Browsing by Author "Akheyar, Amal"
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Publication 1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack
Journal article2009, Solid-State Electronics, (53) 11, p.1177-1182Publication A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.535-538Publication Analysis of silicide / diffusion contact resistance making use of transmission line stuctures
Proceedings paper2002, Silicon Materials - Processing, Characterization, and Reliability, 1/04/2002, p.53-58Publication Applications of Ni-based silicides to 45 nm CMOS and beyond
Proceedings paper2004, Silicon Front-End Junction Formation - Physics and Technology, 12/04/2004, p.31-42Publication Co-silicide, Co(Ni)-silicide and Ni-silicide to source/drain contact resistance
Proceedings paper2003, Advanced Short-Time Thermal Processing for Si-based CMOS devices, 27/04/2003, p.197-204Publication Edge effects and tilt dependency of heavy ion SEE characterization in pn junctions
Publication Effects of alloying on properties of NiSi for CMOS applications
Proceedings paper2004, Silicon Front-End Junction Formation - Physics and technology, 12/04/2004Publication Electrical properties of low-VT metal-gated n-MOSFETs using La2O3/SiOx as interfacial layer between HfLaO high-k dielectrics and Si channel
Journal article2008-05, IEEE Electron Device Letters, (29) 5, p.430-433Publication Flash memory with high-k tunnel dielectrics: comparative retention study
Proceedings paper2005, 1st International Conference on Memory Technology and Design, 21/05/2005, p.239-241Publication Flat-band voltage shift of Ruthenium gated stacks and its link with the formation of a thin Ruthenium oxide layer at the Ruthenium/dielectric interface
Journal article2007-02, Journal of Applied Physics, (101) 3, p.34503Publication Forming gas anneal induced flat-band voltage shift of metal-oxide-semiconductor stacks and its link with hydrogen incorporation in metal gates
Journal article2007, Microelectronic Engineering, (84) 9_10, p.2213-2216Publication High-k materials for tunnel barrier engineering in future memory technologies
Meeting abstract2004-10, Extended Abstracts 206th Electrochemical Society Meeting, 3/10/2004, p.868Publication Higk-k materials for tunnel barrier engineering in floating-gate flash memories
Meeting abstract2005, Meeting Abstracts 208th Electrochemical Society, 1/10/2005Publication Impact of advanced gate stack engineering on low frequency noise performances of planar bulk CMOS transistors
Proceedings paper2009, 20th International Conference on Noise and Fluctuations - ICNF, 14/06/2009, p.277-280Publication Low VT CMOS using doped Hf-based oxides, TaC-based metals and laser-only anneal
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.49-52Publication Low-frequency noise analysis of the impact of an LaO cap layer in HfSiON/Ta2C gate stack nMOSFETs
Proceedings paper2009, ULSI Process Integration 6, 4/10/2009, p.237-245Publication Low-frequency noise analysis of the impact of an LaO cap layer in HfSiON/Ta2C gate stack nMOSFETs
Meeting abstract2009, 216th ECS Meeting, 4/10/2009, p.2370Publication Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks
Journal article2007, Microelectronics Reliability, (47) 4_5, p.518-520Publication Ni- and Co-based silicides for advanced CMOS applications
Journal article2003, Microelectronic Engineering, (70) 2_4, p.158-165Publication Ni-based silicides: material issues for advanced CMOS applications
Proceedings paper2003, Advanced Short-Time Thermal Processing for Si-based CMOS devices, 27/04/2003, p.177-182