Browsing by author "Rohr, Erika"
Now showing items 1-20 of 42
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8Å Tinv gate-first dual channel technology achieving low-Vt high performance CMOS
Witters, Liesbeth; Takeoka, Shinji; Yamaguchi, Shinpei; Hikavyy, Andriy; Shamiryan, Denis; Cho, Moon Ju; Chiarella, Thomas; Ragnarsson, Lars-Ake; Loo, Roger; Kerner, Christoph; Crabbe, Yvo; Franco, Jacopo; Tseng, Joshua; Wang, Wei-E; Rohr, Erika; Schram, Tom; Richard, Olivier; Bender, Hugo; Biesemans, Serge; Absil, Philippe; Hoffmann, Thomas Y. (2010) -
A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack
Chang, Vincent; Ragnarsson, Lars-Ake; Pourtois, Geoffrey; O'Connor, Robert; Adelmann, Christoph; Van Elshocht, Sven; Delabie, Annelies; Swerts, Johan; Van der Heyden, Nikolaas; Conard, Thierry; Cho, Hag-Ju; Akheyar, Amal; Mitsuhashi, Riichirou; Witters, Thomas; O'Sullivan, Barry; Pantisano, Luigi; Rohr, Erika; Lehnen, Peer; Kubicek, Stefan; Schram, Tom; De Gendt, Stefan; Absil, Philippe; Biesemans, Serge (2007) -
ALD deposition of high-k and metal gate stacks for advanced CMOS applications
Heyns, Marc; Beckx, Stephan; Caymax, Matty; Claes, Martine; De Gendt, Stefan; Degraeve, Robin; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Hooker, Jacob; Houssa, Michel; Kwak, Dong Hwa; Lander, Rob; Lujan, Guilherme; Maes, Jan; Niwa, Masaaki; Pantisano, Luigi; Puurunen, R.; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Van Elshocht, Sven; Vandervorst, Wilfried (2004) -
Band edge work function metal gates using PEALD TaCN electrodes
Maes, Jan; Swerts, Johan; Pierreux, Dieter; Machkaoutsan, Vladimir; Marcus, Steven; Milligan, Brennan; Schram, Tom; Ragnarsson, Lars-Ake; Cacciato, Antonio; Rohr, Erika; Rothschild, Aude; Hendrickx, Paul; Breuil, Laurent; Van den Bosch, Geert (2009) -
Challenges with respect to high-k/metal gate stack etching and cleaning
Vos, Rita; Arnauts, Sophia; Bovie, Inge; Onsia, Bart; Garaud, Sylvain; Xu, Kaidong; Yu, HongYu; Kubicek, Stefan; Rohr, Erika; Schram, Tom; Veloso, Anabela; Conard, Thierry; Leunissen, Peter; Mertens, Paul (2007) -
Cleaning and strip requirement for metal gate based CMOS integration
Schram, Tom; Sebaai, Farid; Claes, Martine; Vos, Rita; Wada, Masayuli; Rohr, Erika; Kubicek, Stefan (2009) -
Cleaning and strip requirements for metal gate based CMOS integration
Schram, Tom; Sebaai, Farid; Claes, Martine; Vos, Rita; Wada, Masayuki; Albert, Johan; Rohr, Erika; Kubicek, Stefan (2009) -
Dual-channel technology with Cap-free single metal gate for high performance CMOS in gate-first and gate-last integration
