Browsing Conference contributions by imec author "efc61bf769711286fc005bc674fd92a81c50f7c6"
Now showing items 1-20 of 35
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80nm tall thermally stable cost effective FinFETs for advanced DRAM periphery devices for AI/ML and Automotive applications
Spessot, Alessio; Ritzenthaler, Romain; Dentoni Litta, Eugenio; Dupuy, Emmanuel; O'Sullivan, Barry; Bastos, Joao; Capogreco, Elena; Miyaguchi, Kenichi; Machkaoutsan, Vladimir; Yoon, Younggwang; Fazan, Pierre; Horiguchi, Naoto (2020) -
Analysis of the pre-epi bake conditions on the defect creation in recessed Si1-xGex S/D junctions
Bargallo Gonzalez, Mireia; Thomas, Nicole; Simoen, Eddy; Verheyen, Peter; Hikavyy, Andriy; Leys, Frederik; Okuno, Yasutoshi; Vissouvanadin Soubaretty, Bertrand; Van Daele, Benny; Geenen, Luc; Loo, Roger; Claeys, Cor; Machkaoutsan, Vladimir; Tomasini, P.; Thomas, S.G.; Lu, J.P.; Weijtmans, J.W.; Wise, R. (2007) -
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery
Bastos, Joao; O'Sullivan, Barry; Franco, Jacopo; Tyaginov, Stanislav; Truijen, Brecht; Vaisman Chasin, Adrian; Degraeve, Robin; Kaczer, Ben; Ritzenthaler, Romain; Capogreco, Elena; Dentoni Litta, Eugenio; Spessot, Alessio; Higashi, Yusuke; Yoon, Younggwang; Machkaoutsan, Vladimir; Fazan, Pierre; Horiguchi, Naoto (2022) -
Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain
Amat, E.; Rodriguez, R.; Gonzalez, Mario; Martin-Martinez, J.; Nafria, M.; Aymerich, X.; Machkaoutsan, Vladimir; Bauer, M.; Verheyen, Peter; Simoen, Eddy (2010) -
Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain
Amat, Esteve; Rodriguez, Rosana; Bargallo Gonzalez, Mireia; Martin Martinez, Javier; Nafria, Montse; Aymerich, Xavier; Machkaoutsan, Vladimir; Bauer, M.; Verheyen, (2010) -
Cost effective FinFET platform for stand alone DRAM 1Y and beyond memory periphery
Spessot, Alessio; Sharan, Neha; Oh, Hyungrock; Ritzenthaler, Romain; Dentoni Litta, Eugenio; Mallik, Arindam; De Keersgieter, An; Parvais, Bertrand; Sherazi, Yasser; Machkaoutsan, Vladimir; Kim, Cheolgyu; Fazan, Pierre; Mocuta, Dan; Mocuta, Anda; Horiguchi, Naoto (2018-01) -
Electrical performance comparison of embedded Si1-xGex source/drain junctions processed in 200 mm and 300 mmEpi-reactors
Bargallo Gonzalez, Mireia; Simoen, Eddy; Hikavyy, Andriy; Verheyen, Peter; Loo, Roger; Caymax, Matty; Machkaoutsan, Vladimir; Tomasini, P.; Thomas, S.G.; Wise, R.; Claeys, Cor (2008) -
Extending gate dielectric scaling by using ALD HfO2/SrTiO3 stacks
Maes, Jan; Machkaoutsan, Vladimir; Pierreux, Dieter; Blomberg, Tom; Swerts, Johan; Schram, Tom; Adelmann, Christoph; Delabie, Annelies; Van Elshocht, Sven; Popovici, Mihaela Ioana; Conard, Thierry; Tseng, Joshua; Ragnarsson, Lars-Ake (2010) -
Extreme scaled gate dielectrics by using ALD Hf-based composite materials
Pierreux, Dieter; Machkaoutsan, Vladimir; Tois, E.; Swerts, Johan; Schram, Tom; Adelmann, Christoph; Van Elshocht, Sven; Tseng, Joshua; Ragnarsson, Lars-Ake; Maes, Jan (2009) -
Extreme scaled gate dielectrics by using ALD HfO2/SrTiO3 composite structures
Pierreux, Dieter; Machkaoutsan, Vladimir; Tois, E.; Swerts, Johan; Schram, Tom; Adelmann, Christoph; Van Elshocht, Sven; Popovici, Mihaela Ioana; Conard, Thierry; Tseng, Joshua; Ragnarsson, Lars-Ake; Maes, Jan (2009) -
