Browsing Articles by author "Kaczer, Ben"
Now showing items 1-20 of 226
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A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
Kaczer, Ben; Franco, Jacopo; Weckx, Pieter; Roussel, Philippe; Putcha, Vamsi; Bury, Erik; Simicic, Marko; Vaisman Chasin, Adrian; Linten, Dimitri; Parvais, Bertrand; Catthoor, Francky; Rzepa, Gerhard; Waltl, Michael; Grasser, Tibor (2018) -
A CMOS circuit for evaluating the NBTI over a wide frequency range
Fernandez-Garcia, Raul; Kaczer, Ben; Groeseneken, Guido (2009) -
A comparative study of the microstructure–dielectric properties of crystalline SrTiO3 ALD films obtained via seed layer approach
Popovici, Mihaela Ioana; Tomida, Kazuyuki; Swerts, Johan; Favia, Paola; Delabie, Annelies; Bender, Hugo; Adelmann, Christoph; Tielens, Hilde; Brijs, Bert; Kaczer, Ben; Pawlak, Malgorzata; Kim, Min-Soo; Altimime, Laith; Van Elshocht, Sven; Kittl, Jorge (2011) -
A comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimes
Crupi, F.; Kaczer, Ben; Degraeve, Robin; De Keersgieter, An; Groeseneken, Guido (2003) -
A consistent model for oxide trap profiling with the trap spectroscopy by charge injection and sensing (TSCIS) technique
Cho, Moon Ju; Degraeve, Robin; Roussel, Philippe; Govoreanu, Bogdan; Kaczer, Ben; Zahid, Mohammed; Simoen, Eddy; Arreghini, Antonio; Jurczak, Gosia; Van Houdt, Jan; Groeseneken, Guido (2010) -
A defect-centric analysis of the temperature dependence of the channel hot carrier degradation in nMOSFETs
Procel, Luis Miguel; Crupi, Felice; Lionel, Trojman; Franco, Jacopo; Kaczer, Ben (2016) -
A defect-centric perspective on channel hot carrier variability in nMOSFETs
Procel, Luis Miguel; Crupi, Felice; Franco, Jacopo; Trojman, Lionel; Kaczer, Ben; Wils, N.; Tuinhout, H. (2015) -
A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices
Buscemi, F.; Piccinini, E.; Vandelli, L.; Nardi, F.; Padovani, A.; Kaczer, Ben; Garbin, Daniele; Clima, Sergiu; Degraeve, Robin; Kar, Gouri Sankar; Tavanti, F.; Slassi, A.; Calzolari, A.; Larcher, L. (2023) -
A multi-energy level agnostic approach for defect generation during TDDB stress
Vici, Andrea; Degraeve, Robin; Kaczer, Ben; Franco, Jacopo; Van Beek, Simon; De Wolf, Ingrid (2022) -
A multi-energy level agnostic simulation approach to defect generation
Vici, Andrea; Degraeve, Robin; Kaczer, Ben; Franco, Jacopo; Van Beek, Simon; De Wolf, Ingrid (2021) -
A new method for the analysis of high-resolution SILC data
Aresu, Stefano; De Ceuninck, Ward; Knuyt, G.; Mertens, Jan; Manca, Jean; De Schepper, Luc; Degraeve, Robin; Kaczer, Ben; D'Olieslaeger, Marc; D'Haen, Jan (2003) -
A new TDDB reliability prediction methodology accounting for multiple SBD and wear out
Sahhaf, Sahar; Degraeve, Robin; Roussel, Philippe; Kaczer, Ben; Kauerauf, Thomas; Groeseneken, Guido (2009) -
A physically unclonable function using soft oxide breakdown featuring 0% native BER and 51.8fJ/bit in 40nm CMOS
Chuang, Kent; Bury, Erik; Degraeve, Robin; Kaczer, Ben; Linten, Dimitri; Verbauwhede, Ingrid (2019) -
A Pragmatic Model to Predict Future Device Aging
Brown, James; Tok, Kean Hong; Gao, Rui; Ji, Zhigang; Zhang, Weidong; Marsland, John S.; Chiarella, Thomas; Franco, Jacopo; Kaczer, Ben; Linten, Dimitri; Zhang, Jian Fu (2023) -
A rigorous study of measurement techniques for negative bias temperature instability
Grasser, T.; Wagner, P. J.; Hehenberger, P.; Goes, W.; Kaczer, Ben (2008-09) -
A sensitivity map-based approach to profile defects in MIM capacitors from I-V, C-V and G-V measurements
Padovani, Andrea; Kaczer, Ben; Pesic, Milan; Belmonte, Attilio; Popovici, Mihaela Ioana; Nyns, Laura; Linten, Dimitri; Afanasiev, Valeri; Shlyakhov, Ilya; Lee, Younggon; Park, Hokyung; Larcher, Luca (2019) -
A single pulse charge pumping technique for fast measurements of interface states
Lin, L.; Ji, Zhigang; Zhang, Jian Fu; Zhang, Wei Dong; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2011) -
Abrupt breakdown in dielectric/metal gate stacks: a potential reliability limitation?
Kauerauf, Thomas; Degraeve, Robin; Zahid, Mohammed; Cho, Moon Ju; Kaczer, Ben; Roussel, Philippe; Groeseneken, Guido; Maes, Herman; De Gendt, Stefan (2005) -
Accurate and robust noise-based trigger algorithm for soft breakdown detection in ultrathin gate dielectrics
Roussel, Philippe; Degraeve, Robin; Van den bosch, G.; Kaczer, Ben; Groeseneken, Guido (2001) -
Advanced PBTI reliability with 0.69nm EOT GdHfO gate dielectric
Cho, Moon Ju; Aoulaiche, Marc; Degraeve, Robin; Kaczer, Ben; Kauerauf, Thomas; Ragnarsson, Lars-Ake; Adelmann, Christoph; Van Elshocht, Sven; Hoffmann, Thomas Y.; Groeseneken, Guido (2011)