Witters, Liesbeth; Mitard, Jerome; Veloso, Anabela; Hikavyy, Andriy; Franco, Jacopo; Kauerauf, Thomas; Cho, Moon Ju; Schram, Tom; Sebaai, Farid; Yamaguchi, Shinpei; Takeoka, S.; Fukuda, Masahiro; Wang, Wei-E; Duriez, Blandine; Eneman, Geert; Loo, Roger; Kellens, Kristof; Tielens, Hilde; Favia, Paola; Rohr, Erika; Hellings, Geert; Bender, Hugo; Roussel, Philippe; Crabbe, Yvo; Brus, Stephan; Mannaert, Geert; Kubicek, Stefan; Devriendt, Katia; De Meyer, Kristin; Ragnarsson, Lars-Ake; Steegen, An; Horiguchi, Naoto (2011) -
Effective metal gate work function modification by ion implantation with W-based gate stack
Li, Zilan; Schram, Tom; Kerner, Christoph; Witters, Thomas; Singanamalla, Raghunath; Pourtois, Geoffrey; Paraschiv, Vasile; Hoffmann, Thomas Y.; Rohr, Erika; Absil, Philippe; De Gendt, Stefan; De Meyer, Kristin (2008) -
Effectiveness of nitridation of hafnium silicate dielectrics: a comparison between thermal and plasma nitridation
O'Sullivan, Barry; Kaushik, Vidya; Everaert, Jean-Luc; Trojman, Lionel; Ragnarsson, Lars-Ake; Pantisano, Luigi; Rohr, Erika; De Gendt, Stefan; Heyns, Marc (2007) -
Electrical and physical characterization of MOSFETs with MBE grown La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow
Conard, Thierry; Pantisano, Luigi; Claes, Martine; Demand, Marc; Deweerd, Wim; De Gendt, Stefan; Houssa, Michel; Lujan, Guilherme; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Hooker, Jacob; Rittersma, Chris; Fompeyrinne, J.; Loquet, J.P. (2005) -
Gate-last vs. gate-first technology for aggressively scaled EOT Logic/RF CMOS
Veloso, Anabela; Ragnarsson, Lars-Ake; Cho, Moon Ju; Devriendt, Katia; Kellens, Kristof; Sebaai, Farid; Suhard, Samuel; Brus, Stephan; Crabbe, Yvo; Schram, Tom; Rohr, Erika; Paraschiv, Vasile; Eneman, Geert; Kauerauf, Thomas; Dehan, Morin; Hong, Sug-Hun; Yamaguchi, Shinpei; Takeoka, Shinji; Higuchi, Yuichi; Tielens, Hilde; Van Ammel, Annemie; Favia, Paola; Bender, Hugo; Franquet, Alexis; Conard, Thierry; Li, X.; Pey, K.-L.; Struyf, Herbert; Mertens, Paul; Absil, Philippe; Horiguchi, Naoto; Hoffmann, Thomas Y. (2011) -
High performance Si.45Ge.55 implant free quantum well FET featuring low temperature process, eSiGe stressor and transversal strain relaxation
Yamaguchi, Shinpei; Witters, Liesbeth; Mitard, Jerome; Eneman, Geert; Hellings, Geert; Fukuda, Masahiro; Hikavyy, Andriy; Loo, Roger; Veloso, Anabela; Crabbe, Yvo; Rohr, Erika; Favia, Paola; Bender, Hugo; Takeoka, S.; Vellianitis, Georgios; Wang, Wei-E; Ragnarsson, Lars-Ake; De Meyer, Kristin; Steegen, An; Horiguchi, Naoto (2011) -
High-k gate stack engineering – towards meeting low standby power and high performance targets
De Gendt, Stefan; Brunco, David; Caymax, Matty; Conard, Thierry; Date, Lucien; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Houssa, Michel; Hyun, Sangjin; Kaushik, Vidya; Kubicek, Stefan; Maes, Jan; Pantisano, Luigi; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Shimamoto, Y.; Sleeckx, Erik; Vandervorst, Wilfried; Van Elshocht, Sven; Yamada, Naoki; Witters, Thomas; Zhao, Chao; Zimmerman, Paul; Heyns, Marc (2005) -