Gate stack engineering to enhance high- $j/metal gate reliability for DRAM I/O applications
O'Sullivan, Barry; Ritzenthaler, Romain; Simoen, Eddy; Dentoni Litta, Eugenio; Schram, Tom; Vaisman Chasin, Adrian; Linten, Dimitri; Horiguchi, Naoto; Machkaoutsan, Vladimir; Fazan, Pierre; Li, Y (2017) -
Gate-stack engineered NBTI improvements in high-voltage logic-for-memory high-k/metal gate devices
O'Sullivan, Barry; Ritzenthaler, Romain; Rzepa, G; Wu, Zhicheng; Dentoni Litta, Eugenio; Richard, Olivier; Conard, Thierry; Machkaoutsan, Vladimir; Fazan, Pierre; Kim, Cheolgyu; Franco, Jacopo; Kaczer, Ben; Grasser, T; Spessot, Alessio; Linten, Dimitri; Horiguchi, Naoto (2019) -
High efficiency low temperature pre-epi clean method for advanced group IV epi processing
Machkaoutsan, Vladimir; Weeks, Doran; Bauer, Matthias; Maes, Jan; Tolle, John; Thomas, Shawn; Alian, AliReza; Hikavyy, Andriy; Loo, Roger (2012-09) -
High efficiency low temperature pre-epi clean method for advanced group IV epi processing
Machkaoutsan, Vladimir; Weeks, Doran; Bauer, Matthias; Maes, Jan; Tolle, John; Thomas, Shawn; Alian, AliReza; Hikavyy, Andriy; Loo, Roger (2012) -
Impact of fin height on bias temperature instability of memory periphery FinFETs
Boubaaya, Mohamed; O'Sullivan, Barry; Franco, Jacopo; Dentoni Litta, Eugenio; Ritzenthaler, Romain; Dupuy, Emmanuel; Machkaoutsan, Vladimir; Fazan, Pierre; Cheolgyu Kim, Cheolgyu; Spessot, Alessio; Linten, Dimitri; Horiguchi, Naoto (2019) -
Impact of the Ge content and the epitaxial thickness on the bandgap shrinkage induced leakage current of recessed Si1-xGex source/drain junctions
Bargallo Gonzalez, Mireia; Simoen, Eddy; Vissouvanadin Soubaretty, Bertrand; Thomas, Nicole; Taleb, Nadjib; Verheyen, Peter; Hikavyy, Andriy; Leys, Frederik; Richard, Olivier; Loo, Roger; Claeys, Cor; Machkaoutsan, Vladimir; Tomasini, P.; Thomas, S.G.; Lu, J.P; Wise, R. (2007) -
Impact of the pre-epi bake conditions in embedded Si1-xGex source/drain junctions
Bargallo Gonzalez, Mireia; Simoen, Eddy; Hikavyy, Andriy; Verheyen, Peter; Loo, Roger; Caymax, Matty; Machkaoutsan, Vladimir; Tomasini, Pierre; Thomas, S.G.; Wise, Rick; Claeys, Cor (2009) -
Influence of the highly-doped drain implantation and the window size on defect creation in p/n Si1-xGex source/drain junctions
Chowdhury, Mohammad Kamruzzaman; Vissouvanadin Soubaretty, Bertrand; Bargallo Gonzalez, Mireia; Bhouri, Nada; Verheyen, Peter; Hikavyy, Andriy; Richard, Olivier; Geypen, Jef; Bender, Hugo; Loo, Roger; Claeys, Cor; Simoen, Eddy; Machkaoutsan, Vladimir; Tomasini, P.; Thomas, S.G.; Lu, J.P.; Weijtmans, J.W.; Wise, R. (2008) -
Low temperature pre-epi Treatment: critical parameters to control interface contamination
Hikavyy, Andriy; Loo, Roger; Dhayalan, Sathish Kumar; Wostyn, Kurt; Rosseel, Erik; Simoen, Eddy; Machkaoutsan, Vladimir; Profijt, Harald; Tolle, John (2013) -
On the 1/f noise in pMOSFETs with embedded SiGe source/drain
Simoen, Eddy; Verheyen, Peter; Shickova, Adelina; Hikavyy, Andriy; Loo, Roger; Claeys, Cor; Machkaoutsan, Vladimir; Tomasini, P.; Thomas, S.G. (2007)