Nancy; Ferchichi, Abdelkarim; Ono, Y.; Nakajima, M.; Nakatani, K.; Struyf, Herbert; Beyer, Gerald; Baklanov, Mikhaïl (2009) -
Integration of an organic ultra low-k (k=2.2) material
Pantouvaki, Marianna; Zhao, Larry; Huffman, Craig; Heylen, Nancy; Ferchichi, Abdelkarim; Ono, Y.; Nakajima, M.; Nakatani, K.; Struyf, Herbert; Beyer, Gerald; Baklanov, Mikhaïl (2010) -
Integration of porogen-based low-k films: influence of capping layer thickness and long thermal anneals on low-k damage and reliability
De Roest, David; Vereecke, Bart; Huffman, Craig; Heylen, Nancy; Croes, Kristof; Arai, H; Takamure, N; Beynet, Julien; Sprey, Hessel; Matsushita, K; Kobayashi, N; Verdonck, Patrick; Demuynck, Steven; Beyer, Gerald; Tokei, Zsolt (2009) -
Integration of porogen-based low-k films: influence of capping layer thickness and long thermal anneals on low-k damage and reliability
De Roest, David; Vereecke, Bart; Huffman, Craig; Heylen, Nancy; Croes, Kristof; Arai, H.; Takamure, N.; Beynet, Julien; Sprey, Hessel; Matsushita, K.; Kobayashi, N.; Verdonck, Patrick; Demuynck, Steven; Beyer, Gerald; Tokei, Zsolt (2009) -
Metal hard-mask based double patterning for 22nm and beyond
Struyf, Herbert; de Marneffe, Jean-Francois; Goossens, Danny; Hendrickx, Dirk; Huffman, Craig; Kunnen, Eddy; Lazzarino, Frederic; Milenin, Alexey; Shamiryan, Denis; Urbanowicz, Adam; Vandervorst, Alain; Boullart, Werner (2010) -
Plasma process optimization for dual pattern 30nm half pitch interconnect application
Huffman, Craig; de Marneffe, Jean-Francois; Demuynck, Steven; Goossens, Danny; Beyer, Gerald; Struyf, Herbert (2009) -
Plasma sealing of advanced organic low-k material
Smirnov, Evgeny; Pantouvaki, Marianna; Huffman, Craig; Vanstreels, Kris; Baklanov, Mikhaïl (2011) -
Preface to the Focus Issue on Atomic Layer Etch and Clean
Huffman, Craig; Hess, D.W.; de Marneffe, Jean-Francois; Sekine, M.; De Gendt, Stefan (2015) -
The small-gap technique: understanding an ion-shading method for plasma-surface interactions study
de Marneffe, Jean-Francois; Jarnac, Amelie; Conard, Thierry; Hendrickx, Dirk; Huffman, Craig; Kunnen, Eddy; Lazzarino, Frederic; Milenin, Alexey; Shamiryan, Denis; Struyf, Herbert; Vandervorst, Alain; Urbanowicz, Adam; Boullart, Werner (2010)