Impact of thinning and through silicon via proximity on high-k / metal gate first CMOS performance
Mercha, Abdelkarim; Redolfi, Augusto; Stucchi, Michele; Minas, Nikolaos; Van Olmen, Jan; Thangaraju, Sarasvathi; Velenis, Dimitrios; Domae, Shinichi; Yang, Yu; Katti, Guruprasad; Labie, Riet; Okoro, Chukwudi; Zhao, Ming; Asimakopoulos, Panagiotis; De Wolf, Ingrid; Chiarella, Thomas; Schram, Tom; Rohr, Erika; Van Ammel, Annemie; Jourdain, Anne; Ruythooren, Wouter; Armini, Silvia; Radisic, Alex; Philipsen, Harold; Heylen, Nancy; Kostermans, Maarten; Jaenen, Patrick; Sleeckx, Erik; Sabuncuoglu Tezcan, Deniz; Debusschere, Ingrid; Soussan, Philippe; Perry, Dan; Van der Plas, Geert; Cho, Jong Hoon; Marchal, Pol; Travaly, Youssef; Beyne, Eric; Biesemans, Serge; Swinnen, Bart (2010) -
Integration of high-K gate dielectrics - wet etch, cleaning and surface conditioning
De Gendt, Stefan; Beckx, Stephan; Caymax, Matty; Claes, Martine; Conard, Thierry; Delabie, Annelies; Deweerd, Wim; Hellin, David; Kraus, Harald; Onsia, Bart; Paraschiv, Vasile; Puurunen, Riikka; Rohr, Erika; Snow, Jim; Tsai, Wilman; Van Doorne, Patrick; Van Elshocht, Sven; Vertommen, Johan; Witters, Thomas; Heyns, Marc (2004) -
Integration of PVD ruthenium as a pMOS metal gate in scaled planar devices: workfunction and electrical performance on HfO2
Deweerd, Wim; Schram, Tom; Van Hoornick, Nausikaa; Witters, Thomas; Lisoni, Judit; Rohr, Erika; De Gendt, Stefan; Heyns, Marc; Schaekers, Marc; Richard, Olivier; Wickramanayaka, Sunil; Yamada, N.; Brunco, David (2005) -
Low VT CMOS using doped Hf-based oxides, TaC-based metals and laser-only anneal
Kubicek, Stefan; Schram, Tom; Paraschiv, Vasile; Vos, Rita; Demand, Marc; Adelmann, Christoph; Witters, Thomas; Nyns, Laura; Ragnarsson, Lars-Ake; Yu, HongYu; Veloso, Anabela; Singanamalla, Raghunath; Kauerauf, Thomas; Rohr, Erika; Brus, Stephan; Vrancken, Christa; Chang, Vincent; Mitsuhashi, Riichirou; Akheyar, Amal; Cho, Hag-Ju; Hooker, Jacob; O'Sullivan, Barry; Chiarella, Thomas; Kerner, Christoph; Delabie, Annelies; Van Elshocht, Sven; De Meyer, Kristin; De Gendt, Stefan; Absil, Philippe; Hoffmann, Thomas Y.; Biesemans, Serge (2007) -
Low VT metal-gate/high-k nMOSFETs - PBTI dependence and VT tune-ability on La/Dy-capping layer locations and laser annealing conditions
Chang, Shou-Zen; Hoffmann, Thomas Y.; Yu, HongYu; Aoulaiche, Marc; Rohr, Erika; Adelmann, Christoph; Kaczer, Ben; Delabie, Annelies; Favia, Paola; Van Elshocht, Sven; Kubicek, Stefan; Schram, Tom; Witters, Thomas; Ragnarsson, Lars-Ake; Wang, Xin Peng; Cho, Hag-Ju; Mueller, Markus; Chiarella, Thomas; Absil, Philippe; Biesemans, Serge (2008) -
Low-frequency noise analysis of the impact of an LaO cap layer in HfSiON/Ta2C gate stack nMOSFETs
Simoen, Eddy; Akheyar, Amal; Rohr, Erika; Mercha, Abdelkarim; Claeys, Cor (2009)