Browsing by author "Meunier-Beillard, Philippe"
Now showing items 1-20 of 21
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A new technique to fabricate ultra-shallow-junctions, combining in-situ vapour HCl etching and in-situ doped epitaxial SiGe re-growth
Loo, Roger; Caymax, Matty; Meunier-Beillard, Philippe; Peytier, Ivan; Holsteyns, Frank; Kubicek, Stefan; Verheyen, Peter; Lindsay, Richard; Richard, Olivier (2004) -
A new technique to fabricate Ultra-Shallow-Junctions, combining in-situ vapour HCl etching and in-situ doped epitaxial SiGe re-growth
Loo, Roger; Caymax, Matty; Meunier-Beillard, Philippe; Peytier, Ivan; Holsteyns, Frank; Kubicek, Stefan; Verheyen, Peter; Lindsay, Richard; Richard, Olivier (2003-01) -
A novel fully self-aligned SiGe:C HBT architecture featuring a single step epitaxial collector-base process
Donkers, Johan; Kramer, Mark; Van Huylenbroeck, Stefaan; Choi, Li Jen; Meunier-Beillard, Philippe; Boccardi, Guillaume; van Noort, W.; Hurkx, G.A.M.; Vanhoucke, Tony; Sibaja-Hernandez, Arturo; Vleugels, Frank; Winderickx, Gillis; Kunnen, Eddy; Peeters, Stefan; Baute, Debbie; De Vos, Brecht; Vandeweyer, Tom; Loo, Roger; Venegas, Rafael; Pijper, R.; Decoutere, Stefaan; Hijzen, Erwin (2007) -
A novel isolation scheme featuring cavities in the collector for a high-speed 0.13μm SiGe:C BiCMOS technology
Choi, Li Jen; Van Huylenbroeck, Stefaan; Donkers, Johan; van Noort, Wibo; Piontek, Andreas; Sibaja-Hernandez, Arturo; Meunier-Beillard, Philippe; Neuilly, Francois; Kunnen, Eddy; Leray, Philippe; Vleugels, Frank; Venegas, Rafael; Hijzen, Erwin; Decoutere, Stefaan (2007) -
Analysis of junctions formed in strained Si/SiGe substrates
Eneman, Geert; Simoen, Eddy; Lauwers, Anne; Lindsay, Richard; Verheyen, Peter; Delhougne, Romain; Loo, Roger; Caymax, Matty; Meunier-Beillard, Philippe; Demuynck, Steven; De Meyer, Kristin; Vandervorst, Wilfried (2004) -
Development of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer
Delhougne, Romain; Meunier-Beillard, Philippe; Caymax, Matty; Loo, Roger; Vandervorst, Wilfried (2003) -
Development of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer
Delhougne, Romain; Meunier-Beillard, Philippe; Caymax, Matty; Loo, Roger; Vandervorst, Wilfried (2004) -
Effects of boron and germanium base profiles on SiGe and SiGe:C BJT characteristics
Sadovnikov, A.; Printy, C.; Budri, T.; Loo, Roger; Meunier-Beillard, Philippe; El-Diwany, M. (2002) -
Fabrication of strained Si NMOS transistors on thin buffer layers with selective and non-selective epitaxial growth techniques
Eneman, Geert; Verheyen, Peter; Rooyackers, Rita; Delhougne, Romain; Loo, Roger; Caymax, Matty; Meunier-Beillard, Philippe; De Meyer, Kristin; Vandervorst, Wilfried (2004) -
Fabrication of strained Si NMOS transistors on thin buffer layers with selective and non-selective epitaxial growth techniques
Eneman, Geert; Verheyen, Peter; Rooyackers, Rita; Delhougne, Romain; Loo, Roger; Caymax, Matty; Meunier-Beillard, Philippe; De Meyer, Kristin; Vandervorst, Wilfried (2004) -
Ge island evolution during growth, in-situ anneal, and Si capping in an industrial CVD reactor
Loo, Roger; Meunier-Beillard, Philippe; Dentel, D.; Goryll, M.; Vanhaeren, Danielle; Vescan, L.; Bender, Hugo; Caymax, Matty; Vandervorst, Wilfried (2001) -
In-line and non-destructive analysis of epitaxial Si1-x-yGexCy
Loo, Roger; Delhougne, Romain; Geenen, Luc; Brijs, Bert; Vandervorst, Wilfried; Meunier-Beillard, Philippe; Koumoto, T. (2004) -
In-line and non-destructive analysis of epitaxial Si1-x-yGexCy by spectroscopic ellipsometry and comparison with other established techniques
Loo, Roger; Meunier-Beillard, Philippe; Delhougne, Romain; Koumoto, T.; Geenen, Luc; Brijs, Bert; Vandervorst, Wilfried (2003) -
N-2 as carrier gas: an alternative to H-2 for enhanced epitaxy of Si, SiGe and SiGe:C
Meunier-Beillard, Philippe; Caymax, Matty; Van Nieuwenhuysen, Kris; Doumen, Geert; Brijs, Bert; Hopstaken, M.; Geenen, Luc; Vandervorst, Wilfried (2004) -
N2 as alternative to H2 as carrier gas in CVD Si-epitaxy; double win-win situation
Meunier-Beillard, Philippe; Caymax, Matty; Van Hoeymissen, Jan (2003) -
N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C
Meunier-Beillard, Philippe; Caymax, Matty; Van Nieuwenhuysen, Kris; Doumen, Geert; Brijs, Bert; Hopstaken, M.; Geenen, Luc; Vandervorst, Wilfried (2003) -
On the use of SiGe spike in the emitter to improve the fTxBVCEO product of high-speed SiGe HBTs
Choi, Li Jen; Van Huylenbroeck, Stefaan; Piontek, Andreas; Sibaja-Hernandez, Arturo; Kunnen, Eddy; Meunier-Beillard, Philippe; van Noort, Wibo; Hijzen, Erwin; Decoutere, Stefaan (2007) -
Selective epitaxial deposition of strained silicon: a simple and effective method for fabricating high performance MOSFET devices
Delhougne, Romain; Eneman, Geert; Caymax, Matty; Loo, Roger; Meunier-Beillard, Philippe; Verheyen, Peter; Vandervorst, Wilfried; De Meyer, Kristin; Heyns, Marc (2004) -
(Selective) epitaxial growth of strained Si to fabricate low cost and high performance CMOS devices
Loo, Roger; Delhougne, Romain; Meunier-Beillard, Philippe; Caymax, Matty; Verheyen, Peter; Eneman, Geert; De Wolf, Ingrid; Janssens, Tom; Benedetti, Alessandro; De Meyer, Kristin; Vandervorst, Wilfried; Heyns, Marc (2004) -
Strained Si and strained SiGe fabrication schemes using (selective) epitaxial growth in a RPCVD system
Loo, Roger; Delhougne, Romain; Meunier-Beillard, Philippe; Caymax, Matty (2003)